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23 条记录 (耗时 0.039 秒)

    POLISHING METHOD
    2.
    发明申请
    POLISHING METHOD 有权
    抛光方法

    公开(公告)号：US20090286332A1

    公开(公告)日：2009-11-19

    申请号：US12465024

    申请日：2009-05-13

    申请人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

    发明人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

    IPC分类号： H01L21/66

    CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

    摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.

    摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括：进行第一抛光处理后的第一抛光处理，在第一抛光处理之后，在第二抛光处理之后执行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光处理 第二抛光工艺和第三抛光工艺，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时终止第三抛光处理。

    Polishing apparatus and polishing method
    3.
    发明申请
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US20070239309A1

    公开(公告)日：2007-10-11

    申请号：US11730891

    申请日：2007-04-04

    申请人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

    发明人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

    IPC分类号： G06F19/00

    CPC分类号： B24B37/005 ,  B24B49/105 ,  B24B49/12

    摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.

    摘要翻译： 抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。 抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器 以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

    Polishing apparatus and polishing method
    4.
    发明授权
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US08696924B2

    公开(公告)日：2014-04-15

    申请号：US11730891

    申请日：2007-04-04

    申请人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

    发明人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

    IPC分类号： G06F19/00

    CPC分类号： B24B37/005 ,  B24B49/105 ,  B24B49/12

    摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.

    摘要翻译： 抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。 抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器 以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

    Eddy current sensor and polishing method and apparatus
    6.
    发明授权
    Eddy current sensor and polishing method and apparatus 有权
    涡流传感器及抛光方法及装置

    公开(公告)号：US08657644B2

    公开(公告)日：2014-02-25

    申请号：US13313407

    申请日：2011-12-07

    申请人： Mitsuo Tada ,  Taro Takahashi

    发明人： Mitsuo Tada ,  Taro Takahashi

    IPC分类号： B24B49/10

    CPC分类号： B24B37/013 ,  B24B49/105

    摘要： An eddy current sensor is used for detecting a metal film (or conductive film) formed on a surface of a substrate such as a semiconductor wafer. The eddy current sensor includes a sensor coil disposed near a metal film or a conductive film formed on a substrate, and the sensor coil includes a detection coil operable to detect an eddy current produced in the metal film or the conductive film. The detection coil includes a coil formed by winding a wire by a single row and plural layers, the row being defined as a direction perpendicular to the substrate and the layer being defined as a direction parallel to the substrate.

    摘要翻译： 涡电流传感器用于检测在诸如半导体晶片的基板的表面上形成的金属膜（或导电膜）。 涡流传感器包括设置在形成在基板上的金属膜或导电膜附近的传感器线圈，并且传感器线圈包括可操作以检测在金属膜或导电膜中产生的涡流的检测线圈。 检测线圈包括通过以单行和多层缠绕线形成的线圈，该行被定义为垂直于衬底的方向，并且该层被定义为平行于衬底的方向。

    Substrate polishing apparatus and substrate polishing method
    7.
    发明授权
    Substrate polishing apparatus and substrate polishing method 有权
    基板抛光装置和基板抛光方法

    公开(公告)号：US07854646B2

    公开(公告)日：2010-12-21

    申请号：US12688021

    申请日：2010-01-15

    申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    IPC分类号： B24B49/00

    CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

    摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

    摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有研磨面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

    SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD
    8.
    发明申请
    SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD 有权
    基板抛光装置和底板抛光方法

    公开(公告)号：US20100112901A1

    公开(公告)日：2010-05-06

    申请号：US12688021

    申请日：2010-01-15

    申请人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    发明人： Tetsuji TOGAWA ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    IPC分类号： B24B49/04 ,  B24B49/10

    CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

    摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

    摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

    Substrate Polishing Apparatus And Substrate Polishing Method
    9.
    发明申请
    Substrate Polishing Apparatus And Substrate Polishing Method 有权
    基板抛光装置和基板抛光方法

    公开(公告)号：US20080139087A1

    公开(公告)日：2008-06-12

    申请号：US10559135

    申请日：2004-06-17

    申请人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    发明人： Tetsuji Togawa ,  Koichi Fukaya ,  Mitsuo Tada ,  Taro Takahashi ,  Yasunari Suto

    IPC分类号： B24B49/04 ,  B24B29/02

    CPC分类号： B24B37/013 ,  B24B49/105 ,  B24B49/12 ,  B24B49/16

    摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

    摘要翻译： 本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。 基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及 用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。 衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。