摘要:
A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).
摘要:
A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).
摘要:
A high-efficiency triple-junction thin-film photovoltaic device in which the haze ratio is high and the short-circuit current values obtained from each of the photovoltaic layers are equalized. A thin-film photovoltaic device comprises a transparent electrode layer and three silicon-based photovoltaic layers stacked in sequence on a substrate. The transparent electrode layer has at least one opening formed by an etching treatment that exposes the surface of the substrate, and the haze ratio of the transparent electrode layer relative to light of a broad wavelength region is at least 60%.
摘要:
A multi junction photovoltaic device and an integrated multi junction photovoltaic device, having a two-terminal structure, in which subsequent layers can be stacked under conditions with minimal restrictions imposed by previously stacked layers. Also, processes for producing these photovoltaic devices. A plurality of photovoltaic cells having different spectral sensitivity levels are stacked such that at least the photovoltaic cells (2, 4) at the light-incident end and the opposite end have a conductive thin-film layer (5a, 5d) as the outermost layer that undergoes connection, the remaining photovoltaic cell (3) has conductive thin-film layers (5b, 5c) as the outermost layers that undergo connection, and the outermost layers are bonded via anisotropic conductive adhesive layers (6a, 6b) containing conductive microparticles within a transparent insulating material. The conductive microparticles in the anisotropic conductive adhesive layers (6a, 6b) electrically connect the layers in the stacking direction, and the conductive thin film layers (5a, 5b, 5c, 5d) electrically connect the photovoltaic layers (2, 3, 4) that function as bonding materials in the lateral direction (in-plane direction).
摘要:
A steering lock device has a steering catch mechanism including a handlebar attached to a steering stem, and a locking arm attached to this handlebar and being equipped with a lock pin for engagement on the tip end portion thereof. The steering catch mechanism also includes a locking claw as an engaging portion that is engagable with the lock pin. The locking claw is usually biased in the unlocking direction. In this catch mechanism, the locking claw is disposed on a rotation track of the lock pin. Accordingly, when an external force is applied to the lock pin such that the lock pin is in contact with the locking claw of the catch mechanism, the locking claw is moved in the locking direction so that the locking claw can be engaged with the lock pin. Therefore, a steering-lock stand-by state is accomplished.
摘要:
A method for producing an α-alumina powder is provided. T method for producing an α-alumina powder comprising steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern in the presence of pulverizing agent, (2) mixing the obtained seed crystal with an aluminum salt, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要:
A locking device for a storage box in a vehicle includes a lock configured to place the storage box in a closed state or an open state, and an actuator configured to drive the lock. The locking device further includes a button configured to place the storage box in the open state. The locking device is configured to perform an authentication of a portable key when the button is operated and the storage box is closed. When the portable key is authenticated when the button is operated, the lock is configured to place the storage box in the open state. When the portable key is not authenticated when the button is operated, the storage box is configured to be held in the closed state without the lock being driven. When the portable key is authenticated when the storage box is closed, the lock is configured to be driven to place the storage box in the closed state. When the portable key is not authenticated when the storage box is closed, the storage box is configured to be held in the open state without the lock being driven.
摘要:
The present invention provides a method for producing an α-alumina powder. The method for producing an α-alumina powder comprises steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern, (2) mixing the obtained seed crystal with an aluminum compound, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要:
A method for producing an α-alumina particulate is described. The method for producing an α-alumina particulate comprises steps of (Ia) and (Ib), or a step of (II): (Ia) removing water from a mixture containing water, a seed crystal and a hydrolysate obtained by hydrolysis of an aluminum compound under conditions of a pH of 5 or less and a temperature of 60° C. or less, (Ib) calcining the resulted powder, (II) calcining a mixed powder containing 75-1 wt % of an α-alumina precursor (in terms of Al2O3) and 25-99 wt % of a seed crystal (in terms of oxide of metal component).
摘要翻译:描述了生产α-氧化铝颗粒的方法。 制备α-氧化铝颗粒的方法包括(Ia)和(Ib)的步骤,或(II)的步骤:(Ia)从含有水,晶种和水解产生的水解产物的混合物中除去水 铝化合物,pH为5以下,温度为60℃以下,(Ib)煅烧所得粉末,(II)煅烧含有75〜1重量%的α-氧化铝前体的混合粉末( 以Al 2 O 3 3)和25-99重量%的晶种(以金属成分的氧化物计)。
摘要:
In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis (3c) of rutile crystal (3) is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (10, 11). Furthermore, the focusing central optical axis (6c) of a focusing rod lens (6) is arranged parallel with optical axes of the optical fibers (10, 11) and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (10) and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (11). An air gap (7) of about 200 [μm] is provided, as a heat insulating means, between the focusing rod lens (6) and a magnetized garnet crystal (8).