TREAD FOR WINTER-USE PNEUMATIC TIRES
    1.
    发明申请
    TREAD FOR WINTER-USE PNEUMATIC TIRES 审中-公开
    用于冬季使用的气动轮胎

    公开(公告)号:US20130186533A1

    公开(公告)日:2013-07-25

    申请号:US13819945

    申请日:2010-08-31

    Applicant: Shuichi KANEKO

    Inventor: Shuichi KANEKO

    Abstract: To provide a winter-use pneumatic tire with which the performance on ice can be enhanced and tread pattern durability can be enhanced. The tread for a winter-use pneumatic tire according to the present invention has blocks which are aligned in the circumferential direction and in which are formed respectively at least one thin incision which extends substantially parallel to a circumferential direction edge and which has a widened portion at its bottom, and at least one series of small holes comprising at least two small holes which open in a ground contacting surface of the block and extend in the inward radial direction of the tire, and the at least one series of small holes is formed in a neighboring region of the circumferential direction edge, and is formed in an intermediate portion between the circumferential direction edge and the at least one thin incision.

    Abstract translation: 提供冬季使用的充气轮胎,可以提高冰上的性能并提高胎面花纹耐久性。 根据本发明的用于冬季使用的充气轮胎的胎面具有在圆周方向上对准的块,并且分别形成有至少一个细切口,该切口基本上平行于圆周方向边缘延伸,并且具有加宽部分 其底部,以及包括至少两个小孔的系列小孔,所述至少两个小孔在所述块的地面接触表面中开口并沿所述轮胎的向内径向延伸,并且所述至少一系列小孔形成在 周向方向边缘的相邻区域,并且形成在圆周方向边缘和至少一个薄切口之间的中间部分中。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20090315071A1

    公开(公告)日:2009-12-24

    申请号:US12482060

    申请日:2009-06-10

    CPC classification number: H01L29/7395 H01L29/0653 H01L29/66333

    Abstract: A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.

    Abstract translation: 半导体器件10的制造方法包括在第一导电第一半导体区域的一个主表面上以特定间隔形成多个第二导电第二半导体区域,所述多个第二导电第二半导体区域与第一导电第一半导体区域相对 在所述第二半导体区域的主表面上形成多个所述第一导电第三半导体区域,所述多个所述第一导电第三区域彼此分离,在另一个主表面上以特定间隔形成多个孔,所述另一个主表面 第一半导体区域的一个主表面,多个孔彼此分离,形成一对相邻的第二导电第四半导体区域,其在第一半导体区域内的孔的底部交替连接,并且将 电极内孔。

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