公开(公告)号：US09478503B2

公开(公告)日：2016-10-25

申请号：US14389103

申请日：2013-02-28

申请人： Mitsutoshi Makihata ,  Masayoshi Esashi ,  Shuji Tanaka ,  Masanori Muroyama ,  Hirofumi Funabashi ,  Yutaka Nonomura ,  Yoshiyuki Hata ,  Hitoshi Yamada ,  Takahiro Nakayama ,  Ui Yamaguchi

发明人： Mitsutoshi Makihata ,  Masayoshi Esashi ,  Shuji Tanaka ,  Masanori Muroyama ,  Hirofumi Funabashi ,  Yutaka Nonomura ,  Yoshiyuki Hata ,  Hitoshi Yamada ,  Takahiro Nakayama ,  Ui Yamaguchi

IPC分类号： H01L23/552 ,  H01L23/538 ,  B81B7/00 ,  H01L21/78 ,  H01L21/683 ,  H01L21/306 ,  H01L25/18 ,  H01L27/06 ,  H01L25/07 ,  H01L25/16 ,  B81C1/00 ,  H01L25/00 ,  H01L29/06

CPC分类号： H01L23/552 ,  B81B7/008 ,  B81C1/00238 ,  B81C2203/0792 ,  H01L21/3043 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/5386 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L27/0611 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/03

摘要： An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.

摘要翻译： 提供了具有高绝缘公差的集成器件。 在相邻的装置之间设有具有倾斜侧面的凹槽。 当安装电子电路或MEMS装置的一侧是前表面时，由于倾斜表面，凹槽从前表面变窄到后表面。 模具材料（绝缘材料）设置在凹槽内，使得多个装置机械地接合在一起，彼此电绝缘。 形成相邻器件之间形成电导通的线构件沿着沟槽的侧表面和底表面。 为了将线导出到背面，凹槽的底表面具有孔，使得线构件从孔的背面露出。

公开(公告)号：US20150333046A1

公开(公告)日：2015-11-19

申请号：US14389103

申请日：2013-02-28

申请人： Mitsutoshi MAKIHATA ,  Masayoshi ESASHI ,  Shuji TANAKA ,  Masanori MUROYAMA ,  Hirofumi FUNABASHI ,  Yutaka NONOMURA ,  Yoshiyuki HATA ,  Hitoshi YAMADA ,  Takahiro NAKAYAMA ,  Ui YAMAGUCHI

发明人： Mitsutoshi MAKIHATA ,  Masayoshi ESASHI ,  Shuji TANAKA ,  Masanori MUROYAMA ,  Hirofumi FUNABASHI ,  Yutaka NONOMURA ,  Yoshiyuki HATA ,  Hitoshi YAMADA ,  Takahiro NAKAYAMA ,  Ui YAMAGUCHI

IPC分类号： H01L25/16 ,  H01L25/18 ,  H01L21/306 ,  B81B7/00 ,  H01L21/78 ,  H01L21/683 ,  H01L25/07 ,  H01L23/538

CPC分类号： H01L23/552 ,  B81B7/008 ,  B81C1/00238 ,  B81C2203/0792 ,  H01L21/3043 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/5386 ,  H01L25/072 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L27/0611 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/03

摘要： An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.

摘要翻译： 提供了具有高绝缘公差的集成器件。 在相邻的装置之间设有具有倾斜侧面的凹槽。 当安装电子电路或MEMS装置的一侧是前表面时，由于倾斜表面，凹槽从前表面变窄到后表面。 模具材料（绝缘材料）设置在凹槽内，使得多个装置机械地接合在一起，彼此电绝缘。 形成相邻器件之间形成电导通的线构件沿着沟槽的侧表面和底表面。 为了将线导出到背面，凹槽的底表面具有孔，使得线构件从孔的背面露出。

公开(公告)号：US08552469B2

公开(公告)日：2013-10-08

申请号：US11862585

申请日：2007-09-27

申请人： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

发明人： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

IPC分类号： H01L29/66 ,  H01L29/47

CPC分类号： H01L27/0788 ,  H01L27/0255 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/47 ,  H01L29/866 ,  H01L29/872

摘要： There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

摘要翻译： 在肖特基势垒二极管中存在反向漏电流变得过大的问题。 本发明的半导体器件包括形成在N型外延层中的P型第一和第二阳极扩散层，在外延层中形成的N型阴极扩散层，形成在外延层中的P型第三阳极扩散层 以便围绕第一和第二阳极扩散层并朝向阴极扩散层延伸，以及形成在第一和第二阳极扩散层上的肖特基势垒金属层。

公开(公告)号：US20130177492A1

公开(公告)日：2013-07-11

申请号：US13822673

申请日：2011-09-02

申请人： Masayuki Hasegawa ,  Yoichi Tonomura ,  Tohru Kubota ,  Takeshi Aoyama ,  Shuji Tanaka

发明人： Masayuki Hasegawa ,  Yoichi Tonomura ,  Tohru Kubota ,  Takeshi Aoyama ,  Shuji Tanaka

IPC分类号： C01B33/107

CPC分类号： C01B33/10794 ,  C01B33/1071 ,  C01B33/10763 ,  C01B33/10778

摘要： The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.

