摘要:
In a memory liquid crystal display device, a potential of a storage capacitor line signal (CS) supplied to the CS lines (CSL(i)) are once decreased (ΔVcs) while the gate lines (GL(i)) are made simultaneously active (period t4, period t10) in the data holding period (T2), and the potential of the storage capacitor line signal (CS) is made back to its original potential while the gate lines (GL(i)) are made simultaneously inactive and the refresh output control lines (RC(i)) are made active (period t5, period t11). This reduces flicker, thereby allowing for improvement in display quality of the memory liquid crystal display device.
摘要:
A shift register is disclosed which includes, at respective stages, unit circuits (11) each including (i) a flip-flop (11a) including first and second CMOS circuits and (ii) a signal generation circuit (11b) for generating an output signal (SROUTk) for the current stage with use of an output (Q, QB) of the flip-flop (11a), the shift register including a floating control circuit (11c) between a gate terminal of an output transistor (Tr7) of the signal generation circuit (11b) and a Q terminal. This makes it possible to reduce a circuit scale of a display driving circuit without causing a shift register to malfunction.
摘要:
A shift register is disclosed which includes, at respective stages, unit circuits (11) each including (i) a flip-flop (11a) including first and second CMOS circuits and (ii) a signal generation circuit (11b) for generating an output signal (SROUTk) for the current stage with use of an output (Q, QB) of the flip-flop (11a), the shift register including a floating control circuit (11c) between a gate terminal of an output transistor (Tr7) of the signal generation circuit (11b) and a Q terminal. This makes it possible to reduce a circuit scale of a display driving circuit without causing a shift register to malfunction.
摘要:
A flip-flop circuit (11a) includes: an input transistor (Tr19) having a gate terminal thereof connected to an SB terminal, a source terminal thereof connected to an RB terminal, and a drain terminal thereof connected to a first CMOS circuit and a second CMOS circuit; a power supply (VSS) which is connected to the first CMOS circuit or the second CMOS circuit and, when an SB signal is turned to be active, is connected to the RB terminal; and a regulator circuit (RC). With the arrangement, a compact flip-flop and a compact shift register employing the flip-flop are provided, without causing malfunction of the flip-flop and the shift register.
摘要:
A retention circuit (22) corresponding to each stage of a shift register is configured such that, when SROUT(k−1) is active, an input terminal of an inverter (INV1) and an output terminal of an inverter (INV2) are electrically connected to each other and an output terminal of the inverter (INV1) and an input terminal of the inverter (INV2) are connected to each other. This makes it possible to reduce a circuit scale of a display driving circuit without causing any malfunction of the display driving circuit.
摘要:
A flip-flop circuit (11a) includes: an input transistor (Tr19) having a gate terminal thereof connected to an SB terminal, a source terminal thereof connected to an RB terminal, and a drain terminal thereof connected to a first CMOS circuit and a second CMOS circuit; a power supply (VSS) which is connected to the first CMOS circuit or the second CMOS circuit and, when an SB signal is turned to be active, is connected to the RB terminal; and a regulator circuit (RC). With the arrangement, a compact flip-flop and a compact shift register employing the flip-flop are provided, without causing malfunction of the flip-flop and the shift register.
摘要:
In a memory liquid crystal display device, a potential of a storage capacitor line signal (CS) supplied to the CS lines (CSL(i)) are once decreased (ΔVcs) while the gate lines (GL(i)) are made simultaneously active (period t4, period t10) in the data holding period (T2), and the potential of the storage capacitor line signal (CS) is made back to its original potential while the gate lines (GL(i)) are made simultaneously inactive and the refresh output control lines (RC(i)) are made active (period t5, period t11). This reduces flicker, thereby allowing for improvement in display quality of the memory liquid crystal display device.
摘要:
This display device has a demultiplexer (501) formed on a liquid crystal panel, the demultiplexer including three switching elements SW1 to SW3 for time-division drive, which are connected to video signal lines SL1 to SL3. Here, the number of switching control signal lines for transmitting switching control signals GS1 to GS6 to be provided to switching elements coupled to the video signal lines is six, which is twice the number of time divisions, and switching control signals (e.g., GS1 and GS4) with the same timing are individually transmitted by two switching control signal lines, so that the number of switching elements to be coupled to the switching control signal lines as loads can be halved, resulting in reduced waveform rounding of the control signals.
摘要:
This display device has a demultiplexer (501) formed on a liquid crystal panel, the demultiplexer including three switching elements SW1 to SW3 for time-division drive, which are connected to video signal lines SL1 to SL3. Here, the number of switching control signal lines for transmitting switching control signals GS1 to GS6 to be provided to switching elements coupled to the video signal lines is six, which is twice the number of time divisions, and switching control signals (e.g., GS1 and GS4) with the same timing are individually transmitted by two switching control signal lines, so that the number of switching elements to be coupled to the switching control signal lines as loads can be halved, resulting in reduced waveform rounding of the control signals.
摘要:
A memory-type liquid crystal display device includes transistors (N1, N2), retention electrodes (MRY), refresh output control sections (RS1), and capacitors (Cb1). In a data retention period, an electric potential of each of the retention electrodes (MRY) is changed via a corresponding one of the capacitors (Cb1) by changing an electric potential level of a retention capacitor wire signal that is supplied to a corresponding CS line (CSL(i)). Each of the refresh output control sections (RS1) receives the electric potential thus changed of a corresponding one of the retention electrodes (MRY) via the input section and controls an electric potential of a corresponding pixel electrode (PIX) in accordance with the electric potential thus changed.