公开(公告)号：US06211097B1

公开(公告)日：2001-04-03

申请号：US09223398

申请日：1998-12-30

申请人： Shuenn-Jeng Chen ,  Ching-Hsing Hsieh

发明人： Shuenn-Jeng Chen ,  Ching-Hsing Hsieh

IPC分类号： H01L2131

CPC分类号： H01L21/31053 ,  H01L21/31051 ,  H01L21/316 ,  H01L21/31612

摘要： This invention provides a planarization method that solves the microscratch problem caused by chemical-mechanical polishing. This method comprises the following steps: providing a substrate with semiconductor devices, forming a SRO oxide on the substrate, forming a SOG layer on the SRO layer, performing a curing process, performing an implantation process during the curing process, forming an oxide layer on the SRO oxide, and planarizing the oxide layer by CMP. Another SOG layer is formed on the planarized oxide layer, a curing process is performed on the second SOG layer, and a cap oxide layer is formed on the second SOG layer to adjust the thickness of the dielectric layer. This invention can solve conventional problems such as microscratching and metal bridges.

摘要翻译： 本发明提供了解决化学机械抛光引起的微观问题的平面化方法。 该方法包括以下步骤：向衬底提供半导体器件，在衬底上形成SRO氧化物，在SRO层上形成SOG层，进行固化过程，在固化过程中进行注入工艺，形成氧化层 SRO氧化物，并通过CMP平坦化氧化物层。 在平坦化氧化物层上形成另一SOG层，对第二SOG层进行固化处理，在第二SOG层上形成帽氧化层，调整电介质层的厚度。 本发明可以解决诸如显微划线和金属桥的常规问题。

公开(公告)号：US06265298B1

公开(公告)日：2001-07-24

申请号：US09249882

申请日：1999-02-16

申请人： Shuenn-Jeng Chen ,  Ching-Hsing Hsieh ,  Chih-Ching Hsu

发明人： Shuenn-Jeng Chen ,  Ching-Hsing Hsieh ,  Chih-Ching Hsu

IPC分类号： H01L2144

CPC分类号： H01L21/76829 ,  H01L21/76819 ,  H01L21/76826

摘要： An improved method for forming inter-metal dielectrics (IMD) over a semiconductor substrate is provided, wherein a conductive line is formed thereon. A first dielectric layer is formed over the conductive line. A second dielectric layer is formed on the first dielectric layer by a spin-on glass method. A curing treatment with an electron beam having a low energy and a high dosage is performed to cure an upper portion of the second dielectric layer so that a cured third dielectric layer is formed on the second dielectric layer. A fourth dielectric layer is formed on the cured third dielectric layer. A chemical-mechanical polishing process is performed using the cured dielectric layer as a stop layer. A cap layer is formed on the fourth dielectric layer.

摘要翻译： 提供了一种用于在半导体衬底上形成金属间电介质（IMD）的改进方法，其中在其上形成导电线。 在导电线上形成第一介电层。 通过旋涂玻璃法在第一介电层上形成第二介电层。 执行具有低能量和高剂量的电子束的固化处理以固化第二介电层的上部，使得固化的第三介电层形成在第二介电层上。 在固化的第三电介质层上形成第四电介质层。 使用固化的电介质层作为停止层进行化学机械抛光工艺。 在第四电介质层上形成覆盖层。

公开(公告)号：US06664201B2

公开(公告)日：2003-12-16

申请号：US10010865

申请日：2001-12-05

申请人： Jing-Horng Gau ,  Shuenn-Jeng Chen

发明人： Jing-Horng Gau ,  Shuenn-Jeng Chen

IPC分类号： H01L21469

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3145

摘要： An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxynitride deposition, concentration of one of the reactive gases nitrous oxide is gradually reduced so that the graded silicon oxynitride layer is oxygen-rich near bottom but nitrogen-rich near the top.

公开(公告)号：US06421108B1

公开(公告)日：2002-07-16

申请号：US09313516

申请日：1999-05-17

申请人： Wei-Shiau Chen ,  Shuenn-Jeng Chen ,  Tsan-Wen Liu

发明人： Wei-Shiau Chen ,  Shuenn-Jeng Chen ,  Tsan-Wen Liu

IPC分类号： G02F11333

CPC分类号： G02F1/133553 ,  G02F1/13439 ,  H01L21/76801

摘要： A method for fabricating a passivation layer and a liquid crystal display. For the fabrication method, a substrate is provided. An oxide layer, a first silicon nitride layer, a spin-on-glass (SOG) layer, and a second silicon nitride layer are sequentially formed over the substrate. The liquid crystal display has a controller, a dielectric layer, a metal layer, an oxide layer, a first silicon nitride layer, a spin-on-glass layer, and a second silicon nitride layer. The dielectric layer is positioned over the controller. A metal layer is positioned over the dielectric layer. An oxide layer is formed over the metal layer. A first silicon nitride layer is formed over the oxide layer. A spin-on-glass (SOG) layer is formed over the first silicon nitride layer. A second silicon nitride layer is formed over the SOG layer.

