公开(公告)号：US07323725B2

公开(公告)日：2008-01-29

申请号：US10962492

申请日：2004-10-13

申请人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki

发明人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki

IPC分类号： H01L29/739 ,  H01L31/00

CPC分类号： B82Y10/00 ,  H01L29/0817 ,  H01L29/127 ,  H01L29/7371

摘要： The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.

摘要翻译： 本发明涉及一种具有多层结构的半导体器件，该多层结构包括依次由III-V族n型化合物半导体构成的发射极层，基极层和集电极层; 设置在发射极层和基极层之间的量子点势垒层; 集电极，基极和发射极层全部连接到发射极; 所述量子点势垒层分别具有从所述发射极层侧和所述基极侧侧夹在第一和第二阻挡层之间的多个量子点，并且各自具有与所述基极层相对的部分。 第二阻挡层中的基底层侧界面，基底层中的集电极层侧发射极侧接合具有对应于量子点的凸部的集电极层的曲率的曲率。

公开(公告)号：US20060231862A1

公开(公告)日：2006-10-19

申请号：US10542063

申请日：2004-04-14

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L31/00

CPC分类号： H01L29/7371 ,  H01L29/2003 ,  H01L29/7376

摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

摘要翻译： 本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103） 在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层 （307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

公开(公告)号：US20050067615A1

公开(公告)日：2005-03-31

申请号：US10962492

申请日：2004-10-13

申请人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki

发明人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki

IPC分类号： H01L29/68 ,  H01L29/06 ,  H01L29/08 ,  H01L29/12 ,  H01L29/737 ,  H01L31/0328

CPC分类号： B82Y10/00 ,  H01L29/0817 ,  H01L29/127 ,  H01L29/7371

摘要： The present invention relates to a semiconductor device comprising a substrate (101); a semiconductor multi-layered structure formed on the substrate (101); the semiconductor multi-layered structure comprising an emitter layer (102), a base layer (105), and a collector layer (107), each composed of a group III-V n-type compound semiconductor and layered in this order; a quantum dot barrier layer (103) disposed between the emitter layer (102) and the base layer (105); a collector electrode (110), a base electrode (111) and an emitter electrode (112) connected to the collector layer (107), the base layer (105) and the emitter layer (102), respectively; the quantum dot barrier layer (103) comprising a plurality of quantum dots (103c); the quantum dots (103) being sandwiched between first and second barrier layers (103a, 103d) from the emitter layer side and the base layer side, respectively; each of the quantum dots (103c) having a convex portion that is convex to the base layer (105); a base layer (105) side interface (d1) in the second barrier layer (103d), and collector layer side and emitter layer side interfaces (d2, d3) in the base layer (105); the interfaces having curvatures (d12, d22, d23) that are convex to the collector layer (107) corresponding to the convex portions of the quantum dots (103c).

摘要翻译： 本发明涉及一种包括衬底（101）的半导体器件; 形成在所述基板（101）上的半导体多层结构; 所述半导体多层结构包括由III-V族N型化合物半导体构成的发射极层（102），基极层（105）和集电极层（107），并且按顺序层叠; 设置在发射极层（102）和基极层（105）之间的量子点势垒层（103）; 分别与集电极层（107）连接的集电极（110），基极（111）和发射极（112），基极层（105）和发射极层（102） 所述量子点势垒层（103）包括多个量子点（103c）; 量子点（103）分别从发射极侧和基极侧夹在第一和第二阻挡层（103a，103d）之间; 每个量子点（103c）具有与基底层（105）凸起的凸部; 第二阻挡层（103d）中的基底层（105）侧界面（d1），以及基底层（105）中的集电极层侧和发射极层侧界面（d2，d3） 具有对应于量子点（103c）的凸部的与集电体层（107）凸起的曲率（d12，d22，d23）的界面。

公开(公告)号：US07414261B2

公开(公告)日：2008-08-19

申请号：US10542063

申请日：2004-04-14

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L29/06

CPC分类号： H01L29/7371 ,  H01L29/2003 ,  H01L29/7376

摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

摘要翻译： 本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103） 在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层 （307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

公开(公告)号：US06953954B2

公开(公告)日：2005-10-11

申请号：US10745567

申请日：2003-12-29

申请人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

发明人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/80 ,  H01L29/43

CPC分类号： H01L29/1029 ,  H01L29/2003 ,  H01L29/7785

摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.

摘要翻译： 本发明的等离子体振荡切换装置包括半导体基板101， 第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a， 通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚 在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。

公开(公告)号：US06861679B2

公开(公告)日：2005-03-01

申请号：US10817035

申请日：2004-04-05

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L29/812 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L31/0328

CPC分类号： H01L29/7785 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462 ,  H01L29/7784

摘要： A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaxIn1−xNyA1−y in which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.

