公开(公告)号：US08488871B2

公开(公告)日：2013-07-16

申请号：US13002349

申请日：2009-06-29

申请人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

发明人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

IPC分类号： G06K9/00 ,  A61K49/00

CPC分类号： G01N29/069 ,  G01N29/262 ,  G01N2291/106 ,  G01N2291/267

摘要： A three-dimensional ultrasonic inspection apparatus includes: an ultrasonic transducer disposed m×n piezoelectric vibrators in a matrix; a signal processing device to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; and a display processing device to display a result of processing the three-dimensional image data generated by the signal processing device, wherein the display processing device includes a peak detecting unit to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction, a joint portion image creation unit to create a three-dimensional image of the joined area by mapping z direction distance of the first peak and the second peak to x-y plane, a determination unit to determine whether the joined area is sound or not, and a display unit to display the three-dimensional image and the determination result of the joined area.

摘要翻译： 一种三维超声波检查装置包括：以矩阵形式设置m×n个压电振动器的超声波换能器; 信号处理装置，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 以及显示处理装置，用于显示由信号处理装置生成的三维图像数据的处理结果，其中显示处理装置包括峰值检测单元，用于检测三维图像的强度分布的第一峰值和第二峰值 在深度（z）方向上的三维图像数据，联合部分图像创建单元，通过将第一峰值和第二峰值的z方向距离映射到xy平面来创建连接区域的三维图像，确定单元 确定接合区域是否是声音;以及显示单元，用于显示接合区域的三维图像和确定结果。

公开(公告)号：US20110102429A1

公开(公告)日：2011-05-05

申请号：US13002349

申请日：2009-06-29

申请人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

发明人： Shin Matsumoto ,  Takahiro Ikeda ,  Hirokazu Karasawa

IPC分类号： G06T15/00 ,  G06K9/00

CPC分类号： G01N29/069 ,  G01N29/262 ,  G01N2291/106 ,  G01N2291/267

摘要： A three-dimensional ultrasonic inspection apparatus includes: an ultrasonic transducer disposed m×n piezoelectric vibrators in a matrix; a signal processing device to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; and a display processing device to display a result of processing the three-dimensional image data generated by the signal processing device, wherein the display processing device includes a peak detecting unit to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction, a joint portion image creation unit to create a three-dimensional image of the joined area by mapping z direction distance of the first peak and the second peak to x-y plane, a determination unit to determine whether the joined area is sound or not, and a display unit to display the three-dimensional image and the determination result of the joined area.

摘要翻译： 一种三维超声波检查装置包括：以矩阵形式设置m×n个压电振动器的超声波换能器; 信号处理装置，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 以及显示处理装置，用于显示由信号处理装置生成的三维图像数据的处理结果，其中显示处理装置包括峰值检测单元，用于检测三维图像的强度分布的第一峰值和第二峰值 在深度（z）方向上的三维图像数据，联合部分图像创建单元，通过将第一峰值和第二峰值的z方向距离映射到xy平面来创建连接区域的三维图像，确定单元 确定接合区域是否是声音;以及显示单元，用于显示接合区域的三维图像和确定结果。

公开(公告)号：US08811721B2

公开(公告)日：2014-08-19

申请号：US13513685

申请日：2010-11-29

申请人： Shin Matsumoto ,  Takahiro Ikeda

发明人： Shin Matsumoto ,  Takahiro Ikeda

IPC分类号： G06K9/00 ,  A61K49/00 ,  G01N29/06

CPC分类号： G01N29/0672 ,  G01N29/069 ,  G01N29/44 ,  G01N2291/106 ,  G01N2291/267 ,  G01N2291/2672

摘要： A three-dimensional ultrasonic inspection apparatus 10 can make increased inspection accuracy in comparison to the conventional apparatus and includes: an ultrasonic transducer 11 disposed m×n piezoelectric vibrators in a matrix; a signal processing unit 17 to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; a peak detecting element 51, 52 to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction; a joint portion image creation unit 36 to create a three-dimensional image of the joined area 15 by mapping z direction distance of the first peak and the second peak to x-y plane; a determination unit 37 to determine whether the joined area 15 is sound by two-step determination; and a display unit 38 to display the three-dimensional image and the determination result, of the joined area 15.