摘要翻译： 一种制造钝化层和液晶显示器的方法。 对于制造方法，提供基板。 在衬底上顺序地形成氧化物层，第一氮化硅层，旋涂玻璃（SOG）层和第二氮化硅层。 液晶显示器具有控制器，电介质层，金属层，氧化物层，第一氮化硅层，旋涂玻璃层和第二氮化硅层。 电介质层位于控制器上方。 金属层位于电介质层上。 在金属层上形成氧化物层。 在氧化物层上形成第一氮化硅层。 在第一氮化硅层上形成旋涂玻璃（SOG）层。 在SOG层上形成第二氮化硅层。

公开(公告)号：US06277755B1

公开(公告)日：2001-08-21

申请号：US09466686

申请日：1999-12-20

申请人： Shuenn-Jeng Chen ,  Chih-Ching Hsu

发明人： Shuenn-Jeng Chen ,  Chih-Ching Hsu

IPC分类号： H01L21303

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76822

摘要： A method for fabricating an interconnect structure by a dual damascene process is described, in which a first low dielectric constant material is formed on a substrate, followed by forming a gradient silicon oxy-nitride layer on the first low dielectric constant. A second low dielectric constant layer is further formed on the gradient silicon oxy-nitride layer. A trench line is then formed in the second low dielectric constant material using the gradient silicon oxy-nitride layer as an etch-stop, followed by forming a via under the trench line.

摘要翻译： 描述了通过双镶嵌工艺制造互连结构的方法，其中在衬底上形成第一低介电常数材料，随后在第一低介电常数上形成梯度硅氮化物层。 在梯度硅氮化物层上进一步形成第二低介电常数层。 然后在第二低介电常数材料中使用梯度硅氧氮化物层作为蚀刻停止层形成沟槽线，随后在沟槽线下形成通孔。

公开(公告)号：US08520987B2

公开(公告)日：2013-08-27

申请号：US12709516

申请日：2010-02-22

申请人： Yi-Ching Wu ,  Shuenn-Jeng Chen

发明人： Yi-Ching Wu ,  Shuenn-Jeng Chen

IPC分类号： G02B6/12 ,  H01L21/00

CPC分类号： G02B6/13 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136

摘要： A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material layer in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer.

摘要翻译： 提供一种制造光变换器的方法。 首先提供衬底，其中衬底包括第一区域和第二区域。 然后在基板上形成第一材料层，除去除了第一区域之外的第一材料层的部分。 然后在基板上形成第二材料层，并且去除第一区域和第二区域中的第二材料层的部分。 最后，在基板上形成第一导电层，除去除了第二区域以外的第一导电层的部分，使第一材料层，第二材料层和第一导电层具有相同的高度，使得 第一材料层成为光变换器的一部分。

公开(公告)号：US20110206315A1

公开(公告)日：2011-08-25

申请号：US12709516

申请日：2010-02-22

申请人： Yi-Ching Wu ,  Shuenn-Jeng Chen

发明人： Yi-Ching Wu ,  Shuenn-Jeng Chen

IPC分类号： G02B6/12 ,  H01L33/00

CPC分类号： G02B6/13 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136

摘要： A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer.

摘要翻译： 提供一种制造光变换器的方法。 首先提供衬底，其中衬底包括第一区域和第二区域。 然后在基板上形成第一材料层，除去除了第一区域之外的第一材料层的部分。 然后在基板上形成第二材料层，并且去除第一区域和第二区域中的第二材料的部分。 最后，在基板上形成第一导电层，除去除了第二区域以外的第一导电层的部分，使第一材料层，第二材料层和第一导电层具有相同的高度，使得 第一材料层成为光变换器的一部分。

公开(公告)号：US06670695B1

公开(公告)日：2003-12-30

申请号：US09515811

申请日：2000-02-29

申请人： Jing-Horng Gau ,  Shuenn-Jeng Chen

发明人： Jing-Horng Gau ,  Shuenn-Jeng Chen

IPC分类号： H01L2358

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3145

摘要： An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxynitride deposition, concentration of one of the reactive gases nitrous oxide is gradually reduced so that the graded silicon oxynitride layer is oxygen-rich near bottom but nitrogen-rich near the top.