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公开(公告)号：US07960188B2
公开(公告)日：2011-06-14
申请号：US12465024
申请日：2009-05-13
申请人： Shinrou Ohta , Mitsuo Tada , Noburu Shimizu , Yoichi Kobayashi , Taro Takahashi , Eisaku Hayashi , Hiromitsu Watanabe , Tatsuya Kohama , Itsuki Kobata
发明人： Shinrou Ohta , Mitsuo Tada , Noburu Shimizu , Yoichi Kobayashi , Taro Takahashi , Eisaku Hayashi , Hiromitsu Watanabe , Tatsuya Kohama , Itsuki Kobata
IPC分类号： H01L21/00 , H01L21/302 , G01R31/26
CPC分类号： H01L22/26 , H01L21/3212 , H01L21/67219 , H01L22/14
摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.
摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括进行第一抛光处理，在第一抛光处理之后，在第二抛光处理之后进行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光工艺。 在第二抛光工艺和第三抛光工艺期间，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时，第三抛光处理结束。
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公开(公告)号：US20090286332A1
公开(公告)日：2009-11-19
申请号：US12465024
申请日：2009-05-13
申请人： Shinrou OHTA , Mitsuo Tada , Noburu Shimizu , Yoichi Kobayashi , Taro Takahashi , Eisaku Hayashi , Hiromitsu Watanabe , Tatsuya Kohama , Itsuki Kobata
发明人： Shinrou OHTA , Mitsuo Tada , Noburu Shimizu , Yoichi Kobayashi , Taro Takahashi , Eisaku Hayashi , Hiromitsu Watanabe , Tatsuya Kohama , Itsuki Kobata
IPC分类号： H01L21/66
CPC分类号： H01L22/26 , H01L21/3212 , H01L21/67219 , H01L22/14
摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.
摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括：进行第一抛光处理后的第一抛光处理，在第一抛光处理之后，在第二抛光处理之后执行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光处理 第二抛光工艺和第三抛光工艺，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时终止第三抛光处理。
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公开(公告)号：US20090142990A1
公开(公告)日：2009-06-04
申请号：US12367037
申请日：2009-02-06
申请人： Tatsuya KOHAMA , Itsuki Kobata , Toshikazu Nomura
发明人： Tatsuya KOHAMA , Itsuki Kobata , Toshikazu Nomura
摘要： A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.
摘要翻译： 抛光装置可以将抛光液体均匀且有效地提供给被抛光的表面。 抛光装置包括具有抛光表面的抛光台和用于保持半导体晶片并将半导体晶片压靠在抛光表面上的顶环。 抛光装置还包括用于将抛光液供给到研磨面的研磨液供给口，以及用于使抛光液供给口移动以使研磨液均匀地分布在工件的整个表面上的移动机构， 工件和抛光面。
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公开(公告)号：US20070135024A1
公开(公告)日：2007-06-14
申请号：US11634953
申请日：2006-12-07
申请人： Itsuki Kobata , Tatsuya Kohama
发明人： Itsuki Kobata , Tatsuya Kohama
CPC分类号： B24B53/017 , B24B37/26
摘要： A polishing pad enables efficient removal of a polishing product and an “old polishing liquid” remaining on a surface (polishing surface) or in through-holes of a polishing pad. The polishing pad has a polishing surface and a plurality of through-holes extending in the thickness direction, which communicate with each other by communication grooves. The through-holes have a diameter of, e.g., 2 to 5 mm. The aperture ratio of the through-holes is, e.g., 10 to 50% of the surface area of the polishing surface of the polishing pad. The depth of the communication grooves is, e.g., 40 to 60% of the thickness of the polishing pad. The width of the communication grooves is, e.g., 10 to 50% of the diameter of the through-holes.
摘要翻译： 抛光垫能够有效地去除抛光产品和残留在抛光垫的表面（抛光表面）上或通孔中的“旧抛光液”。 抛光垫具有研磨面和在厚度方向上延伸的多个通孔，其通过连通槽彼此连通。 通孔具有例如2至5mm的直径。 通孔的开口率例如为抛光垫的研磨面的表面积的10〜50％。 连通槽的深度例如为抛光垫的厚度的40〜60％。 连通槽的宽度例如为通孔直径的10〜50％。
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公开(公告)号：US20060105678A1
公开(公告)日：2006-05-18
申请号：US11086420
申请日：2005-03-23
申请人： Tatsuya Kohama , Itsuki Kobata , Toshikazu Nomura
发明人： Tatsuya Kohama , Itsuki Kobata , Toshikazu Nomura
IPC分类号： B24B51/00
摘要： A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.