摘要翻译： 该方法包括氢化步骤（101）和/或氯化步骤（102），杂质转化步骤（103）和纯化步骤（104）的至少三个步骤。 在杂质转化步骤（103）中，添加由通式Ar-R-CHO（Ar;表示取代或未取代的芳基R表示具有两个或更多个碳原子的有机基团）表示的醛化合物以转化 供体杂质和包含在氯硅烷馏出物中的受主杂质转化成高沸点物质。 将供体杂质和受体杂质转化为高沸点物质后的氯硅烷馏出物送至纯化步骤（104）。 在纯化步骤（104）中，通过使用蒸馏塔等获得供体杂质和受体杂质被彻底除去的高纯度氯硅烷，其中高纯度氯硅烷从塔顶返回到系统外部 。

公开(公告)号：US08382919B2

公开(公告)日：2013-02-26

申请号：US12590576

申请日：2009-11-10

申请人： Minoru Umemoto ,  Yoshikazu Todaka ,  Tadashi Suzuki ,  Toshiichi Ota ,  Akihiro Yamashita ,  Shuji Tanaka

发明人： Minoru Umemoto ,  Yoshikazu Todaka ,  Tadashi Suzuki ,  Toshiichi Ota ,  Akihiro Yamashita ,  Shuji Tanaka

IPC分类号： C21D6/00

CPC分类号： C21D7/08 ,  B23B1/00 ,  B23B35/00 ,  B23B2228/44 ,  B23C3/00 ,  B23P9/00 ,  C21D1/06 ,  C21D9/0068 ,  C21D9/08 ,  C21D2201/03 ,  C21D2261/00 ,  Y10T29/49986 ,  Y10T428/12063 ,  Y10T428/12493

摘要： A process of forming an ultrafine crystal layer in a workpiece constituted by a metallic material. The process includes: performing a machining operation on a surface of the workpiece, so as to impart a large local strain to the machined surface of the workpiece, where the machining operation causes the machined surface of the workpiece to be subjected to a plastic working that causes to have large local strain in the form of a true strain of at least one, such that the ultrafine crystal layer is formed in a surface layer portion of the workpiece that defines the machined surface of the workpiece. Also disclosed are a nanocrystal layer forming process, a machine component having the ultrafine crystal layer or the nanocrystal layer, and a machine component producing process of producing the machine component.

摘要翻译： 在由金属材料构成的工件中形成超细晶体层的工序。 该工艺包括：在工件的表面上执行加工操作，以便对加工工件的加工表面施加大的局部应变，其中加工操作使得加工的工件的表面经受塑性加工， 导致具有至少一个真实应变形式的大的局部应变，使得在限定工件的加工表面的工件的表面层部分中形成超细晶体层。 还公开了纳米晶层形成工艺，具有超细晶体层或纳米晶层的机器部件，以及生产该机器部件的机器部件生产方法。

公开(公告)号：US07705399B2

公开(公告)日：2010-04-27

申请号：US11708685

申请日：2007-02-21

申请人： Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya

发明人： Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya

IPC分类号： H01L29/76

CPC分类号： H01L29/7835 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/402 ,  H01L29/66659

摘要： The invention provides a high voltage MOS transistor having a high gate breakdown voltage and a high source/drain breakdown voltage and having a low on-resistance. A gate electrode is formed on an epitaxial silicon layer with a LOCOS film being interposed therebetween. A P-type first drift layer is formed on the left side of the LOCOS film, and a P+-type source layer is disposed on the surface of the epitaxial silicon layer on the right side of the LOCOS film, being opposed to the first drift layer over the gate electrode. A P-type second drift layer is formed by being diffused in the epitaxial silicon layer deeper than the first drift layer, extending from under the first drift layer to under the left side of the LOCOS film. A recess is formed in a bottom portion of the second drift layer under the left end of the LOCOS film.

