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    Differential/dual CPP recording head
    2.
    发明申请
    Differential/dual CPP recording head 失效
    差分/双CPP记录头

    公开(公告)号：US20060002032A1

    公开(公告)日：2006-01-05

    申请号：US10880879

    申请日：2004-06-30

    申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

    发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/265 ,  G11B5/127 ,  G11B5/3954 ,  G11B5/3974

    摘要： A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.

    摘要翻译： 一种用于从磁性介质读取信息的磁传感器。 磁传感器包括底电极和设置在底电极上方的第一传感器。 磁传感器还包括设置在第一传感器上方的中间电极，设置在中间电极上方的第二传感器和设置在第二传感器上方的顶部电极。 底部电极，中间电极和顶部电极用于并联地电连接第一传感器和第二传感器。

    Differential/dual CPP recording head
    3.
    发明授权
    Differential/dual CPP recording head 失效
    差分/双CPP记录头

    公开(公告)号：US07436632B2

    公开(公告)日：2008-10-14

    申请号：US10880879

    申请日：2004-06-30

    申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

    发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

    IPC分类号： G11B5/39

    CPC分类号： G11B5/265 ,  G11B5/127 ,  G11B5/3954 ,  G11B5/3974

    摘要： A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.

    摘要翻译： 一种用于从磁性介质读取信息的磁传感器。 磁传感器包括底电极和设置在底电极上方的第一传感器。 磁传感器还包括设置在第一传感器上方的中间电极，设置在中间电极上方的第二传感器和设置在第二传感器上方的顶部电极。 底部电极，中间电极和顶部电极用于并联地电连接第一传感器和第二传感器。

    Magnetic sensor that combines both CPP and CIP modes of operation
    4.
    发明授权
    Magnetic sensor that combines both CPP and CIP modes of operation 有权
    结合CPP和CIP操作模式的磁传感器

    公开(公告)号：US07359161B2

    公开(公告)日：2008-04-15

    申请号：US10880705

    申请日：2004-06-30

    申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael R. Montemorra ,  Patrick Ryan

    发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael R. Montemorra ,  Patrick Ryan

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B2005/0005

    摘要： A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.

    摘要翻译： 提供磁传感器。 磁传感器包括具有第一电阻区域和第二电阻区域的磁阻多层部分。 至少两个触点耦合到磁阻多层部分。 感测电流从至少两个触点的第一触点经由第一电阻区域和磁阻多层部分的第二电阻区域流过至少两个触点的第二触点。 所述第一阻抗区域促进所述感测电流在与所述磁阻多层部分的所述层的表面平行的第一方向上的主要流动，并且所述第二电阻区域基本上促进所述感测电流在第二方向上的初级流动 平行于磁阻多层部分的层的表面平面。

    Magnetic sensor that combines both CPP and CIP modes of operation
    5.
    发明申请
    Magnetic sensor that combines both CPP and CIP modes of operation 有权
    结合CPP和CIP操作模式的磁传感器

    公开(公告)号：US20060002034A1

    公开(公告)日：2006-01-05

    申请号：US10880705

    申请日：2004-06-30

    申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael Montemorra ,  Patrick Ryan

    发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael Montemorra ,  Patrick Ryan

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3903 ,  G11B2005/0005

    摘要： A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.

    摘要翻译： 提供磁传感器。 磁传感器包括具有第一电阻区域和第二电阻区域的磁阻多层部分。 至少两个触点耦合到磁阻多层部分。 感测电流从至少两个触点的第一触点经由第一电阻区域和磁阻多层部分的第二电阻区域流过至少两个触点的第二触点。 所述第一阻抗区域促进所述感测电流在与所述磁阻多层部分的所述层的表面平行的第一方向上的主要流动，并且所述第二电阻区域基本上促进所述感测电流在第二方向上的初级流动 平行于磁阻多层部分的层的表面平面。

    Non-Volatile Memory Cell with Ferroelectric Layer Configurations
    8.
    发明申请
    Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
    具有铁电层配置的非易失性存储单元

    公开(公告)号：US20100135061A1

    公开(公告)日：2010-06-03

    申请号：US12326714

    申请日：2008-12-02

    申请人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    发明人： Shaoping Li ,  Kaizhong Gao ,  Insik Jin ,  Song Xue ,  Haiwen Xi ,  Zheng Gao ,  Eileen Yan

    IPC分类号： G11C11/22 ,  H01L29/68

    CPC分类号： G11C11/22 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147

    摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.

    摘要翻译： 在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。 铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。 在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。 在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。 还提供了包括这种存储单元的非易失性存储器阵列。