摘要翻译： 与以往的装置相比，三维超声波检查装置10能够提高检查精度，包括：超声波传感器11，以矩阵形式设置m×n个压电振动器; 信号处理单元17，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 检测深度（z）方向上的三维图像数据的强度分布的第一峰值和第二峰值的峰值检测元件51,52; 关节部分图像创建单元36，通过将第一峰值和第二峰值的z方向距离映射到x-y平面来创建连接区域15的三维图像; 确定单元37，通过两步确定来确定接合区域15是否是声音; 以及显示单元38，用于显示接合区域15的三维图像和确定结果。

公开(公告)号：US20120243771A1

公开(公告)日：2012-09-27

申请号：US13513685

申请日：2010-11-29

申请人： Shin Matsumoto ,  Takahiro Ikeda

发明人： Shin Matsumoto ,  Takahiro Ikeda

IPC分类号： G06K9/46

CPC分类号： G01N29/0672 ,  G01N29/069 ,  G01N29/44 ,  G01N2291/106 ,  G01N2291/267 ,  G01N2291/2672

摘要： A three-dimensional ultrasonic inspection apparatus 10 can make increased inspection accuracy in comparison to the conventional apparatus and includes: an ultrasonic transducer 11 disposed m×n piezoelectric vibrators in a matrix; a signal processing unit 17 to receive, detect an echo, and generate a three-dimensional image data by processing an electric signal of the echo detected; a peak detecting element 51, 52 to detect a first peak and a second peak of an intensity distribution of the three-dimensional image data in a depth (z) direction; a joint portion image creation unit 36 to create a three-dimensional image of the joined area 15 by mapping z direction distance of the first peak and the second peak to x-y plane; a determination unit 37 to determine whether the joined area 15 is sound by two-step determination; and a display unit 38 to display the three-dimensional image and the determination result, of the joined area 15.

摘要翻译： 与以往的装置相比，三维超声波检查装置10能够提高检查精度，包括：超声波传感器11，以矩阵形式设置m×n个压电振动器; 信号处理单元17，用于通过处理检测到的回波的电信号来接收，检测回波并产生三维图像数据; 检测深度（z）方向上的三维图像数据的强度分布的第一峰值和第二峰值的峰值检测元件51,52; 关节部分图像创建单元36，通过将第一峰值和第二峰值的z方向距离映射到x-y平面来创建连接区域15的三维图像; 确定单元37，通过两步确定来确定接合区域15是否是声音; 以及显示单元38，用于显示接合区域15的三维图像和确定结果。

公开(公告)号：US20110042693A1

公开(公告)日：2011-02-24

申请号：US12933042

申请日：2009-04-09

申请人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

发明人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

IPC分类号： H01L33/08 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1214

摘要： A semiconductor device (10) includes a support substrate (14), an adhered device part (11) adhered to the support substrate (14), a multilayer device part (13) stacked on the adhered device part (11), and an adjacent device part (12) formed in a region adjacent to the adhered device part on the support substrate (14). The adhered device part (11), the multilayer device part (13), and the adjacent device part (12) are electrically connected to one another.

摘要翻译： 半导体装置（10）包括支撑基板（14），粘附到支撑基板（14）的粘合装置部分（11），堆叠在粘附装置部分（11）上的多层装置部分（13） 装置部分（12）形成在与支撑基板（14）上的粘附装置部分相邻的区域中。 粘合装置部分（11），多层装置部分（13）和相邻装置部分（12）彼此电连接。

公开(公告)号：US20100289037A1

公开(公告)日：2010-11-18

申请号：US12812162

申请日：2008-10-10

申请人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  kenshi Tada

发明人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  kenshi Tada

IPC分类号： H01L33/00 ,  H01L27/092 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/124 ,  H01L29/78 ,  H01L29/78654

摘要： The present invention provides a semiconductor device having a plurality of MOS transistors with controllable threshold values in the same face and easy to manufacture, a manufacturing method thereof and a display device. The invention is a semiconductor device having a plurality of MOS transistors in the same face each having a structure formed by stacking a semiconductor active layer, a gate insulator, and a gate electrode, wherein the semiconductor device includes: an insulating layer stacked on a side opposite to a gate electrode side of the semiconductor active layer; and a conductive electrode stacked on a side opposite to a semiconductor active layer side of the insulating layer and extending over at least two of the plurality of MOS transistors.

