公开(公告)号：US06294299B2

公开(公告)日：2001-09-25

申请号：US09137081

申请日：1998-08-20

申请人： Shinji Tsuchida ,  Hiroaki Niino ,  Satoshi Kojima ,  Daisuke Tazawa

发明人： Shinji Tsuchida ,  Hiroaki Niino ,  Satoshi Kojima ,  Daisuke Tazawa

IPC分类号： G03G1502

CPC分类号： G03G5/08235 ,  G03G5/08242

摘要： An electrophotographic light-receiving member has a conductive support and a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table. The photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs 50-90% of incident image exposure light and a second layer region that absorbs 60-90% of pre-exposure light incident on the photoconductive layer. The Group IIIb element is present such that its content decreases from the conductive support side to the surface side. In three embodiments the photoconductive layer has, respectively: 10-30 at. % H; 10-20 at. % H and 25-40 at % H; an optical band gap of 1.75-1.85 eV, 1.65-1.75 eV and 1.80-1.90 eV and a characteristic energy of each of 50-55 meV.

摘要翻译： 电子照相受光部件具有导电性支持体和由包含硅原子作为基体的非单晶材料，氢和/或卤素原子以及属于元素周期表IIIb族的元素构成的光电导层。 光电导层从表面侧朝向导电支撑侧，吸收50-90％的入射图像曝光光的第三层区域和吸收入射在光电导层上的60-90％的预曝光光的第二层区域 。 IIIb族元素的存在使得其含量从导电性支持侧减少到表面侧。 在三个实施例中，光电导层分别具有：10-30英寸 ％ H; 10-20在 ％H和25-40at％H; 1.75〜85 eV，1.65〜1.75 eV，1.80〜1.90 eV的光学带隙，50〜55 meV的特征能量。

公开(公告)号：US07051671B2

公开(公告)日：2006-05-30

申请号：US10875404

申请日：2004-06-25

申请人： Makoto Aoki ,  Toshiyasu Shirasuna ,  Hiroaki Niino ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Shinji Tsuchida ,  Daisuke Tazawa ,  Yukihiro Abe

发明人： Makoto Aoki ,  Toshiyasu Shirasuna ,  Hiroaki Niino ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Shinji Tsuchida ,  Daisuke Tazawa ,  Yukihiro Abe

IPC分类号： C23C16/00

CPC分类号： H01J37/32174 ,  G03G5/08278 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32568

摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.

摘要翻译： 一种真空处理方法，包括将待处理的物品放置在反应容器中，同时向相同的高频电极提供具有不同频率的至少两个高频电源，以通过被引入到高频电极的高频功率在反应容器中产生等离子体 来自高频电极的反应容器。 提供的至少两个高频功率的频率和功率值满足所需的关系。

公开(公告)号：US06861373B2

公开(公告)日：2005-03-01

申请号：US10011776

申请日：2001-12-11

申请人： Makoto Aoki ,  Toshiyasu Shirasuna ,  Hiroaki Niino ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Shinji Tsuchida ,  Daisuke Tazawa ,  Yukihiro Abe

发明人： Makoto Aoki ,  Toshiyasu Shirasuna ,  Hiroaki Niino ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Shinji Tsuchida ,  Daisuke Tazawa ,  Yukihiro Abe

IPC分类号： H05H1/46 ,  C23C16/505 ,  G03G5/08 ,  G03G5/082 ,  H01J37/32 ,  H01L21/205 ,  G03G5/00

CPC分类号： H01J37/32174 ,  G03G5/08278 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32568

摘要： A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.

摘要翻译： 一种真空处理方法，其特征在于，将待处理物品放置在反应容器中，同时向至少一个高频电极供给具有相互不同频率的至少两个高频电力，以通过高频率在反应容器中产生等离子体 从高频电极引入反应容器，从而处理制品。 提供的至少两个高频功率的频率和功率值满足所需的关系。

公开(公告)号：US08465891B2

公开(公告)日：2013-06-18

申请号：US12943977

申请日：2010-11-11

申请人： Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

发明人： Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

IPC分类号： G03G5/00

CPC分类号： G03G5/08235 ,  G03G5/0433 ,  G03G5/144 ,  G03G5/14704

摘要： An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2≧0.07×DS−0.38  Expression (1) HPmax≦0.04×DS+0.60  Expression (2)

摘要翻译： 电子照相感光构件包括光电导层，中间层和表面层。 当表面层的Si + C原子密度由DS×1022原子/ cm3表示时，DS为6.60以上，并且当光电导层中氢量分布中H /（Si + H）的最大值 在层厚度方向上由HPmax表示，第二光电导区域中的H /（Si + H）的平均值由HP2表示，DS和HP2满足以下表达式（1），DS和HPmax 满足以下表达式（2）。 HP2> = 0.07×DS-0.38表达式（1）HPmax@0.04×DS+0.60表达式（2）

