公开(公告)号：US20180006124A1

公开(公告)日：2018-01-04

申请号：US15628945

申请日：2017-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Hiroki KOMAGATA ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Shota SAMBONSUGE ,  Kazuya SUGIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7881

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US20210175361A1

公开(公告)日：2021-06-10

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takuya HANDA ,  Yasuharu HOSAKA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US20210125823A1

公开(公告)日：2021-04-29

申请号：US17257071

申请日：2019-06-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuki TANEMURA ,  Shota SAMBONSUGE ,  Naoki OKUNO

IPC: H01L21/02 ,  C23C14/34 ,  C23C14/08

Abstract: A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

公开(公告)号：US20230402280A1

公开(公告)日：2023-12-14

申请号：US18232881

申请日：2023-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuki TANEMURA ,  Shota SAMBONSUGE ,  Naoki OKUNO

IPC: H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L21/02266 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02172 ,  H01L21/02293

Abstract: A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

公开(公告)号：US20210119052A1

公开(公告)日：2021-04-22

申请号：US16759020

申请日：2018-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO ,  Naoki OKUNO

IPC: H01L29/786 ,  H01L29/22 ,  H01L27/108

Abstract: A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.

公开(公告)号：US20200266281A1

公开(公告)日：2020-08-20

申请号：US16755208

申请日：2018-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomoki HIRAMATSU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO

IPC: H01L29/51 ,  H01L21/8238

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.