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    Film having gas permeability
    1.
    发明授权
    Film having gas permeability 有权
    具有透气性的薄膜

    公开(公告)号：US06348271B1

    公开(公告)日：2002-02-19

    申请号：US09445194

    申请日：1999-12-02

    申请人： Shinji Nakata ,  Youichi Kugimiya ,  Chikashi Okayama ,  Takanori Nakashima ,  Yuji Ando

    发明人： Shinji Nakata ,  Youichi Kugimiya ,  Chikashi Okayama ,  Takanori Nakashima ,  Yuji Ando

    IPC分类号： B32B2700

    CPC分类号： C08J5/18 ,  B29C55/04 ,  B29K2023/12 ,  B29K2995/0065 ,  C08J2323/10 ,  C08J2323/16 ,  C08L23/10 ,  C08L23/12 ,  C08L23/142 ,  C08L23/16 ,  Y10T428/31855 ,  Y10T428/31909 ,  C08L2666/04

    摘要： An object of the present invention is to provide a drawn polypropylene film as a wrapping material that has transparency and mechanical properties sufficient as a wrapping material yet having the needed gas permeability for maintaining the freshness of the enclosed goods and additionally enables control of permeability of gases to a certain proportion if needed even if secondary steps such as perforation processing, etc., are eliminated. The present invention provides a polypropylene film drawn at least monoaxially which comprises a propylene resin composition comprising a propylene polymer component and a copolymer component containing ethylene and propylene, wherein a content of the copolymer component is 7 to 70% by weight based on the weight of the composition, and the film has a thickness [D1] of 10 to 100&mgr;m and has the following characteristics (1) to (3): (1) [TH2O] (a permeability of water vapor)=9 to 50 (unit: g/m2·24 Hr, in accordance with JIS Z-0208), (2) [TO2] (a permeability of oxygen gas)=600-12,500 (unit: nmol (STP)/m2·s·100 kPa, in accordance with JIS K-7126A), (3) [Tethylene] (a permeability of ethylene gas)=600-22,500 (unit: nmol (STP)/m2·s·100 kPa, in accordance with JIS K-7126A.)

    摘要翻译： 本发明的目的是提供一种作为包装材料的拉伸聚丙烯薄膜，其具有足够的透明度和机械性能作为包装材料，但具有所需的气体渗透性，以保持封闭的商品的新鲜度，并且还可以控制气体的渗透性 如果需要，即使消除诸如穿孔处理等的二次步骤，也能够达到一定比例。 本发明提供至少单轴拉伸的聚丙烯薄膜，其包含丙烯聚合物组分和含有乙烯和丙烯的共聚物组分的丙烯树脂组合物，其中共聚物组分的含量为7至70重量％，基于 该组合物和膜的厚度[D1]为10〜100μm，具有以下特征（1）〜（3）：（1）[TH 2 O]（水蒸气的渗透性）= 9〜50（单位：g / m2·Hr，根据JIS Z-0208），（2）[TO2]（氧气的渗透性）= 600-12,500（单位：nmol（STP）/ m 2·s.100kPa），根据 JIS K-7126A），（3）[Tethylene]（乙烯气体的渗透性）= 600-22,500（单位：nmol（STP）/ m2.s.100kPa，按照JIS K-7126A）

    Bipolar transistor
    3.
    发明授权
    Bipolar transistor 有权
    双极晶体管

    公开(公告)号：US08716835B2

    公开(公告)日：2014-05-06

    申请号：US13124873

    申请日：2009-10-16

    申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    IPC分类号： H01L29/66 ,  H01L29/737 ,  H01L29/20

    CPC分类号： H01L29/7371 ,  H01L29/0649 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66318

    摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

    摘要翻译： 双极晶体管设置有发射极层，基极层和集电极层。 发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

    Semiconductor device using a group III nitride-based semiconductor
    4.
    发明授权
    Semiconductor device using a group III nitride-based semiconductor 有权
    使用III族氮化物基半导体的半导体器件

    公开(公告)号：US08674407B2

    公开(公告)日：2014-03-18

    申请号：US12919640

    申请日：2009-03-12

    申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7785

    摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.

    摘要翻译： 本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1） 具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08525229B2

    公开(公告)日：2013-09-03

    申请号：US12299542

    申请日：2007-05-07

    申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    IPC分类号： H01L29/205 ,  H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316

    摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.