摘要翻译： 根据本发明的异质场效应晶体管包括InP衬底，设置在InP衬底上的沟道层，其中缓冲层设置在InP衬底和沟道层之间，间隔层由具有大于 形成为与沟道层异质连接的沟道层的沟道层和与间隔层相邻形成的载流子供给层，其中沟道层包括由式GaxIn1-xNyA1表示的化合物半导体构成的预定半导体层 -Y，其中A为As或Sb，组成x满足0 <= x <= 0.2，组成y满足0.03 <= Y＆LE; 0.10。

公开(公告)号：US08410693B2

公开(公告)日：2013-04-02

申请号：US13321620

申请日：2011-02-01

申请人： Koichi Mizuno ,  Shinichiro Hori ,  Eishiro Otani

发明人： Koichi Mizuno ,  Shinichiro Hori ,  Eishiro Otani

IPC分类号： H01J17/49

CPC分类号： H01J11/12 ,  H01J11/24 ,  H01J2211/245 ,  H01J2211/323

摘要： A plasma display panel includes a rear plate and a front plate arranged as opposed to the rear plate. The rear plate has a vertical barrier rib and a horizontal barrier rib orthogonal to the vertical barrier rib. The front plate has a first transparent electrode in parallel with the horizontal barrier rib and a plurality of second transparent electrodes in parallel with the vertical barrier rib. The front plate further has a plurality of bus electrodes having the same width and arranged with the same interval. The plurality of bus electrodes includes a first bus electrode electrically connected with the first transparent electrode, and a second bus electrode electrically connected with the plurality of second transparent electrodes. The second bus electrode is formed in a position opposed to the horizontal barrier rib.

摘要翻译： 等离子体显示面板包括后板和与后板相对布置的前板。 后板具有与垂直隔板正交的垂直隔壁和水平隔板。 前板具有与水平障壁平行的第一透明电极和与垂直隔板平行的多个第二透明电极。 前板还具有多个具有相同宽度的总线电极并以相同的间隔布置。 多个总线电极包括与第一透明电极电连接的第一总线电极和与多个第二透明电极电连接的第二总线电极。 第二总线电极形成在与水平障壁相对的位置。

公开(公告)号：US20120176030A1

公开(公告)日：2012-07-12

申请号：US13395023

申请日：2011-01-27

申请人： Shinichiro Hori ,  Koichi Mizuno ,  Kimio Amemiya

发明人： Shinichiro Hori ,  Koichi Mizuno ,  Kimio Amemiya

IPC分类号： H01J17/49

CPC分类号： H01J11/12 ,  H01J11/24 ,  H01J2211/245 ,  H01J2211/323

摘要： A plasma display panel includes a front plate, and a rear plate disposed oppositely to the front plate and having barrier ribs to partition a discharge cell between the front plate and the rear plate. The front plate has a first electrode and a second electrode in parallel with the first electrode inside the discharge cell. The first electrode includes a first bus electrode, and a plurality of first transparent electrodes electrically connected to the first bus electrode and protruding toward a second-electrode side. The second electrode includes a second bus electrode, and a plurality of second transparent electrodes electrically connected to the second bus electrode and protruding toward a first-electrode side. A discharge gap is provided between tips of the plurality of first transparent electrodes and tips of the plurality of second transparent electrodes.

摘要翻译： 等离子体显示面板包括前板和与前板相对设置的后板，并且具有阻挡肋以在前板和后板之间分隔放电单元。 前板具有与放电单元内的第一电极平行的第一电极和第二电极。 第一电极包括第一总线电极和电连接到第一总线电极并朝向第二电极侧突出的多个第一透明电极。 第二电极包括第二总线电极和电连接到第二总线电极并朝向第一电极侧突出的多个第二透明电极。 在多个第一透明电极的尖端和多个第二透明电极的尖端之间设置放电间隙。

公开(公告)号：US20110150402A1

公开(公告)日：2011-06-23

申请号：US13054968

申请日：2009-08-06

申请人： Yutaka Hoshino ,  Masayoshi Tsukamoto ,  Koichi Mizuno ,  Eiji Konda ,  Keiichiro Sugimoto ,  Shinichi Niwa

发明人： Yutaka Hoshino ,  Masayoshi Tsukamoto ,  Koichi Mizuno ,  Eiji Konda ,  Keiichiro Sugimoto ,  Shinichi Niwa

IPC分类号： G02B6/44

CPC分类号： G02B6/443 ,  G02B6/4402

摘要： An optical fiber cable which is suitably set in a conduit by pushing the optical fiber cable into the conduit so as to insert the optical fiber cable through the conduit and which does not reduce the ease of manufacture and the mechanical characteristics of the optical fiber cable. The optical fiber cable includes an optical fiber cable core wire and a sheath covering the optical fiber cable core wire, wherein a dynamic friction coefficient between a surface of the sheath of the optical fiber cable and a surface of a sheath of another optical fiber cable is 0.17 to 0.34, and a dynamic friction coefficient between the surface of the sheath of the optical fiber cable and a surface of a sheet composed of polyvinyl chloride is 0.30 to 0.40.

摘要翻译： 一种光缆，其通过将光纤电缆推入导管中适当地设置在导管中，以便将光纤电缆插入导管中，并且不会降低光纤电缆的制造容易性和机械特性。 光缆包括光纤电缆芯线和覆盖光缆芯线的护套，其中光纤电缆护套的表面与另一光纤电缆护套表面之间的动摩擦系数为 0.17〜0.34，光缆的护套表面和由聚氯乙烯构成的片的表面之间的动摩擦系数为0.30〜0.40。

公开(公告)号：US06360111B1

公开(公告)日：2002-03-19

申请号：US09415117

申请日：1999-10-08

申请人： Koichi Mizuno ,  Akira Enokihara ,  Hidetaka Higashino ,  Kentaro Setsune

发明人： Koichi Mizuno ,  Akira Enokihara ,  Hidetaka Higashino ,  Kentaro Setsune

IPC分类号： H01P708

CPC分类号： H01P1/20381 ,  H01P1/203 ,  H01P7/082 ,  H01P7/086 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).

摘要翻译： 在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。 在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。 其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和 所述输入输出端子（13）形成为相对的。 通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。 此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。