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131 条记录 (耗时 0.027 秒)

    Method for manufacturing protrusions
    1.
    发明申请
    Method for manufacturing protrusions 审中-公开
    突起的制造方法

    公开(公告)号：US20060210703A1

    公开(公告)日：2006-09-21

    申请号：US11242941

    申请日：2005-10-05

    申请人： Shoichi Suda ,  Keiji Watanabe ,  Hiroshi Inoue

    发明人： Shoichi Suda ,  Keiji Watanabe ,  Hiroshi Inoue

    IPC分类号： B05D5/12 ,  C08F2/46 ,  B05D5/00 ,  B05D3/12

    CPC分类号： H01J9/20 ,  H01J9/185 ,  H01J2211/36 ,  H01L51/5284

    摘要： Provided are technologies for manufacturing protrusions having various properties better than the conventional technologies. The protrusions are manufactured by the steps comprising: filling a specific composition into slits by means of a squeegee printing method; curing the photosensitive resin in the composition by light exposure to make a cured composition from the composition; and firing the cured composition. These protrusions preferably have a relative dielectric constant of less than 4.0 and a difference in linear expansion coefficient of not more than 4 ppm/° C., based on the linear expansion coefficient of a dielectric layer material for use.

    摘要翻译： 提供了用于制造具有比常规技术更好的各种特性的突起的技术。 这些突起通过以下步骤制造，包括：通过刮刀印刷方法将特定组合物填充到狭缝中; 通过曝光固化组合物中的感光性树脂，从组合物中制备固化的组合物; 并煅烧固化的组合物。 基于使用的电介质层材料的线膨胀系数，这些突起优选具有小于4.0的相对介电常数和不大于4ppm /℃的线性膨胀系数的差异。

    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same
    3.
    发明授权
    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same 有权
    碱溶性硅氧烷聚合物，正型抗蚀剂组合物，抗蚀剂图案，其形成方法，电子器件及其制造方法

    公开(公告)号：US06949324B2

    公开(公告)日：2005-09-27

    申请号：US10329992

    申请日：2002-12-27

    申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    IPC分类号： C08G77/38 ,  C09D183/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

    摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

    摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same
    6.
    发明授权
    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same 有权
    碱溶性硅氧烷聚合物，正型抗蚀剂组合物，抗蚀剂图案，其形成方法，电子器件及其制造方法

    公开(公告)号：US07439010B2

    公开(公告)日：2008-10-21

    申请号：US11124121

    申请日：2005-05-09

    申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/039

    CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

    摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

    摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

    Manufacturing process of a magnetic head, magnetic head, pattern formation method
    8.
    发明授权
    Manufacturing process of a magnetic head, magnetic head, pattern formation method 有权
    磁头制造工艺，磁头，图案形成方法

    公开(公告)号：US07244368B2

    公开(公告)日：2007-07-17

    申请号：US10397832

    申请日：2003-03-27

    申请人： Shoichi Suda ,  Masayuki Takeda ,  Keiji Watanabe

    发明人： Shoichi Suda ,  Masayuki Takeda ,  Keiji Watanabe

    IPC分类号： G11B5/127

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  Y10T29/49052

    摘要： A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

    摘要翻译： 磁头的制造方法包括在磁阻效应元件上形成剥离掩模图案的方法，使得剥离掩模图案的上部的尺寸比下部大，用于形成 使用剥离掩模图案作为掩模的磁阻效应元件上的一对电极，以及去除剥离掩模图案的处理。 根据干蚀刻工艺进行形成剥离掩模图案的工艺。

    Solar cell
    10.
    发明授权
    Solar cell 有权
    太阳能电池

    公开(公告)号：US09257583B2

    公开(公告)日：2016-02-09

    申请号：US14119195

    申请日：2011-05-25

    申请人： Keiji Watanabe ,  Ryuta Tsuchiya ,  Takashi Hattori ,  Mieko Matsumura

    发明人： Keiji Watanabe ,  Ryuta Tsuchiya ,  Takashi Hattori ,  Mieko Matsumura

    IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/0236

    CPC分类号： H01L31/035281 ,  H01L31/02366 ,  H01L31/03529 ,  Y02E10/50

    摘要： A solar cell including a substrate 1, a nanopillar 11 having diameter D1 connected to the substrate 1, and a nanopillar 12 having diameter D2 connected to the substrate 1 is characterized in that D2 is greater than D1 in order to realize a solar cell having, as the surface structure, a nanopillar array structure with which it is possible to prevent reflection within the broad wavelength region of solar light. A nanopillar array structure 21 formed from two types of nanopillars having different diameters has a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 11 having diameter D1 and a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 12 having diameter D2 and therefore, is capable of preventing reflection within the broad wavelength region of solar light.

    摘要翻译： 包括基板1，具有与基板1连接的直径D1的纳米柱11和具有连接到基板1的直径D2的纳米柱12的太阳能电池的特征在于，D2大于D1，以实现太阳能电池， 作为表面结构，可以防止在太阳光的宽波长范围内的反射的纳米柱阵列结构。 由具有不同直径的两种类型的纳米柱形成的纳米柱阵列结构21具有由具有直径D1的纳米柱11形成的纳米柱阵列结构的最小反射率点和由纳米柱12形成的纳米柱阵列结构的最小反射率点， 因此，能够防止太阳光的宽波长范围内的反射。