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公开(公告)号：US20120305081A1
公开(公告)日：2012-12-06
申请号：US13502070
申请日：2010-11-11
申请人： Koichi Mizuno , Yoshiaki Takeuchi , Satoshi Sakai , Shigenori Tsuruga , Takuya Matsui , Michio Kondo , Haijun Jia
发明人： Koichi Mizuno , Yoshiaki Takeuchi , Satoshi Sakai , Shigenori Tsuruga , Takuya Matsui , Michio Kondo , Haijun Jia
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/076 , Y02E10/548
摘要： A high-efficiency triple-junction thin-film photovoltaic device in which the haze ratio is high and the short-circuit current values obtained from each of the photovoltaic layers are equalized. A thin-film photovoltaic device comprises a transparent electrode layer and three silicon-based photovoltaic layers stacked in sequence on a substrate. The transparent electrode layer has at least one opening formed by an etching treatment that exposes the surface of the substrate, and the haze ratio of the transparent electrode layer relative to light of a broad wavelength region is at least 60%.
摘要翻译： 其中雾度比率高并且从每个光伏层获得的短路电流值相等的高效三联薄膜光伏器件。 薄膜光伏器件包括依次层叠在基板上的透明电极层和三个硅基光电层。 透明电极层具有通过使基板的表面露出的蚀刻处理形成的至少一个开口，透明电极层相对于宽波长区域的光的雾度比至少为60％。
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公开(公告)号：US09012256B2
公开(公告)日：2015-04-21
申请号：US13808738
申请日：2011-09-28
申请人： Shinya Nakano , Yoshiaki Takeuchi , Michio Kondo , Takuya Matsui
发明人： Shinya Nakano , Yoshiaki Takeuchi , Michio Kondo , Takuya Matsui
IPC分类号： H01L31/20 , H01L31/18 , H01L31/0376 , H01L31/0747
CPC分类号： H01L31/202 , H01L31/03762 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).
摘要翻译： 一种能够提高具有由p型结晶Ge（基板），i型非晶硅半导体层和n型非晶硅半导体构成的异质结的太阳能电池的发电特性的光电转换装置的制造方法 层。 一种用于制造光电器件（100）的方法，该光电器件（100）包括异质结电池（1），该异质结电池（1）通过将i型非晶硅半导体层（12）和n型非晶硅半导体层（13）依次层叠在基板 p型结晶Ge（11）），该方法包括将表面氧化膜从其中除去的衬底（11）的温度调节到规定温度的PH3曝光处理阶段，然后将衬底置于 真空室，并将衬底暴露于PH3，在暴露于PH3的衬底上沉积i型非晶硅半导体层（12）的i层沉积阶段，沉积n型非晶硅的n层沉积阶段 i型非晶硅半导体层（12）上的半导体层（13），以及在n型非晶硅半导体层的表面上形成电极（2,3,4）的电极形成级，以及背面 表面 的基板（11）。
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公开(公告)号：US20130109130A1
公开(公告)日：2013-05-02
申请号：US13808738
申请日：2011-09-28
申请人： Shinya Nakano , Yoshiaki Takeuchi , Michio Kondo , Takuya Matsui
发明人： Shinya Nakano , Yoshiaki Takeuchi , Michio Kondo , Takuya Matsui
IPC分类号： H01L31/20 , H01L31/0376
CPC分类号： H01L31/202 , H01L31/03762 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (11).