公开(公告)号：US08440377B2

公开(公告)日：2013-05-14

申请号：US12949053

申请日：2010-11-18

申请人： Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

发明人： Tomohito Ozawa ,  Motoya Yamada ,  Kazuyoshi Akiyama ,  Daisuke Tazawa

IPC分类号： G03G5/043

CPC分类号： G03G5/0433 ,  G03G5/08228

摘要： An electrophotographic photosensitive member includes a substrate, a photoconductive layer, an intermediate layer, and a surface layer sequentially formed. The intermediate layer contains silicon, carbon and hydrogen, and a distribution of a hydrogen ratio, which is a ratio of the number of hydrogen atoms to the number of silicon, carbon and hydrogen atoms, in the intermediate layer has a maximum region. A largest hydrogen atomic ratio in the intermediate layer is larger than a hydrogen atomic ratio in the surface layer, and the hydrogen atomic ratio in the surface layer is 0.30 to 0.45. A distribution of a carbon atomic ratio, which is a ratio of the number of carbon atoms to the number of silicon and carbon atoms, in the intermediate layer has a maximum and a minimum region. A carbon atomic ratio in the maximum region is 0.53 to 0.63, a carbon atomic ratio in the minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate layer is partially superimposed on the minimum carbon region.

摘要翻译： 电子照相感光构件包括基底，光电导层，中间层和顺序形成的表面层。 中间层含有硅，碳和氢，中间层中氢原子数与硅原子数，碳原子数和氢原子数之比的氢比分布最大。 中间层中最大的氢原子比大于表面层中的氢原子比，表面层中的氢原子比为0.30〜0.45。 作为中间层的碳原子数与硅原子数与碳原子数的比例的碳原子比的分布具有最大值和最小值。 最大区域的碳原子比为0.53〜0.63，最小区域的碳原子比为0.47以上，中间层的最大氢区域部分地叠加在最小碳区域上。

公开(公告)号：US20110129776A1

公开(公告)日：2011-06-02

申请号：US13056734

申请日：2009-12-16

申请人： Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

发明人： Kazuyoshi Akiyama ,  Shigenori Ueda ,  Daisuke Tazawa ,  Tomohito Ozawa

IPC分类号： G03G13/22

CPC分类号： G03G5/14704 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08285 ,  G03G13/045

摘要： An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

摘要翻译： 提供了能够在长时间内形成高质量图像的图像形成方法。 在图像形成方法中，使用电子照相感光构件，其具有由氢化非晶碳化硅形成的表面层，其中碳原子数与硅原子数与碳原子数之和的比率 在表面层中为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上，峰值波长 的预曝光光比图像曝光光的峰值波长短。

公开(公告)号：US06761128B2

公开(公告)日：2004-07-13

申请号：US09899188

申请日：2001-07-06

申请人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Toshiyasu Shirasuna ,  Tatsuyuki Aoike ,  Kazuyoshi Akiyama ,  Hitoshi Murayama ,  Takashi Otsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： H01L2100

CPC分类号： C23C16/24 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

摘要翻译： 在通过利用通过高频电源装置将高频电力提供给内部抽真空电抗器而产生的辉光放电来处理目标衬底表面的等离子体处理方法和装置中，多个阻抗调节装置 对应于多个电抗器的阻抗设置在电抗器一侧和高频电源装置一侧上的调节阻抗，并且高频电力通过对应于 反应堆。 可以在具有不同阻抗的多个反应器中以高效率和低成本进行等离子体处理。

公开(公告)号：US08445168B2

公开(公告)日：2013-05-21

申请号：US12949015

申请日：2010-11-18

申请人： Kazuyoshi Akiyama ,  Tomohito Ozawa ,  Daisuke Tazawa ,  Yuu Nishimura

发明人： Kazuyoshi Akiyama ,  Tomohito Ozawa ,  Daisuke Tazawa ,  Yuu Nishimura

IPC分类号： G03G5/04

CPC分类号： G03G5/0433 ,  G03G5/0507 ,  G03G5/08242 ,  G03G5/14704

摘要： The present invention provides an electrophotographic photosensitive member including a photoconductive layer, an intermediate layer made of hydrogenated amorphous silicon carbide on the photoconductive layer, and a surface layer made of hydrogenated amorphous silicon carbide on the intermediate layer, wherein a ratio (C/(Si+C); C2) in the surface layer is 0.61 to 0.75, and a sum of atom density of silicon and carbon is 6.60×1022 atoms/cm3 or more, a ratio (C/(Si+C); C1) and a sum (D1) of atom density of silicon and carbon in the intermediate layer increase continuously from the photoconductive layer toward the surface layer without exceeding C2 and D2, and the intermediate layer has a continuous region in which C1 is 0.25 to C2 while D1 is 5.50×1022 to 6.45×1022 atoms/cm3, the region being 150 nm or larger in a layer thickness direction, and an electrophotographic apparatus equipped therewith.