摘要翻译： 本发明提供具有高栅极击穿电压和高源极/漏极击穿电压并具有低导通电阻的高压MOS晶体管。 栅电极形成在外延硅层上，其中介于其间的LOCOS膜。 在LOCOS膜的左侧形成P型第一漂移层，并且在LOCOS膜的右侧的外延硅层的表面上设置P +型源极层，与第一漂移相对 层上的栅电极。 通过在比第一漂移层更深的外延硅层中扩散P型第二漂移层，从第一漂移层下方延伸到LOCOS膜的左侧。 在LOCOS膜的左端下方的第二漂移层的底部形成凹部。

公开(公告)号：US20090180801A1

公开(公告)日：2009-07-16

申请号：US12350524

申请日：2009-01-08

申请人： Nobuo Kuwabara ,  Hiroyuki Nagashima ,  Shuji Tanaka ,  Hiroshi Ono ,  Ken Amemiya ,  Masahiko Shakuto ,  Toshio Koike ,  Yuji Arai ,  Michiya Okamoto

发明人： Nobuo Kuwabara ,  Hiroyuki Nagashima ,  Shuji Tanaka ,  Hiroshi Ono ,  Ken Amemiya ,  Masahiko Shakuto ,  Toshio Koike ,  Yuji Arai ,  Michiya Okamoto

IPC分类号： G03G15/00

CPC分类号： G03G15/75 ,  G03G21/06 ,  G03G2221/1609

摘要： An electrophotographic photoreceptor includes, a cylindrical photoreceptor pipe; at least one flange which is attached to an opening of one end of the photoreceptor pipe, and which is provided with a shaft part projecting outward from the one end at a shaft center position of the photoreceptor pipe; and an earth member which is arranged to penetrate through the shaft part of the at least one flange, and which is provided on its inward side with at least one first contact part which contacts an inner circumference of the photoreceptor pipe, and on its outward side with a second contact part.

摘要翻译： 电子照相感光体包括：圆柱形感光体管; 至少一个法兰，其连接到感光体管的一端的开口，并且在感光体管的轴中心位置设置有从一端向外突出的轴部; 以及布置成穿过所述至少一个凸缘的轴部分并且在其内侧设置有至少一个接触感光体管的内周的第一接触部分和其外侧的接地部件 具有第二接触部分。

公开(公告)号：US07542712B2

公开(公告)日：2009-06-02

申请号：US11519919

申请日：2006-09-13

申请人： Shuji Tanaka ,  Shinichi Kawahara ,  Yoshiyuki Kimura ,  Hiroshi Hosokawa ,  Yoshio Hattori ,  Takeo Suda ,  Yutaka Takahashi ,  Takatsugu Fujishiro ,  Teruyuki Kasuga ,  Hiroomi Harada ,  Tokuya Ojimi ,  Masato Yanagida ,  Takaaki Tawada ,  Takeshi Tabuchi ,  Naohiro Kumagai ,  Chohtaroh Kataoka ,  Hidemasa Sato

发明人： Shuji Tanaka ,  Shinichi Kawahara ,  Yoshiyuki Kimura ,  Hiroshi Hosokawa ,  Yoshio Hattori ,  Takeo Suda ,  Yutaka Takahashi ,  Takatsugu Fujishiro ,  Teruyuki Kasuga ,  Hiroomi Harada ,  Tokuya Ojimi ,  Masato Yanagida ,  Takaaki Tawada ,  Takeshi Tabuchi ,  Naohiro Kumagai ,  Chohtaroh Kataoka ,  Hidemasa Sato

IPC分类号： G03G21/00

CPC分类号： G03G21/0094 ,  G03G21/181 ,  G03G21/1814 ,  G03G2221/0026

摘要： A process cartridge including an image bearing member; a lubricant applicator, which includes a lubricant application member configured to apply a solid lubricant to the surface of the image bearing member; and a smoothing member configured to smooth the applied solid lubricant, and at least one of a charging device, a developing device and a cleaning device, wherein the amount of the solid lubricant present on a portion of surface of the image bearing member, which is located between the lubricant application member and the smoothing blade, is from 0.11 to 1.2 mg/m2. The smoothing member is preferably a blade having a JIS-A hardness of not less than 79°. The process cartridge is preferably assembled by a method including setting the lubricant smoothing member, the lubricant and the lubricant application member to a housing of the process cartridge; and then setting the image bearing member to the housing.