摘要翻译： 抛光装置可以将抛光液体均匀且有效地提供给被抛光的表面。 抛光装置包括具有抛光表面的抛光台和用于保持半导体晶片并将半导体晶片压靠在抛光表面上的顶环。 抛光装置还包括用于将抛光液供给到研磨面的研磨液供给口，以及用于使抛光液供给口移动以使研磨液均匀地分布在工件的整个表面上的移动机构， 工件和抛光面。
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公开(公告)号：US09401293B2
公开(公告)日：2016-07-26
申请号：US13330881
申请日：2011-12-20
IPC分类号： B24B49/12 , B24B37/10 , B24B37/30 , B24B37/013 , H01L21/67 , H01L21/687 , B24B37/04 , B24B37/005
CPC分类号： B24B37/26 , B24B37/005 , B24B37/013 , B24B37/04 , B24B37/042 , B24B37/10 , B24B49/12 , H01L21/31053 , H01L21/67075 , H01L21/67092 , H01L21/67253 , H01L21/68721 , H01L22/26
摘要： A polishing apparatus for polishing a substrate includes a polishing table holding a polishing pad, a top ring configured to press the substrate against the polishing pad, and first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate. The polishing apparatus also includes spectroscopes each configured to measure at each wavelength an intensity of the reflected light received, and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.
摘要翻译： 用于抛光基板的抛光装置包括：保持抛光垫的抛光台，被配置为将基板压靠在抛光垫上的顶环;以及第一和第二光学头，每个被配置为将光施加到基板并且接收来自 底物。 抛光装置还包括分别被配置成在每个波长处测量接收到的反射光的强度，以及处理器，被配置为产生指示反射光的强度和波长之间的关系的光谱。 第一光学头被布置为面对基板的中心，并且第二光学头被布置成面对基板的周边部分。
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公开(公告)号：US07638030B2
公开(公告)日：2009-12-29
申请号：US10669468
申请日：2003-09-25
申请人： Osamu Nabeya , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Takeshi Iizumi , Nobuyuki Takada , Koichi Fukaya , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita
发明人： Osamu Nabeya , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Takeshi Iizumi , Nobuyuki Takada , Koichi Fukaya , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Tsukuru Suzuki , Kaoru Yamada , Yuji Makita
CPC分类号： C25F7/00
摘要： An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.
摘要翻译： 一种在完全消除CMP处理或者尽可能减少CMP处理负荷的电解处理装置可以处理和平坦化形成在基板表面上的导电材料，或者可以除去（清洁）附着的附着物 到工件（例如基板）的表面。 本发明包括一个电极部分，它包括平行设置的多个电极部件，每个电极部件包括一个电极和一个覆盖电极表面的离子交换器，一个用于保持工件的保持器，它能使工件靠近 或与电极部件的离子交换器接触，以及要连接到电极部分的每个电极部件的电极的电源。 电极构件的离子交换器包括具有优异表面平滑度的离子交换器和离子交换容量大的离子交换器。
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公开(公告)号：US06875335B2
公开(公告)日：2005-04-05
申请号：US10449515
申请日：2003-06-02
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译： 将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。 在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。 在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到 从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。 因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。
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公开(公告)号：US07578920B2
公开(公告)日：2009-08-25
申请号：US10948320
申请日：2004-09-24
申请人： Ikutaro Noji , Hozumi Yasuda , Takeshi Iizumi , Kazuto Hirokawa , Itsuki Kobata
发明人： Ikutaro Noji , Hozumi Yasuda , Takeshi Iizumi , Kazuto Hirokawa , Itsuki Kobata
CPC分类号： C25F7/00
摘要： An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.
摘要翻译： 电解处理装置可以以高精度和相对简单的结构稳定地检测电解处理的终点。 电解处理装置包括：处理电极，其能够接近或与处理对象接触; 用于向处理对象供电的馈电电极; 流体供应部分，用于在处理对象与处理电极和馈送电极中的至少一个之间提供流体; 用于在处理电极和馈电电极之间施加电压的处理电源; 驱动部，其用于使处理对象与所述处理电极和所述馈送电极中的至少一个相对移动; 以及用于从涡流损耗的变化中检测加工对象的厚度的涡流传感器。 传感器设置成不与来自处理电极和/或馈电电极的绝缘体接触（或单独地）接触。
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10.发明授权公开(公告)号：US07569135B2
公开(公告)日：2009-08-04
申请号：US11723934
申请日：2007-03-22
申请人： Mitsuhiko Shirakashi , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Ikutaro Noji , Kaori Yoshida
发明人： Mitsuhiko Shirakashi , Masayuki Kumekawa , Hozumi Yasuda , Itsuki Kobata , Ikutaro Noji , Kaori Yoshida
CPC分类号： C25F7/00 , B23H3/00 , B23H3/04 , B23H3/08 , B23H5/08 , B24B37/04 , C25F3/00 , C25F5/00 , H01L21/32115 , H01L21/3212
摘要： The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.
摘要翻译： 本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光来代替基板处理的全部或一部分。 电解处理设备包括：化学机械抛光部分，用于对基材的表面进行化学机械抛光; 具有处理电极和供电电极的电解处理部分，并且还具有设置在基板和处理电极之间或者基板和供电电极之间的至少一个的离子交换器，用于在存在的工件的表面进行电解处理 通过在处理电极和馈电电极之间施加电压的解决方案; 以及能够在所述化学机械抛光部和所述处理电极部之间自由移动的顶环。
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