摘要翻译： 本发明提供了一种电子照相感光构件，其包括光导电层，在光电导层上由氢化非晶碳化硅制成的中间层，以及在中间层上由氢化非晶碳化硅制成的表面层，其中（C /（Si + C）; C2）为0.61〜0.75，硅与碳的原子密度之和为6.60×1022原子/ cm3以上，比例（C /（Si + C）：C1）和 中间层中硅和碳的原子密度之和（D1）不再超过C2和D2而从光电导层连续地朝向表面层增加，并且中间层具有C1为0.25至C2的连续区域，而D1为5.50 ×1022〜6.45×1022原子/ cm3，该区域在层厚方向上为150nm以上，以及配备有电子照相设备。

公开(公告)号：US20110117484A1

公开(公告)日：2011-05-19

申请号：US12943977

申请日：2010-11-11

申请人： Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

发明人： Tomohito Ozawa ,  Kazuyoshi Akiyama ,  Yuu Nishimura ,  Daisuke Tazawa

IPC分类号： G03G15/00

CPC分类号： G03G5/08235 ,  G03G5/0433 ,  G03G5/144 ,  G03G5/14704

摘要： An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2≧0.07×DS−0.38  Expression (1) HPmax≦0.04×DS+0.60  Expression (2)

摘要翻译： 电子照相感光构件包括光电导层，中间层和表面层。 当表面层的Si + C原子密度由DS×1022原子/ cm3表示时，DS为6.60以上，并且当光电导层中氢量分布中H /（Si + H）的最大值 在层厚度方向上由HPmax表示，第二光电导区域中的H /（Si + H）的平均值由HP2表示，DS和HP2满足以下表达式（1），DS和HPmax 满足以下表达式（2）。 HP2≥0.07×DS-0.38表达式（1）HPmax＆nlE; 0.04×DS + 0.60表达式（2）

公开(公告)号：US06443191B1

公开(公告)日：2002-09-03

申请号：US09842154

申请日：2001-04-26

申请人： Hitoshi Murayama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

发明人： Hitoshi Murayama ,  Tatsuyuki Aoike ,  Toshiyasu Shirasuna ,  Kazuyoshi Akiyama ,  Takashi Ohtsuka ,  Daisuke Tazawa ,  Kazuto Hosoi ,  Yukihiro Abe

IPC分类号： B65B3100

CPC分类号： H01L21/67017 ,  H01L21/67126

摘要： For making it feasible to suit to vacuum processing utilizing a system consisting of an exhaust section and a separable vacuum processing vessel section, to ensure flexibility of production, to prevent dust from attaching onto an article, so as to achieve increase in non-defective percentage of vacuum-processed articles, and also to suppress variability in vacuum processing characteristics among lots, an article is loaded into a movable vacuum processing vessel section, the vacuum processing vessel section is preliminarily pressure-reduced and moved, the vacuum processing vessel section is connected to an exhaust section, and communication is established between the vacuum processing vessel section and the exhaust section to perform vacuum processing. A first opening provided in the vacuum processing vessel section is connected to a second opening provided in the exhaust section and a vacuum seal valve of the first opening which is openable and closable, is opened. When opening the valve, the internal pressure of the vacuum processing vessel under reduced pressure is set higher than the pressure of another pressure-reduced space to be brought into communication therewith by the opening of the valve.

摘要翻译： 为了使其适用于利用由排气部和可分离真空处理容器部构成的系统的真空处理，为了确保生产的灵活性，防止灰尘附着在物品上，以达到无缺陷百分比的增加 的真空处理容器部分，并且还抑制批次之间的真空处理特性的变化，将物品装载到可移动真空处理容器部分中，真空处理容器部分被预先减压和移动，真空处理容器部分连接 到排气部分，并且在真空处理容器部分和排气部分之间建立连通以进行真空处理。 设置在真空处理容器部分中的第一开口连接到设置在排气部分中的第二开口，并且打开可打开和关闭的第一开口的真空密封阀。 当打开阀时，真空处理容器在减压下的内部压力设定为高于通过打开阀而与其连通的另一压力减小空间的压力。