TFT substrates and the manufacturing method thereof
    3.
    发明授权
    TFT substrates and the manufacturing method thereof 有权
    TFT基板及其制造方法

    公开(公告)号:US09564458B2

    公开(公告)日:2017-02-07

    申请号:US14433630

    申请日:2014-12-09

    Abstract: A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate; forming a first insulation layer and an active layer on the gate electrode in turn; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulation layer on the source electrode and the drain electrode; and forming a pixel electrode on the second insulation layer. The pixel electrode is electrically connected to the source electrode or the drain electrode via the second insulation layer. In this way, the masking effect of the display panel assembled by the TFT substrate can be ensured. In addition, the coupling capacitance between the data line and the scanning line may be reduced.

    Abstract translation: 公开了TFT基板及其制造方法。 该方法包括:提供衬底; 在所述基板上形成栅电极; 依次在栅电极上形成第一绝缘层和有源层; 在有源层上形成第一个黑矩阵; 在第一黑矩阵上形成源电极和漏电极; 在源电极和漏电极上形成第二绝缘层; 以及在所述第二绝缘层上形成像素电极。 像素电极经由第二绝缘层与源电极或漏电极电连接。 以这种方式,可以确保由TFT基板组装的显示面板的掩蔽效果。 此外,数据线和扫描线之间的耦合电容可能会降低。

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