摘要:
A method for producing a film of compound semiconductor includes providing a substrate and a compound bulk material having a first chemical composition that includes at least one first chemical element and a second chemical element. A film is deposited on the substrate using the compound bulk material as a single source of material. The deposited film has a composition substantially the same as the first chemical composition. A residual chemical reaction is induced in the deposited film using a source containing the second chemical element to thereby increase the content of the second chemical element in the deposited film so that the deposited film has a second chemical composition. The film may be employed in a photovoltaic device.
摘要:
A photovoltaic device includes a plurality of photovoltaic cells disposed in an array in which each cell is adjacent to another cell. Each of the cells includes first and second photovoltaic modules. The first photovoltaic module of each cell is configured to convert a first part of light energy incident thereon into electrical energy and to reflect to the second photovoltaic module of an adjacent cell at least some of a remaining portion of light energy incident thereon. The second photovoltaic module of each cell is configured to convert into electrical energy the remaining portion of the light energy received from the first photovoltaic module of an adjacent cell.
摘要:
A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.
摘要:
A method and apparatus of forming compositionally homogeneous particles is provided. The method includes forming a homogenous melt from a plurality of constituent materials under a first pressure sufficient to prevent substantial vaporization of the constituent materials. Droplets are generated from the homogenous melt. The droplets are cooled under a second pressure sufficient to prevent substantial vaporization of the constituent materials at least until the homogeneous particles formed therefrom have stabilized.
摘要:
A method and apparatus of forming compositionally homogeneous particles is provided. The method includes forming a homogenous melt from a plurality of constituent materials under a first pressure sufficient to prevent substantial vaporization of the constituent materials. Droplets are generated from the homogenous melt. The droplets are cooled under a second pressure sufficient to prevent substantial vaporization of the constituent materials at least until the homogeneous particles formed therefrom have stabilized.
摘要:
A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material.
摘要:
A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using a second deposition process different from the first deposition process. The first and second thin-film absorber layers are each photovoltaically active regions and the second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer.
摘要:
A hydro-thermal exchange unit (HTEU) for desalinating feed water in accordance with a humidification-dehumidification includes feed water, fresh water and gas conduit circuits for transporting feed water, fresh water, and gas, respectively. The unit also includes an evaporator through which a portion of the feed water conduit and the gas conduit pass. The evaporator causes evaporation of a portion of the feed water to produce vapor that is transported through the gas conduit. The unit also includes a condenser through which a portion of the gas conduit and the fresh water conduit pass. The condenser has input and output ports for coupling the gas and fresh water conduit circuits. The condenser extracts moisture from the vapor transported therethrough by the gas conduit. The extracted moisture is discharged through the fresh water conduit. The unit also includes a heat exchanger through which a portion of the fresh water conduit and the feed water conduit pass to thereby extract residual heat from the fresh water such that the residual heat heats the feed water.
摘要:
A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.
摘要:
A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material.