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    MEMS ELECTROCHEMICAL GAS SENSOR
    1.
    发明申请
    MEMS ELECTROCHEMICAL GAS SENSOR 有权
    MEMS电化学气体传感器

    公开(公告)号：US20130075255A1

    公开(公告)日：2013-03-28

    申请号：US13620546

    申请日：2012-09-14

    申请人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： G01N27/407

    CPC分类号： G01N27/18 ,  G01N33/004

    摘要： Disclosed is an electrochemical gas sensor using micro electro mechanical systems (MEMS). The MEMS electrochemical gas sensor includes: a substrate a lower central region of which is etched by a predetermined thickness; a first insulation film formed on the substrate; a heat emitting resistance body formed on the first insulation film; a second insulation film formed on the heat emitting resistance body; a reference electrode formed in an upper central region of the second insulation film; a solid electrolyte formed on the reference electrode; and a detection electrode formed on the solid electrolyte.

    摘要翻译： 公开了一种使用微机电系统（MEMS）的电化学气体传感器。 MEMS电化学气体传感器包括：其下部中心区域被预定厚度蚀刻的衬底; 形成在所述基板上的第一绝缘膜; 形成在第一绝缘膜上的发热电阻体; 形成在所述发热电阻体上的第二绝缘膜; 参考电极，其形成在所述第二绝缘膜的上中央区域中; 形成在参比电极上的固体电解质; 和形成在固体电解质上的检测电极。

    Microelectromechanical systems type semiconductor gas sensor using microheater having many holes and method for manufacturing the same
    2.
    发明授权
    Microelectromechanical systems type semiconductor gas sensor using microheater having many holes and method for manufacturing the same 有权
    微机电系统使用具有许多孔的微加热器的半导体气体传感器及其制造方法

    公开(公告)号：US08683847B2

    公开(公告)日：2014-04-01

    申请号：US13345772

    申请日：2012-01-09

    申请人： Seung Eon Moon ,  Jae Woo Lee ,  Nak Jin Choi ,  Hyung Kun Lee ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Jae Woo Lee ,  Nak Jin Choi ,  Hyung Kun Lee ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： H01L21/02 ,  G01N7/04

    CPC分类号： G01N27/128 ,  G01N27/123

    摘要： Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.

    摘要翻译： 公开了使用具有许多孔的微加热器的MEMS型半导体气体传感器及其制造方法。 MEMS型半导体气体传感器包括：以预定厚度蚀刻中心区域的基板; 第二膜，形成在所述基板的中心区域的上部并具有许多孔; 形成在第二膜上并具有许多孔的发热电阻器; 形成在包括所述发热电阻器并具有许多孔的所述第二膜上的第一膜; 形成在第一膜上并具有许多孔的感测电极; 以及感测材料，形成在感测电极上。

    MEMS electrochemical gas sensor
    3.
    发明授权
    MEMS electrochemical gas sensor 有权
    MEMS电化学气体传感器

    公开(公告)号：US09494543B2

    公开(公告)日：2016-11-15

    申请号：US13620546

    申请日：2012-09-14

    申请人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Nak Jin Choi ,  Hyung Kun Lee ,  Jae Woo Lee ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： G01N27/407 ,  G01N27/18 ,  G01N33/00

    CPC分类号： G01N27/18 ,  G01N33/004

    摘要： Disclosed is an electrochemical gas sensor using micro electro mechanical systems (MEMS). The MEMS electrochemical gas sensor includes: a substrate a lower central region of which is etched by a predetermined thickness; a first insulation film formed on the substrate; a heat emitting resistance body formed on the first insulation film; a second insulation film formed on the heat emitting resistance body; a reference electrode formed in an upper central region of the second insulation film; a solid electrolyte formed on the reference electrode; and a detection electrode formed on the solid electrolyte.

    摘要翻译： 公开了一种使用微机电系统（MEMS）的电化学气体传感器。 MEMS电化学气体传感器包括：其下部中心区域被预定厚度蚀刻的衬底; 形成在所述基板上的第一绝缘膜; 形成在第一绝缘膜上的发热电阻体; 形成在所述发热电阻体上的第二绝缘膜; 参考电极，其形成在所述第二绝缘膜的上中央区域中; 形成在参比电极上的固体电解质; 和形成在固体电解质上的检测电极。

    METHOD OF FABRICATING NANO-WIRE ARRAY
    4.
    发明申请
    METHOD OF FABRICATING NANO-WIRE ARRAY 失效
    制作纳米线阵列的方法

    公开(公告)号：US20080233675A1

    公开(公告)日：2008-09-25

    申请号：US11927881

    申请日：2007-10-30

    申请人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    发明人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0673 ,  H01L21/76289 ,  H01L27/1225 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  Y10S977/762

    摘要： Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译： 提供一种制造纳米线阵列的方法，包括以下步骤：在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域，然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线，其间插入图案化的纳米线; 形成多个漏电极，所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个，并且形成多个源电极，所述多个源电极的一端连接到所述源电极线并接触所述纳米线， 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域，以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此，即使在纳米线与电极线的不平行结构中，大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION
    5.
    发明申请
    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION 审中-公开
    具有低功耗的半导体气体传感器

    公开(公告)号：US20110138882A1

    公开(公告)日：2011-06-16

    申请号：US12965433

    申请日：2010-12-10

    申请人： Seung Eon Moon ,  Jong Hyurk Park ,  Jae Woo Lee ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Jong Hyurk Park ,  Jae Woo Lee ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： G01N33/00 ,  H01L21/368 ,  B82Y15/00

    CPC分类号： G01N27/12

    摘要： Provided are a structure and operating method of a semiconductor gas sensor having low power consumption. The semiconductor gas sensor is adapted to adsorb gas to a low-dimensional semiconductor nanomaterial at room temperature, output a change in resistance of the low-dimensional semiconductor nanomaterial, apply power to a heater, desorb the gas adsorbed to the low-dimensional semiconductor nanomaterial, and return the resistance of the low-dimensional semiconductor nanomaterial back to initial resistance. The semiconductor gas sensor senses the gas at room temperature using the low-dimensional semiconductor nanomaterial having a high-sensitivity characteristic at room temperature, and drives the heater only when the adsorbed gas is desorbed. Thereby, it is possible to improve a gas sensing characteristic, reduce power consumption, and provide a rapid response speed.