摘要翻译： 一种能够提高具有由p型结晶Ge（基板），i型非晶硅半导体层和n型非晶硅半导体构成的异质结的太阳能电池的发电特性的光电转换装置的制造方法 层。 一种用于制造光电器件（100）的方法，该光电器件（100）包括异质结电池（1），该异质结电池（1）通过将i型非晶硅半导体层（12）和n型非晶硅半导体层（13）依次层叠在基板 p型结晶Ge（11）），该方法包括将表面氧化膜从其中除去的衬底（11）的温度调节到规定温度的PH3曝光处理阶段，然后将衬底置于 真空室，并将衬底暴露于PH3，在暴露于PH3的衬底上沉积i型非晶硅半导体层（12）的i层沉积阶段，沉积n型非晶硅的n层沉积阶段 i型非晶硅半导体层（12）上的半导体层（13），以及在n型非晶硅半导体层的表面上形成电极（2,3,4）的电极形成级，以及背面 表面 的基板（11）。
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4.发明申请MULTI-JUNCTION PHOTOVOLTAIC DEVICE, INTEGRATED MULTI-JUNCTION PHOTOVOLTAIC DEVICE, AND PROCESSES FOR PRODUCING SAME 审中-公开多功能光电器件，多功能多功能照相器件及其制造方法公开(公告)号：US20120152340A1
公开(公告)日：2012-06-21
申请号：US13391971
申请日：2010-06-10
IPC分类号： H01L31/0687 , H01L31/18
CPC分类号： H01L31/043 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A multi junction photovoltaic device and an integrated multi junction photovoltaic device, having a two-terminal structure, in which subsequent layers can be stacked under conditions with minimal restrictions imposed by previously stacked layers. Also, processes for producing these photovoltaic devices. A plurality of photovoltaic cells having different spectral sensitivity levels are stacked such that at least the photovoltaic cells (2, 4) at the light-incident end and the opposite end have a conductive thin-film layer (5a, 5d) as the outermost layer that undergoes connection, the remaining photovoltaic cell (3) has conductive thin-film layers (5b, 5c) as the outermost layers that undergo connection, and the outermost layers are bonded via anisotropic conductive adhesive layers (6a, 6b) containing conductive microparticles within a transparent insulating material. The conductive microparticles in the anisotropic conductive adhesive layers (6a, 6b) electrically connect the layers in the stacking direction, and the conductive thin film layers (5a, 5b, 5c, 5d) electrically connect the photovoltaic layers (2, 3, 4) that function as bonding materials in the lateral direction (in-plane direction).
摘要翻译： 多结光伏器件和集成多结光伏器件，具有双端子结构，其中后续层可以在具有由先前堆叠的层施加的最小限制的条件下堆叠。 另外，制造这些光电器件的方法。 堆叠具有不同光谱灵敏度级别的多个光伏电池，使得至少在光入射端和相对端处的光伏电池（2,4）具有作为最外层的导电薄膜层（5a，5d） 其余的光伏电池（3）具有作为经历连接的最外层的导电薄膜层（5b，5c），并且最外层通过包含导电微粒的各向异性导电粘合剂层（6a，6b） 透明绝缘材料。 各向异性导电粘合剂层（6a，6b）中的导电性微粒在层叠方向上电连接，导电性薄膜层（5a，5b，5c，5d）将光电转换层（2,3,4） 在横向（面内方向）上起粘接材料的作用。
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公开(公告)号：US20110111551A1
公开(公告)日：2011-05-12
申请号：US13003936
申请日：2009-08-18
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/046 , H01L31/0463 , H01L31/0745 , H01L31/077 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置制造方法。 光电转换装置的制造方法包括通过等离子体CVD法在衬底上形成硅光电转换层的步骤。 在光电转换装置的制造方法中，形成光电转换层的步骤包括形成由晶体硅形成的i层的步骤，以及在i层上在条件下形成n层的步骤 氢稀释比为0至10（含）。
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公开(公告)号：US08252668B2
公开(公告)日：2012-08-28
申请号：US13003936
申请日：2009-08-18
IPC分类号： H01L21/205
CPC分类号： H01L31/1804 , H01L31/046 , H01L31/0463 , H01L31/0745 , H01L31/077 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置制造方法。 光电转换装置的制造方法包括通过等离子体CVD法在衬底上形成硅光电转换层的步骤。 在光电转换装置的制造方法中，形成光电转换层的步骤包括形成由晶体硅形成的i层的步骤，以及在i层上在条件下形成n层的步骤 氢稀释比为0至10（含）。
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公开(公告)号：US07802649B2
公开(公告)日：2010-09-28
申请号：US11978725
申请日：2007-10-30
CPC分类号： B62H5/04 , B60R25/0221 , B60R2325/306 , E05B81/14 , G07C9/00309 , G07C2009/00769 , G07C2209/63 , Y10T70/5664 , Y10T70/5872
摘要： A steering lock device has a steering catch mechanism including a handlebar attached to a steering stem, and a locking arm attached to this handlebar and being equipped with a lock pin for engagement on the tip end portion thereof. The steering catch mechanism also includes a locking claw as an engaging portion that is engagable with the lock pin. The locking claw is usually biased in the unlocking direction. In this catch mechanism, the locking claw is disposed on a rotation track of the lock pin. Accordingly, when an external force is applied to the lock pin such that the lock pin is in contact with the locking claw of the catch mechanism, the locking claw is moved in the locking direction so that the locking claw can be engaged with the lock pin. Therefore, a steering-lock stand-by state is accomplished.
