公开(公告)号：US20090072239A1

公开(公告)日：2009-03-19

申请号：US11579863

申请日：2005-05-11

申请人： Shigeo Oohira ,  Yasushi Nanishi ,  Tsutomu Araki ,  Tomohiro Yamaguchi

发明人： Shigeo Oohira ,  Yasushi Nanishi ,  Tsutomu Araki ,  Tomohiro Yamaguchi

IPC分类号： H01L29/205

CPC分类号： H01L21/02658 ,  B82Y10/00 ,  B82Y30/00 ,  C30B23/02 ,  C30B29/16 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02631

摘要： Provided are: a gallium oxide single crystal composite, which can provide, for example, upon a crystal growth of a nitride semiconductor, a high-quality cubic crystal in which mixing of a hexagonal crystal is reduced to thereby realize dominant growth of a cubic crystal over hexagonal crystal, and which can be utilized as a substrate particularly suitable for epitaxial growth of cubic GaN; a process for producing the same; and a process for producing a nitride semiconductor film. The gallium oxide single crystal composite has a gallium nitride layer formed of cubic gallium nitride on a surface of the gallium oxide single crystal; the process for producing the gallium oxide single crystal composite includes subjecting the surface of gallium oxide single crystal to nitriding treatment using ECR plasma or RF plasma to form the gallium nitride layer formed of cubic gallium nitride on the surface of the gallium oxide single crystal; and further, the process for producing the nitride semiconductor film includes growing the nitride semiconductor film on the surface of the gallium oxide single crystal composite by an RF-MBE method.

摘要翻译： 提供了：可以提供例如氮化物半导体的晶体生长的氧化镓单晶复合体，减少六方晶的混合从而实现立方晶体的主要生长的高品质立方晶体 可以用作特别适用于立方氮化镓的外延生长的基板; 其制造方法; 以及氮化物半导体膜的制造方法。 氧化镓单晶复合体在氧化镓单晶的表面上具有由立方氮化镓形成的氮化镓层; 制造氧化镓单晶复合体的方法包括：使用ECR等离子体或RF等离子体对氧化镓单晶的表面进行氮化处理，以在氧化镓单晶的表面上形成由立方氮化镓形成的氮化镓层; 此外，氮化物半导体膜的制造方法包括通过RF-MBE法在氮化镓单晶复合体的表面上生长氮化物半导体膜。

公开(公告)号：US06458614B1

公开(公告)日：2002-10-01

申请号：US09272703

申请日：1999-03-19

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L2100

CPC分类号： H01L31/1035 ,  H01L27/1443 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/32341

摘要： An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.

摘要翻译： 光电子集成电路包括：硅衬底; 形成在硅衬底中并处理电信号的电子电路; 形成在所述硅衬底的至少一部分上的ZnO膜; 以及电连接到电子电路的光电路。 光电路包括设置在ZnO膜上的至少一个GaN基半导体化合物层，GaN基化合物半导体层接收或发射光信号。

公开(公告)号：US6146916A

公开(公告)日：2000-11-14

申请号：US201924

申请日：1998-12-01

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L21/203 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631

摘要： A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.

摘要翻译： 一种形成GaN基半导体层的方法包括以下步骤：在玻璃基板和硅基板之一上形成ZnO缓冲层; 并通过使用电子回旋共振分子束外延（ECR-MBE）方法在ZnO缓冲层上外延生长GaN基半导体层。

公开(公告)号：US06593596B1

公开(公告)日：2003-07-15

申请号：US09396822

申请日：1999-09-14

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L3300

CPC分类号： H01L33/007

摘要： A semiconductor light emitting device includes: a substrate; a ZnO buffer layer formed on the substrate; and a GaN-based light emitting layer formed on the ZnO buffer layer. The ZnO buffer layer has an average crystalline grain size of ZnO grains of about 0.45 &mgr;m or more, or 0.12 &mgr;m or less.

摘要翻译： 一种半导体发光器件，包括：衬底; 形成在所述基板上的ZnO缓冲层; 以及形成在ZnO缓冲层上的GaN系发光层。 ZnO缓冲层具有约0.45μm以上或0.12μm以下的ZnO粒子的平均结晶粒径。

公开(公告)号：US06362496B1

公开(公告)日：2002-03-26

申请号：US09585220

申请日：2000-06-01

申请人： Yasushi Nanishi ,  Michio Kadota

发明人： Yasushi Nanishi ,  Michio Kadota

IPC分类号： H01L3300

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631

摘要： A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance-molecular beam-epitaxy (ECR-MBE) method.

摘要翻译： 一种形成GaN基半导体层的方法包括以下步骤：在玻璃基板和硅基板之一上形成ZnO缓冲层; 并通过使用电子回旋共振分子束外延（ECR-MBE）方法在ZnO缓冲层上外延生长GaN基半导体层。

公开(公告)号：US4528061A

公开(公告)日：1985-07-09

申请号：US485355

申请日：1983-04-15

申请人： Shintaro Miyazawa ,  Yasushi Nanishi ,  Kohji Tada ,  Akihisa Kawasaki ,  Toshihiro Kotani

发明人： Shintaro Miyazawa ,  Yasushi Nanishi ,  Kohji Tada ,  Akihisa Kawasaki ,  Toshihiro Kotani

IPC分类号： C30B27/02 ,  C30B29/42 ,  H01L21/18 ,  H01L21/208 ,  C30B15/04

CPC分类号： C30B27/02 ,  C30B29/42

摘要： A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B.sub.2 O.sub.3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B.sub.2 O.sub.3, and pulling up single crystals from the mixture melts in accordance with the LEC method.

摘要翻译： 一种硼掺杂GaAs单晶的制造方法，其包括制备由液体B 2 O 3密封剂覆盖的硼，镓和砷的混合物，熔融混合物，从混合物中拉出掺杂硼的GaAs晶体根据LEC方法熔融， 从中除去种子末端后，将这些晶体粉碎成小块，在B2O3存在下重熔这些晶片，并从混合物中拉出单晶，按照LEC方法熔化。