公开(公告)号：US08715916B2

公开(公告)日：2014-05-06

申请号：US13430691

申请日：2012-03-27

申请人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Takanori Nakano

发明人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Takanori Nakano

IPC分类号： G03F7/40 ,  H01L21/027

CPC分类号： B44C1/227 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0335 ,  H01L21/0337

摘要： A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

摘要翻译： 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括基础组分和交联剂。 交联剂具有由以下通式（i）表示的部分结构。 X表示氧原子，硫原子或-NR-。 R表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。 n1为1〜6的整数.R1表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。

公开(公告)号：US20120181251A1

公开(公告)日：2012-07-19

申请号：US13430691

申请日：2012-03-27

申请人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Takanori Nakano

发明人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Takanori Nakano

IPC分类号： B44C1/22 ,  G03F7/00

CPC分类号： B44C1/227 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0335 ,  H01L21/0337

摘要： A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

摘要翻译： 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括基础组分和交联剂。 交联剂具有由以下通式（i）表示的部分结构。 X表示氧原子，硫原子或-NR-。 R表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。 n1为1〜6的整数.R1表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。

公开(公告)号：US09040232B2

公开(公告)日：2015-05-26

申请号：US13246915

申请日：2011-09-28

申请人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

发明人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

IPC分类号： G03F7/20 ,  H01L21/311 ,  G03F7/09 ,  G03F7/11 ,  C08K5/42 ,  C08L101/02

CPC分类号： C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

摘要： Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

摘要翻译： 本发明提供的方法包括：（1）使用形成抗蚀剂下层膜的组合物在待处理基板的上表面侧形成抗蚀剂下层膜，该组合物含有（A）具有基团的化合物 由下式（1）表示; （2）通过在抗蚀剂下层膜上涂布抗蚀剂组合物形成抗蚀剂涂膜; （3）通过用辐射选择性地照射抗蚀剂涂膜来使抗蚀剂涂膜曝光; （4）通过显影曝光的抗蚀剂涂膜形成抗蚀剂图案; 和（5）通过使用抗蚀剂图案作为掩模对抗蚀剂下层膜和基板进行依次干蚀刻，在要加工的基板上形成预定图案。

公开(公告)号：US20120129353A1

公开(公告)日：2012-05-24

申请号：US13246915

申请日：2011-09-28

申请人： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

发明人： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

IPC分类号： H01L21/311 ,  C08K5/07 ,  H01L21/312

CPC分类号： C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

摘要： Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

摘要翻译： 本发明提供的方法包括：（1）使用形成抗蚀剂下层膜的组合物在待处理基板的上表面侧形成抗蚀剂下层膜，该组合物含有（A）具有基团的化合物 由下式（1）表示; （2）通过在抗蚀剂下层膜上涂布抗蚀剂组合物形成抗蚀剂涂膜; （3）通过用辐射选择性地照射抗蚀剂涂膜来使抗蚀剂涂膜曝光; （4）通过显影曝光的抗蚀剂涂膜形成抗蚀剂图案; 和（5）通过使用抗蚀剂图案作为掩模对抗蚀剂下层膜和基板进行依次干蚀刻，在要加工的基板上形成预定图案。