摘要翻译： 本发明提供一种半导体器件，其具有在相同的面上具有可控制的阈值的多个MOS晶体管并且易于制造，其制造方法和显示装置。 本发明是一种具有多个MOS晶体管的半导体器件，它们具有通过层叠半导体有源层，栅极绝缘体和栅电极形成的结构，其中半导体器件包括：堆叠在一侧的绝缘层 与半导体有源层的栅电极侧相对; 以及在与所述绝缘层的半导体有源层侧相反的一侧层叠的多个MOS晶体管中的至少两个上延伸的导电电极。

公开(公告)号：US20100270658A1

公开(公告)日：2010-10-28

申请号：US12746156

申请日：2008-09-12

申请人： Kazuo Nakagawa ,  Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kenshi Tada ,  Yutaka Takafuji

发明人： Kazuo Nakagawa ,  Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kenshi Tada ,  Yutaka Takafuji

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78606

摘要： A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer (16) is formed, (ii) then bonding the device substrate to a carrier target substrate, and (iii) transferring the transfer layer (16) onto the carrier substrate (30) by cleaving the device substrate along a portion in which the hydrogen ions or the rare gas ions are doped, the method including providing a blocking layer (11) for blocking diffusion of a bubble-causing substance between (i) a bonding surface (13), which serves as a bonding interface between the device substrate and the carrier substrate, and (ii) the transfer layer (16). This prevents bubbles from forming at the bonding interface between the semiconductor substrate and the target substrate due to the diffusion of the bubble-causing substance.

摘要翻译： 公开了一种用于制造半导体器件的方法，该半导体器件通过（i）将氢离子或稀有气体离子掺杂到其中形成转移层（16）的器件衬底中，（ii）然后将器件衬底接合到载体目标衬底， 以及（iii）通过沿着掺杂有氢离子或稀有气体离子的部分裂开所述器件衬底，将所述转移层（16）转移到所述载体衬底（30）上，所述方法包括提供用于 在（i）用作器件衬底和载体衬底之间的结合界面的接合表面（13）和（ii）转移层（16）之间阻塞气泡引起物质的扩散。 这样可防止由于起泡物质的扩散而在半导体衬底与目标衬底之间的结合界面处形成气泡。

公开(公告)号：US06278680B1

公开(公告)日：2001-08-21

申请号：US09275424

申请日：1999-03-24

申请人： Yasushi Miyauchi ,  Eiji Sahota ,  Shin Matsumoto ,  Kazuhiro Soga ,  Motoyasu Terao

发明人： Yasushi Miyauchi ,  Eiji Sahota ,  Shin Matsumoto ,  Kazuhiro Soga ,  Motoyasu Terao

IPC分类号： G11B712

CPC分类号： G11B7/268 ,  G11B7/00557 ,  G11B7/26

摘要： An initial crystallization method of a recording medium such as a phase-change optical disk, which comprises forming a light spot composed of at least two flat elliptical beam spots each having a long axis direction and a short axis direction and irradiating a rotating recording medium with the light spot such that the long axis direction of the beam spots becomes other direction than the parallel direction to the track direction of the recording medium, wherein the above-described light spot has at least two peaks of light intensity in the short axis direction and the interval of said two peaks of light intensity is 10 &mgr;m or smaller but not smaller than 2 &mgr;m, and a device for carrying out the initial crystallization method. By the initial crystallization method and the device thereof, the initial crystallization of the recording film of the recording medium can be surely carried out at a high speed without causing non-uniformity.

摘要翻译： 一种诸如相变光盘的记录介质的初始结晶方法，包括形成由至少两个具有长轴方向和短轴方向的平坦椭圆形光束点组成的光斑，并且将旋转记录介质照射 光斑使得光斑的长轴方向成为与记录介质的轨迹方向平行的方向以外的方向，其中上述光点在短轴方向上具有至少两个光强度的峰值，以及 所述两个光强度峰值的间隔为10μm或更小但不小于2μm，以及用于进行初始结晶方法的装置。通过初始结晶方法及其装置，记录膜的初始结晶 可以高速地可靠地进行记录介质，而不会引起不均匀。

公开(公告)号：US08421076B2

公开(公告)日：2013-04-16

申请号：US12674560

申请日：2008-09-08

申请人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L29/72

CPC分类号： H01L27/1266 ,  H01L21/02076 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78603 ,  Y10T428/24355

摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

摘要翻译： 本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有 算术平均粗糙度不大于0.4nm。

公开(公告)号：US20110309467A1

公开(公告)日：2011-12-22

申请号：US13141332

申请日：2009-11-25

申请人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Kenshi Tada

发明人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Kenshi Tada

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1266

摘要： Disclosed is a semiconductor device including a substrate for bonding (10a), and a semiconductor element part (25aa) which is bonded to the substrate (10a), and in which an element pattern (T) is formed, wherein in a bonded interface between the substrate (10a) and the semiconductor element part (25aa), recessed portions (23a) are formed in at least one of the substrate (10a) and the semiconductor element part (25aa).

摘要翻译： 公开了一种包括用于接合的基板（10a）的半导体器件和接合到基板（10a）的半导体元件部分（25aa），并且其中形成有元件图案（T），其中在 在基板（10a）和半导体元件部（25aa）中的至少一个上形成有基板（10a）和半导体元件部（25a），凹部（23a）。