    摘要翻译： 半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。 盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。 这种盖层的z随着远离电子供应层而单调减小。

    BIPOLAR TRANSISTOR
    6.
    发明申请
    BIPOLAR TRANSISTOR 有权
    双极晶体管

    公开(公告)号：US20110241075A1

    公开(公告)日：2011-10-06

    申请号：US13124872

    申请日：2009-10-16

    申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    IPC分类号： H01L29/737

    CPC分类号： H01L29/7371 ,  H01L29/045 ,  H01L29/2003

    摘要： A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0≦xc≦1, 0≦yc≦1, 0

    摘要翻译： 双极晶体管包括：基板; 具有p导电型的集电极和基极层，具有n导电型的发射极层。 集电极层形成在衬底上方并且包括第一氮化物半导体。 具有p型导电型的基底层形成在集电极层上，并且包括第二耐磨半导体。 具有n导电型的发射极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得相对于基板的表面的晶体生长方向与基板的[0001]方向平行。 第一氮化物半导体包括：InycAlxcGa1-xc-ycN（0＆nlE; xc＆nlE; 1,0＆amp; nlE; yc＆nlE; 1,0

    Steam cooking apparatus
    7.
    发明授权
    Steam cooking apparatus 失效
    蒸汽烹饪器具

    公开(公告)号：US07802564B2

    公开(公告)日：2010-09-28

    申请号：US10583974

    申请日：2004-12-08

    申请人： Yuji Ando ,  Kazuyuki Matsubayashi ,  Shinya Ueda

    发明人： Yuji Ando ,  Kazuyuki Matsubayashi ,  Shinya Ueda

    IPC分类号： A21B1/08 ,  A21B1/22

    CPC分类号： F24C15/327

    摘要： In a ceiling part of a heating chamber, a sub-cavity is provided in which a steam-heating heater is housed. Steam generated by a steam generating device is heated by the steam-heating heater inside the sub-cavity to be brought into an overheated state, and is then jetted out through upper jet holes provided in the ceiling part of the heating chamber and through side jet holes provided in lower parts of the side walls of the heating chamber at both sides thereof. Food is supported on a rack to be in a state floating above the floor surface of the heating chamber, and, through the side jet holes, steam is jetted toward under the food.

    摘要翻译： 在加热室的天花板部分中，设置有容纳蒸汽加热加热器的子腔。 由蒸汽发生装置产生的蒸汽由子腔内的蒸汽加热加热器加热，使其处于过热状态，然后通过设置在加热室的顶部的上部喷射孔并通过侧面喷射 设置在加热室侧壁的两侧的孔。 食物被支撑在架子上，处于浮在加热室的地板表面上方的状态，并且通过侧面喷射孔将蒸汽朝向食物下方喷射。

    Steam Cooking Apparatus
    9.
    发明申请
    Steam Cooking Apparatus 失效
    蒸汽烹饪设备

    公开(公告)号：US20080223352A1

    公开(公告)日：2008-09-18

    申请号：US10583974

    申请日：2004-12-08

    申请人： Yuji Ando ,  Kazuyuki Matsubayashi ,  Shinya Ueda

    发明人： Yuji Ando ,  Kazuyuki Matsubayashi ,  Shinya Ueda

    IPC分类号： F24C1/00

    CPC分类号： F24C15/327

    摘要： In a ceiling part of a heating chamber, a sub-cavity is provided in which a steam-heating heater is housed. Steam generated by a steam generating device is heated by the steam-heating heater inside the sub-cavity to be brought into an overheated state, and is then jetted out through upper jet holes provided in the ceiling part of the heating chamber and through side jet holes provided in lower parts of the side walls of the heating chamber at both sides thereof. Food is supported on a rack to be in a state floating above the floor surface of the heating chamber, and, through the side jet holes, steam is jetted toward under the food.

    摘要翻译： 在加热室的天花板部分中，设置有容纳蒸汽加热加热器的子腔。 由蒸汽发生装置产生的蒸汽由子腔内的蒸汽加热加热器加热，使其处于过热状态，然后通过设置在加热室的顶部的上部喷射孔并通过侧面喷射 设置在加热室侧壁的两侧的孔。 食物被支撑在架子上，处于浮在加热室的地板表面上方的状态，并且通过侧面喷射孔将蒸汽朝向食物下方喷射。