摘要翻译： 转向锁定装置具有转向锁定机构，该转向锁定机构包括附接到转向杆的把手和连接到该把手的锁定臂，并且配备有用于在其末端部分上接合的锁定销。 转向锁定机构还包括作为可与锁定销接合的接合部的锁定爪。 锁定爪通常在解锁方向上偏置。 在该止动机构中，锁定爪设置在锁定销的旋转轨道上。 因此，当锁定销与锁定机构的锁定爪接触时，当锁定销被施加外力时，锁定爪在锁定方向上移动，使得锁定爪能够与锁定销接合 。 因此，完成了转向锁待机状态。
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公开(公告)号：US07691362B2
公开(公告)日：2010-04-06
申请号：US11211700
申请日：2005-08-26
IPC分类号： C01F7/02
CPC分类号： B82Y30/00 , C01F7/30 , C01F7/308 , C01P2004/64 , C01P2006/12
摘要： A method for producing an α-alumina powder is provided. T method for producing an α-alumina powder comprising steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern in the presence of pulverizing agent, (2) mixing the obtained seed crystal with an aluminum salt, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要翻译： 提供了α-氧化铝粉末的制造方法。 T制造α-氧化铝粉末的方法，包括以下步骤：（1）以XRD图案粉碎主峰的半峰全宽（Ho）的金属化合物，得到半峰全宽的晶种（ H），（2）将得到的晶种与铝盐混合，（3）煅烧混合物，其中H / Ho比为1.06以上。
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公开(公告)号：US20100077807A1
公开(公告)日：2010-04-01
申请号：US12585550
申请日：2009-09-17
IPC分类号： B65D55/14
CPC分类号： B62J9/001 , B60R11/00 , B60R2011/0075 , B60R2011/0096 , B62K19/46 , E05B81/06 , E05B81/08 , E05B83/32 , Y10T70/554
摘要： A locking device for a storage box in a vehicle includes a lock configured to place the storage box in a closed state or an open state, and an actuator configured to drive the lock. The locking device further includes a button configured to place the storage box in the open state. The locking device is configured to perform an authentication of a portable key when the button is operated and the storage box is closed. When the portable key is authenticated when the button is operated, the lock is configured to place the storage box in the open state. When the portable key is not authenticated when the button is operated, the storage box is configured to be held in the closed state without the lock being driven. When the portable key is authenticated when the storage box is closed, the lock is configured to be driven to place the storage box in the closed state. When the portable key is not authenticated when the storage box is closed, the storage box is configured to be held in the open state without the lock being driven.
摘要翻译： 用于车辆中的存储箱的锁定装置包括锁定构造以将存储箱置于关闭状态或打开状态，以及构造成驱动锁定的致动器。 锁定装置还包括被配置为将存储盒放置在打开状态的按钮。 锁定装置被配置为当按钮被操作并且存储箱关闭时执行便携式钥匙的认证。 当按钮被操作时便携钥匙被认证时，锁被配置成将存储盒置于打开状态。 当按钮被操作时便携式钥匙不被认证时，存储盒被配置成保持在关闭状态而不锁定被驱动。 当便携式密钥在存储盒关闭时被认证时，锁被配置为被驱动以将存储盒放置在关闭状态。 当存储盒关闭时便携式密钥未被认证的情况下，存储盒被配置为保持打开状态而不锁定被驱动。
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公开(公告)号：US20090123363A1
公开(公告)日：2009-05-14
申请号：US12348137
申请日：2009-01-02
申请人： Shinobu Maruno , Hajime Maki , Yoshiaki Takeuchi
发明人： Shinobu Maruno , Hajime Maki , Yoshiaki Takeuchi
IPC分类号： C01F7/02
CPC分类号： B82Y30/00 , C01F7/02 , C01F7/308 , C01F7/442 , C01P2002/72 , C01P2002/74 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： The present invention provides a method for producing an α-alumina powder. The method for producing an α-alumina powder comprises steps of: (1) pulverizing a metal compound having a full width at half maximum (Ho) of a main peak in XRD pattern to obtain a seed crystal having a full width at half maximum (H) of the main peak in XRD pattern, (2) mixing the obtained seed crystal with an aluminum compound, (3) calcining the mixture, and wherein a ratio of H/Ho is 1.06 or more.
摘要翻译： 本发明提供一种生产α-氧化铝粉末的方法。 制造α-氧化铝粉末的方法包括以下步骤：（1）以XRD图案粉碎主峰的半峰全宽（Ho）的金属化合物，得到半峰全宽的晶种（ H），（2）将获得的晶种与铝化合物混合，（3）煅烧混合物，其中H / Ho的比例为1.06以上。
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