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    SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20130175544A1

    公开(公告)日：2013-07-11

    申请号：US13824357

    申请日：2010-11-10

    申请人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Kazuhisa Yamauchi ,  Masatake Hangai ,  Masatoshi Nakayama

    发明人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Kazuhisa Yamauchi ,  Masatake Hangai ,  Masatoshi Nakayama

    IPC分类号： H01L29/20 ,  H01L21/02

    CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L29/0607 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7786

    摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).

    摘要翻译： 本发明的目的是获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的减小）。 提供了一种半导体器件，包括：电子行进通过的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

    Virtual tape apparatus, control method of virtual tape apparatus, and control section of electronic device
    8.
    发明授权
    Virtual tape apparatus, control method of virtual tape apparatus, and control section of electronic device 有权
    虚拟磁带装置，虚拟磁带装置的控制方法和电子装置的控制部分

    公开(公告)号：US08205041B2

    公开(公告)日：2012-06-19

    申请号：US12857060

    申请日：2010-08-16

    申请人： Hiroshi Otsuka

    发明人： Hiroshi Otsuka

    IPC分类号： G06F13/10

    CPC分类号： G06F3/064 ,  G06F3/0613 ,  G06F3/0619 ,  G06F3/0686

    摘要： A virtual tape apparatus is interposed between a host and a tape device so as to store data transmitted from the host to a logical tape volume. The virtual tape apparatus includes: a data communication unit that receives data transmitted from the host; a RAID device having a logical tape volume for storing the data; a management table that manages attribute information of data stored in the physical tape volume; a position determination section that determines the write starting position of the data stored in the logical tape volume on the physical tape volume based on the management table; and a drive control unit that writes data in the logical tape volume to the physical tape volume based on a result of the determination.

    摘要翻译： 在主机和磁带设备之间插入虚拟磁带设备，以将从主机发送的数据存储到逻辑磁带卷。 虚拟磁带装置包括：数据通信单元，其接收从主机发送的数据; 具有用于存储数据的逻辑磁带卷的RAID设备; 管理存储在物理磁带卷中的数据的属性信息的管理表; 位置确定部，其基于所述管理表，确定存储在所述物理磁带卷上的所述逻辑磁带卷中的数据的写入开始位置; 以及驱动控制单元，其基于所述确定的结果将所述逻辑磁带卷中的数据写入所述物理磁带卷。

    Immersion nozzle for continuous casting
    10.
    发明授权
    Immersion nozzle for continuous casting 有权
    浸入式喷嘴用于连铸

    公开(公告)号：US08113391B2

    公开(公告)日：2012-02-14

    申请号：US12403120

    申请日：2009-03-12

    申请人： Hiroshi Otsuka ,  Arito Mizobe ,  Hisatake Okumura ,  Masahide Yoshida ,  Koji Kido ,  Joji Kurisu

    发明人： Hiroshi Otsuka ,  Arito Mizobe ,  Hisatake Okumura ,  Masahide Yoshida ,  Koji Kido ,  Joji Kurisu

    IPC分类号： B22D41/00 ,  B22D41/50

    CPC分类号： B22D41/50

    摘要： An immersion nozzle for continuous casting including a tubular body, the tubular body having at the upper end an inlet from which molten steel is introduced into a passage extending from the inlet downward inside the tubular body, the tubular body having a bottom and being depressed in cross section at least at a lower section, the lower section having two narrow sidewalls and two broad sidewalls, the narrow sidewalls having a pair of opposing first outlets communicating with the passage, the bottom having a pair of second outlets communicating with the passage. The lower section has ridges projecting into the passage respectively from the inner surfaces of the broad sidewalls between the pair of first outlets. The second outlets are arranged symmetrically about the axis of the tubular body such that the axes of the second outlets cross each other within the passage.

    摘要翻译： 一种用于连续铸造的浸入式喷嘴，包括管状体，所述管状体在上端具有入口，钢管从入口向下延伸到从入口向下延伸的通道，管状体具有底部并被压下 截面至少在下部，下部具有两个窄侧壁和两个宽侧壁，窄侧壁具有与通道连通的一对相对的第一出口，底部具有与通道连通的一对第二出口。 下部具有分别从一对第一出口之间的宽侧壁的内表面突出到通道中的脊。 第二出口围绕管状体的轴线对称地布置，使得第二出口的轴线在通道内相互交叉。