摘要:
A method of manufacturing a flash memory cell in which an ion implantation process is performed before a cleaning process for etching a protrusion of a trench insulating film to a nipple shape. As a result, the etch rate at a portion except for portions in which a moat will occur along the trench insulating film is increased. Therefore, generation of the moat in the trench insulating film can be prevented and spacing of the floating gate can be optimized.
摘要:
Disclosed herein is a method for forming an isolation film of a semiconductor memory device. According to the disclosure, in a pre-treatment cleaning process performed before a tunnel oxide film is formed, a SC-1 cleaning process is performed at a temperature ranging from 60° C. to 70° C. Therefore, oxide films in a cell region and a peripheral region are recessed even in the SC-1 cleaning process as well as a DHF cleaning process. A DHF cleaning time can be thus reduced. Accordingly, the method can minimize loss of a silicon substrate by DHF and can thus control the depth of a moat.
摘要:
Disclosed is a method of manufacturing a flash memory device. In a flash memory device using a SA-STI scheme, a trench for isolation is buried with oxide. A field oxide film is then formed by means of a polishing process. Next, field oxide films of a cell region and a low-voltage transistor region are selectively etched by a given thickness. As EFH values of the cell region, the low-voltage transistor region and the high-voltage transistor region become same or similar, it is possible to secure stability of a subsequent process.
摘要:
Provided relates to a method of a flash memory device, which performs a first rapid thermal oxidation process at a H2 rich atmosphere for recovering an etched damage during a gate forming process, and performs a second rapid thermal oxidation process at the H2 rich atmosphere for ion-activating after performing an ion implantation process for forming a cell transistor junction and a peripheral circuit transistor junction. As a result of those processes, a Si-dangling bond cut off during a gate etching process has a Si—H combination structure and the whole processing time is reduced, and thus an abnormal oxidation caused at an edge of an ONO layer and a tunnel oxide film, which can make it possible to prevent a smiling phenomena of the ONO layer and a bird's beak phenomena of the tunnel oxide film.
摘要:
Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.
摘要:
A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.
摘要:
Disclosed is a method of manufacturing the semiconductor devices. The method comprising the steps of forming a gate electrode on a semiconductor substrate, depositing an oxide film for a spacer on the gate electrode, implementing an anisotropic dry etch process for the oxide film for the spacer to form spacers at the sidewalls of the gate electrode, and implementing a rapid thermal annealing process for the spacers under an oxygen atmosphere in order to segregate hydrogen contained within the spacers toward the surface. Therefore, hydrogen contained within the spacer oxide film is not diffused into the tunnel oxide film and the film quality of the tunnel oxide film is thus improved. As a result, program or erase operation characteristics of the flash memory device and a retention characteristic of the flash memory device could be improved.
摘要:
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.
摘要:
The present invention discloses a method for forming an element isolation film of a semiconductor device, comprising the steps of: sequentially forming a pad oxide film, a pad nitride film and a mask oxide film on a semiconductor substrate on which a first region for forming a high voltage device and a second region for forming a low voltage device or a flash memory cell are defined; etching the mask oxide film, the pad nitride film and the pad oxide film in the first region and the mask oxide film in the second region, and forming an oxide film for the high voltage device in the first region; removing the residual pad nitride film in the second region; removing the nitride film and partially removing the oxide film for the high voltage device in the first region, wherein the oxide film for the high voltage device has a third thickness; removing the residual pad oxide film in the second region; partially removing the oxide film for the high voltage device in the first region according to a cleaning process, wherein the oxide film for the high voltage device has a third thickness; and forming a tunnel oxide film over the resulting structure, wherein a gate oxide film for a high voltage device including the oxide film for the high voltage device and the tunnel oxide film is formed in the first region, and the tunnel oxide film for the low voltage device and cell is formed in the second region.
摘要:
The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.