    摘要翻译： 提供具有低功耗的半导体气体传感器的结构和操作方法。 半导体气体传感器适于在室温下将气体吸附到低维半导体纳米材料上，输出低维半导体纳米材料的电阻变化，向加热器施加电力，解吸吸附在低维半导体纳米材料上的气体 ，并将低维半导体纳米材料的电阻恢复到初始电阻。 半导体气体传感器使用在室温下具有高灵敏度特性的低维半导体纳米材料在室温下感测气体，仅在吸附气体解吸时驱动加热器。 由此，能够提高气体感测特性，降低功耗，提供快速的响应速度。

    Method of fabricating nano-wire array
    6.
    发明授权
    Method of fabricating nano-wire array 失效
    制造纳米线阵列的方法

    公开(公告)号：US07846786B2

    公开(公告)日：2010-12-07

    申请号：US11927881

    申请日：2007-10-30

    申请人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    发明人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/06 ,  H01L27/088

    CPC分类号： H01L29/0673 ,  H01L21/76289 ,  H01L27/1225 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  Y10S977/762

    摘要： Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译： 提供一种制造纳米线阵列的方法，包括以下步骤：在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域，然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线，其间插入图案化的纳米线; 形成多个漏电极，所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个，并且形成多个源电极，所述多个源电极的一端连接到所述源电极线并接触所述纳米线， 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域，以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此，即使在纳米线与电极线的不平行结构中，大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

    Acoustic sensor and fabrication method thereof
    7.
    发明授权
    Acoustic sensor and fabrication method thereof 有权
    声传感器及其制造方法

    公开(公告)号：US09066184B2

    公开(公告)日：2015-06-23

    申请号：US13557108

    申请日：2012-07-24

    申请人： Jae Woo Lee ,  Chang Han Je ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Jae Woo Lee ,  Chang Han Je ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： H04R31/00 ,  H04R19/00 ,  H04R19/04

    CPC分类号： H04R19/005 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H04R19/04 ,  H04R31/00 ,  Y10T29/49005 ,  H01L2924/00014

    摘要： A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.

    摘要翻译： 根据本公开的示例性实施例的用于制造声学传感器的方法包括：通过在基板的上部形成下电极来形成声传感器单元，在下电极上形成蚀刻孔，在其上形成牺牲层 下部电极的上部，并且将隔膜连接到牺牲层的上部; 将声学传感器单元的基板的下部耦合到其上形成有声压输入孔的印刷电路板，以便通过声压输入孔将声学传感器单元的基板的下部暴露于外部 ; 将覆盖所述声学传感器单元的盖附着在所述印刷电路板上; 蚀刻声学传感器单元的基板以形成声学室; 并去除牺牲层。

    APPARATUS FOR GENERATING DIRECTIONAL SOUND AND MOBILE TERMINAL USING THE SAME
    9.
    发明申请
    APPARATUS FOR GENERATING DIRECTIONAL SOUND AND MOBILE TERMINAL USING THE SAME 审中-公开
    用于产生方向声和移动终端的装置

    公开(公告)号：US20090154736A1

    公开(公告)日：2009-06-18

    申请号：US12240128

    申请日：2008-09-29

    申请人： Sung Q Lee ,  Jae Woo Lee ,  Hye Jin Kim ,  Sang Kyun Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Sung Q Lee ,  Jae Woo Lee ,  Hye Jin Kim ,  Sang Kyun Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H04R5/02

    CPC分类号： H04R1/323 ,  H04R3/12 ,  H04R2201/403 ,  H04R2499/11

    摘要： Provided are an apparatus for generating directional sound and a mobile terminal using the apparatus. The apparatus includes a signal controller for dividing and generating a reference signal into signals having three or more levels and phases, a first signal processor and a second signal processor for controlling a first signal and a second signal having levels and phases canceling each other among the signals generated from the signal controller, a central signal processor for controlling a signal having the same level and phase as the reference signal among the signals generated from the signal controller, a first speaker array and a second speaker array for converting signals output from the first signal processor and the second signal processor into sound signals and outputting the sound signals, and a central speaker for converting a signal output from the central signal processor into a sound signal and outputting the sound signal, and arranged between the first speaker array and the second speaker array.

    摘要翻译： 提供了一种用于产生定向声音的装置和使用该装置的移动终端。 该装置包括信号控制器，用于将参考信号分成并产生具有三个或多个电平和相位的信号;第一信号处理器和第二信号处理器，用于控制第一信号;以及第二信号， 从信号控制器产生的信号，用于控制与信号控制器产生的信号中具有与基准信号相同的电平和相位的信号的中央信号处理器，第一扬声器阵列和第二扬声器阵列，用于转换从第一 信号处理器和第二信号处理器转换成声音信号并输出​​声音信号;以及中央扬声器，用于将从中央信号处理器输出的信号转换为声音信号并输出​​声音信号，并且布置在第一扬声器阵列与第二扬声器阵列之间 扬声器阵列。