公开(公告)号：US20110090035A1

公开(公告)日：2011-04-21

申请号：US12882480

申请日：2010-09-15

申请人： Shuichi KIKUCHI ,  Fumihito Meguro ,  Yoshiyuki Hatayama

发明人： Shuichi KIKUCHI ,  Fumihito Meguro ,  Yoshiyuki Hatayama

IPC分类号： H01F27/28

CPC分类号： H01F27/2823 ,  H01F17/02 ,  H01F27/2871 ,  H01F37/005 ,  H01F38/14 ,  H01F41/069 ,  H01F41/07 ,  H01F41/084 ,  H01F41/086

摘要： In the winding wire at the winding completion end side, two wires are piled up vertically and wound together from the inner circumferential side towards the outer circumferential side. The winding wire at the winding start end side that has remained on the inner circumferential side is drawn forth from the inner circumferential side to the outer circumferential side so as to form a curve along the flat surface of the coil. In the crossing portions of the winding wire at the winding completion end side and the winding wire at the winding start end side, the two wires of each winding wire are superimposed and caused to cross each other in a state in which the wires are laid down transversely.

摘要翻译： 在绕线完成端侧的绕组线中，两条线垂直堆叠并从内周侧向外周侧缠绕在一起。 保持在内周侧的卷绕起始端侧的卷绕线从内周侧向外周侧拉出，从而沿着线圈的平坦面形成曲线。 在卷绕完成端侧的绕组线和绕组开始端侧的绕组线的交叉部分中，在布线的状态下，各绕组线的两根线叠加并相互交叉 横向

公开(公告)号：US20080079110A1

公开(公告)日：2008-04-03

申请号：US11862365

申请日：2007-09-27

申请人： Shuichi KIKUCHI ,  Shigeaki OKAWA ,  Kiyofumi NAKAYA ,  Shuji TANAKA

发明人： Shuichi KIKUCHI ,  Shigeaki OKAWA ,  Kiyofumi NAKAYA ,  Shuji TANAKA

IPC分类号： H01L27/08

CPC分类号： H01L29/872 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/47 ,  H01L29/861 ,  H01L29/866

摘要： There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes a P-type first anode diffusion layer formed in an N-type epitaxial layer, a second anode diffusion layer which is formed so as to surround the first anode diffusion layer, and which has an impurity concentration lower than that of the first anode diffusion layer, N-type cathode diffusion layers formed in the epitaxial layer, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

摘要翻译： 在肖特基势垒二极管中存在反向漏电流变得过大的问题。 本发明的半导体器件包括形成在N型外延层中的P型第一阳极扩散层，形成为包围第一阳极扩散层的第二阳极扩散层，其杂质浓度较低 比第一阳极扩散层，形成在外延层中的N型阴极扩散层以及形成在第一和第二阳极扩散层上的肖特基势垒金属层。

公开(公告)号：US20120025940A1

公开(公告)日：2012-02-02

申请号：US13032966

申请日：2011-02-23

申请人： Shuichi KIKUCHI ,  Morihiro KURODA

发明人： Shuichi KIKUCHI ,  Morihiro KURODA

IPC分类号： H01F27/28

CPC分类号： H01F27/2871 ,  H01F27/2828 ,  H01F38/14

摘要： A coil is formed by coaxially winding a second winding so as to be in intimate contact with an outer circumferential portion of a first winding wound about a winding shaft axis. In the first winding, one side of a winding wire is wound from an inner circumferential side to an outer circumferential side, the other side of the winding wire is drawn forth from the inner circumferential side to the outer circumferential side, while crossing the one side of the winding wire, and a thickness in a direction of the winding shaft axis in crossing portions of the one side of the winding wire and the other side of the winding wire is equal to a thickness in other portions.

摘要翻译： 通过同轴地缠绕第二绕组形成线圈，以便与围绕绕轴轴线缠绕的第一绕组的外圆周部分紧密接触。 在第一绕组中，绕线的一侧从内周侧向外周侧卷绕，绕线的另一侧从内周侧向外周侧拉出，同时跨越一侧 并且绕组线的一侧和绕组线的另一侧的交叉部分中的卷绕轴的方向上的厚度等于其它部分的厚度。

公开(公告)号：US20130194155A1

公开(公告)日：2013-08-01

申请号：US13755675

申请日：2013-01-31

申请人： Morihiro KURODA ,  Shuichi KIKUCHI

发明人： Morihiro KURODA ,  Shuichi KIKUCHI

IPC分类号： H01Q7/00

CPC分类号： H01Q7/00 ,  H01Q1/2208

摘要： A wireless communication system may include a first coil having at least a function of transmitting signal information, a relay coil, and a second coil having at least a function of receiving the signal information, and satisfying Equation (1): RO1>RO2>RO3, where RO1 represents an outer diameter of the first coil, RO2 represents an outer diameter of the relay coil, and RO3 represents an outer diameter of the second coil, and a small portable device, a housing case for a small portable device, and a communication device for a small portable device to be used in the wireless communication system.

摘要翻译： 无线通信系统可以包括至少具有发送信号信息的功能的第一线圈，具有至少接收信号信息的功能的继电器线圈和第二线圈，并满足等式（1）：RO1> RO2> RO3 ，其中RO1表示第一线圈的外径，RO2表示继电器线圈的外径，RO3表示第二线圈的外径，小型便携式装置，小便携式装置的外壳，以及 用于在无线通信系统中使用的小型便携式设备的通信设备。

公开(公告)号：US20090152627A1

公开(公告)日：2009-06-18

申请号：US11956097

申请日：2007-12-13

申请人： Shuichi KIKUCHI ,  Kiyofumi Nakaya ,  Shuji Tanaka

发明人： Shuichi KIKUCHI ,  Kiyofumi Nakaya ,  Shuji Tanaka

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404

摘要： This invention is directed to offer a MOS transistor that has a high source-drain breakdown BVds, a low on resistance and a high electric current driving capacity. On resistance is lowered by forming an N well layer for lowering on resistance in the drift region. The N well layer is disposed beneath the gate electrode and away from the N well layer with a certain space between them. This space ensures the withstand voltage at the edge of the gate electrode of the drain layer side. Also, the N well layer is formed on the surface of an epitaxial layer in the region that includes a P+L layer. The edge of the N well layer of the drain layer side is located near the edge of the P+L layer of the drain layer side and away from the N well layer. This space makes the expansion of depletion layer from the P+L layer easier, further improving the withstand voltage.

摘要翻译： 本发明旨在提供一种具有高的源极 - 漏极击穿BVds，低导通电阻和高电流驱动能力的MOS晶体管。 通过在漂移区域中形成用于降低导通电阻的N阱层来降低电阻。 N阱层设置在栅电极下方并且远离N阱层之间具有一定的间隔。 该空间确保漏极层侧的栅电极的边缘处的耐受电压。 此外，在包括P + L层的区域中，在外延层的表面上形成N阱层。 漏层侧的N阱层的边缘位于漏极层侧的P + L层的边缘附近并且远离N阱层。 该空间使得P + L层的耗尽层膨胀更加容易，进一步提高了耐压。