Electronic sensor for nitric oxide
    1.
    发明授权
    Electronic sensor for nitric oxide 有权
    一氧化氮电子传感器

    公开(公告)号:US08623281B2

    公开(公告)日:2014-01-07

    申请号:US13139582

    申请日:2009-12-10

    IPC分类号: G01N27/00

    摘要: Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.

    摘要翻译: 公开了一种用于确定诸如呼出气体的流体中的NO浓度的半导体装置(1)。 器件(1)通常包括彼此分离的一对电极(18),以在有机半导体(14)中限定沟道区域(16),用于控制所述沟道区域的栅极结构(10)和接收层 (22)至少部分地与所述通道区域重叠,所述受体层包含卟吩或酞菁配位络合物,其包含用于络合NO的III-XII过渡金属离子或铅(Pb)离子。 这种半导体器件能够感测ppb范围内的NO浓度。

    ORGANIC FIELD-EFFECT TRANSISTOR FOR SENSING APPLICATIONS
    2.
    发明申请
    ORGANIC FIELD-EFFECT TRANSISTOR FOR SENSING APPLICATIONS 审中-公开
    用于传感应用的有机场效应晶体管

    公开(公告)号:US20090267057A1

    公开(公告)日:2009-10-29

    申请号:US12302045

    申请日:2007-05-10

    CPC分类号: G01N27/414 H01L51/0545

    摘要: Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

    摘要翻译: 场效应晶体管,包括栅电极层,第一介电层,源电极,漏电极,有机半导体和第二电介质层,其中第一介电层位于栅电极层上,源极, 漏电极和有机半导体位于第一电介质层的上方,源极和漏电极与有机半导体接触,其中第二介电层被放置在源电极,漏电极和有机半导体的组装上,其中 在场效应晶体管的操作期间,包括栅极电极层和第一介电层的组件的电容低于第二介电层的电容。 此外,公开了一种包括这种场效应晶体管的传感器系统和用于检测分子的传感器系统的使用。

    Fluid Analyser
    3.
    发明申请
    Fluid Analyser 审中-公开
    流体分析仪

    公开(公告)号:US20080300501A1

    公开(公告)日:2008-12-04

    申请号:US11995698

    申请日:2006-07-06

    IPC分类号: A61B5/08 H01L51/05

    CPC分类号: G01N27/4143 G01N33/497

    摘要: A gas analyser (12) comprises a transistor (1) that has a cavity (7) between its gate (2) and its organic semiconductor (6) based conducting channel. In operation a component from a gas sample introduced into the cavity (7) may absorb onto an exposed absorption sensitive surface portion of the organic semiconductor (6). A detector (13) detects a change in the threshold voltage of the transistor caused by the component absorbing on the exposed surface portion. In response to detecting this change, the detector generates a measurement signal indicative of a concentration of the component in the sample.

    摘要翻译: 气体分析器(12)包括在其栅极(2)和其基于有机半导体(6)的导电沟道之间具有空腔(7)的晶体管(1)。 在操作中,来自引入空腔(7)的气体样品的组分可以吸收到有机半导体(6)的暴露的吸收敏感表面部分上。 检测器(13)检测由在暴露表面部分上吸收的成分引起的晶体管的阈值电压的变化。 响应于检测到该变化,检测器产生指示样品中组分浓度的测量信号。

    ELECTRONIC SENSOR FOR NITRIC OXIDE
    4.
    发明申请
    ELECTRONIC SENSOR FOR NITRIC OXIDE 有权
    电子传感器用于氧化氮

    公开(公告)号:US20110239735A1

    公开(公告)日:2011-10-06

    申请号:US13139582

    申请日:2009-12-10

    IPC分类号: G01N33/497 H01L29/66

    摘要: Disclosed is a semiconductor device (1) for determining NO concentrations in fluids such as exhaled breath. The device (1) typically comprises a pair of electrodes (18) separated from each other to define a channel region (16) in an organic semiconductor (14), a gate structure (10) for controlling said channel region, and a receptor layer (22) at least partially overlapping said channel region, said receptor layer comprising a porphine or phtalocyanine coordination complex including a group III-XII transition metal ion or a lead (Pb) ion for complexing NO. Such a semiconductor device is capable of sensing NO concentrations in the ppb range.

    摘要翻译: 公开了一种用于确定诸如呼出气体的流体中的NO浓度的半导体装置(1)。 器件(1)通常包括彼此分离的一对电极(18),以在有机半导体(14)中限定沟道区域(16),用于控制所述沟道区域的栅极结构(10)和接收层 (22)至少部分地与所述通道区域重叠,所述受体层包含卟吩或酞菁配位络合物,其包含用于络合NO的III-XII过渡金属离子或铅(Pb)离子。 这种半导体器件能够感测ppb范围内的NO浓度。

    Integrated circuit provided with a substrate and memory transponder
    8.
    发明授权
    Integrated circuit provided with a substrate and memory transponder 失效
    集成电路配有基板和存储器应答器

    公开(公告)号:US06818920B2

    公开(公告)日:2004-11-16

    申请号:US09817107

    申请日:2001-03-26

    IPC分类号: H01L2358

    摘要: The integrated circuit (10) has a substrate and a memory with a first memory unit (30) containing organic material. The first memory unit (30) has a first (26) and a second electrode (28), which are in the non-programmed state electrically connected by an interconnection (27). On programming, the interconnection (27) is at least partially broken in that it is locally heated. This heating can be effected electrically and optically. By preference the first memory unit (30) is integrated in a first layer (6) of organic material, which also has a first electrode (25) of the integrated circuit (10). The integrated circuit (10) can be used in a transponder which is electrically programmable. In the method of programming, the local heating is effected electrically, by applying a voltage across the first memory unit (30).

    摘要翻译: 集成电路(10)具有衬底和具有含有有机材料的第一存储单元(30)的存储器。 第一存储器单元(30)具有通过互连(27)电连接的处于非编程状态的第一电极(26)和第二电极(28)。 在编程中,互连(27)至少部分地被断开,因为其被局部加热。 这种加热可以电和光学地进行。 优选地,第一存储器单元(30)集成在有机材料的第一层(6)中,其还具有集成电路(10)的第一电极(25)。 集成电路(10)可用于电可编程的应答器。 在编程方法中,通过在第一存储单元(30)上施加电压来实现局部加热。

    ORGANIC LIGHT EMITTING DEVICE
    9.
    发明申请
    ORGANIC LIGHT EMITTING DEVICE 有权
    有机发光装置

    公开(公告)号:US20130037787A1

    公开(公告)日:2013-02-14

    申请号:US13642000

    申请日:2011-04-21

    IPC分类号: H01L51/50 H01L51/40

    摘要: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode (102); a second electrode (105); an organic light emissive layer (104) arranged between said first electrode and said second electrode; and an organic charge transport layer (103) arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer (406) which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e. increased external quantum efficiency.

    摘要翻译: 本发明涉及至少包括:第一电极(102)的有机发光器件(OLED); 第二电极(105); 布置在所述第一电极和所述第二电极之间的有机发光层(104); 以及布置在所述第一电极和所述发射层之间的有机电荷传输层(103),其中i)所述电荷传输层在面向发光层的电荷输送层的表面上被图案化或设置有周期性表面结构,和/ 或ii)在所述电荷传输层和所述发射层之间提供允许电荷传输到发射层的取向层(406),所述取向层促进所述发光层的分子的光偶极子朝共同的优选方向 分子轴方向。 图案化或结构化电荷传输层和/或取向层的使用提供了从OLED层堆叠提供的改进的光输出耦合,即提高的外部量子效率。