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    Process for enhancing image quality of backside illuminated image sensor
    1.
    发明授权
    Process for enhancing image quality of backside illuminated image sensor 有权
    用于提高背面照明图像传感器的图像质量的过程

    公开(公告)号：US08815723B2

    公开(公告)日：2014-08-26

    申请号：US13335817

    申请日：2011-12-22

    申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L21/22 ,  H01L27/146

    CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

    摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

    摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面执行离子注入工艺，并对硅衬底的注入后表面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。

    PROCESS FOR ENHANCING IMAGE QUALITY OF BACKSIDE ILLUMINATED IMAGE SENSOR
    3.
    发明申请
    PROCESS FOR ENHANCING IMAGE QUALITY OF BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    用于增强背光照明图像传感器的图像质量的方法

    公开(公告)号：US20130084660A1

    公开(公告)日：2013-04-04

    申请号：US13335817

    申请日：2011-12-22

    申请人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    发明人： Shou Shu Lu ,  Hsun-Ying Huang ,  I-Chang Lin ,  Chia-Chi Hsiao ,  Yung-Cheng Chang

    IPC分类号： H01L21/66 ,  H01L31/02

    CPC分类号： H01L31/1864 ,  H01L22/12 ,  H01L22/20 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698

    摘要： A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

    摘要翻译： 形成图像传感器装置的方法包括在硅衬底的前表面上形成感光区域，并在其上形成图案化的金属层。 此后，该方法还包括对硅衬底的背面进行离子注入工艺，并对硅衬底的注入背面进行绿色激光退火处理。 绿色激光退火工艺使用大于或等于约1100℃的退火温度约100至约400纳秒的持续时间。 在进行绿色激光退火处理之后，在硅衬底的背面进行硅研磨处理。