摘要翻译： 一种处理盒，包括图像承载部件; 润滑剂施加器，其包括构造成将固体润滑剂施加到图像承载部件的表面上的润滑剂施加部件; 以及平滑部件，其构造成使所施加的固体润滑剂平滑，以及充电装置，显影装置和清洁装置中的至少一个，其中存在于图像承载部件的表面的一部分上的固体润滑剂的量 位于润滑剂施加构件和平滑叶片之间的是0.11-1.2mg / m 2。 平滑部件优选是JIS-A硬度不小于79°的刀片。 处理盒优选通过包括将润滑剂平滑件，润滑剂和润滑剂施加构件设置到处理盒的壳体的方法来组装; 然后将图像承载部件设置到壳体。

公开(公告)号：US20090035706A1

公开(公告)日：2009-02-05

申请号：US11922529

申请日：2006-06-15

申请人： Nao Honda ,  Satoshi Mori ,  Shuji Tanaka ,  Masayoshi Esashi

发明人： Nao Honda ,  Satoshi Mori ,  Shuji Tanaka ,  Masayoshi Esashi

IPC分类号： G03F7/20

CPC分类号： F04D29/281 ,  B29C64/106 ,  B29C64/124 ,  B29L2031/7496 ,  B81C99/008 ,  F04D29/023 ,  F05D2230/31 ,  F05D2300/44

摘要： A method for fabricating a micromachine component of resin comprising step (a) of forming a sacrifice layer on a substrate, step (b) of forming at least two photosensitive resin composition layers sequentially on the sacrifice layer, and performing photolithography of each photosensitive resin composition layer to form an air gap portion defining the circumferential edge potion of the micromachine component and an air gap portion where an internal structure of the micromachine component is constituted to form a multilayer structure, step (c) for depositing dry film resist on the multilayer structure of the cured photosensitive resin composition layer, and performing photolithography of the dry film resist layer to form a cured dry film resist layer in which an air gap portion defining the circumferential edge of a shroud layer and an air gap where the structure of the shroud layer is constituted are formed, and step (d) for separating the micromachine component having the multilayer structure of the cured photosensitive resin composition layer and the cured dry film resist layer from the substrate by removing the sacrifice layer.

摘要翻译： 一种用于制造树脂微机械部件的方法，包括在基板上形成牺牲层的步骤（a），在牺牲层上依次形成至少两个感光性树脂组合物层的步骤（b），并对各感光性树脂组合物进行光刻 以形成限定微机械部件的周向边缘部分的气隙部分和构成微机械部件的内部结构以形成多层结构的气隙部分，用于在多层结构上沉积干膜抗蚀剂的步骤（c） 并进行干膜抗蚀剂层的光刻，形成固化的干膜抗蚀剂层，其中限定了护罩层的周缘的气隙部分和护罩层的结构的气隙 形成，并且步骤（d）用于分离具有多层st的微机械部件 通过除去牺牲层从固化的光敏树脂组合物层和固化的干膜抗蚀剂层的结构。

公开(公告)号：US20080013998A1

公开(公告)日：2008-01-17

申请号：US11528635

申请日：2006-09-28

申请人： Naohiro Kumagai ,  Masato Yanagida ,  Shuji Tanaka ,  Takatsugu Fujishiro ,  Hiroomi Harada ,  Takeshi Tabuchi ,  Tokuya Ojimi ,  Chohtaroh Kataoka ,  Takaaki Tawada ,  Shinichi Kawahara ,  Haruji Mizuishi

发明人： Naohiro Kumagai ,  Masato Yanagida ,  Shuji Tanaka ,  Takatsugu Fujishiro ,  Hiroomi Harada ,  Takeshi Tabuchi ,  Tokuya Ojimi ,  Chohtaroh Kataoka ,  Takaaki Tawada ,  Shinichi Kawahara ,  Haruji Mizuishi

IPC分类号： G03G21/00

CPC分类号： G03G21/105 ,  G03G2215/0132 ,  G03G2221/1624

摘要： A powder transport unit for transporting powders includes a transport pipe, a powder transport member, and a regulating member. The transport pipe is curvingly extended. The powder transport member is disposed in an entire length of the transport pipe and rotates in the transport pipe to transport the powders. The regulating member is integrally formed with the transport pipe at a downstream end of the transport pipe, and regulates a length of the powder transport member disposed in the entire length of the transport pipe. The regulating member includes an exit hole to pass through the powders transported by the powder transport member in the transport pipe.

摘要翻译： 用于运输粉末的粉末输送单元包括输送管，粉末输送构件和调节构件。 运输管道弯曲延伸。 粉末输送构件设置在输送管的整个长度上，并在输送管中旋转以输送粉末。 调节构件在输送管的下游端与输送管一体形成，并且调节设置在输送管的整个长度上的粉末输送构件的长度。 调节构件包括出口孔，其通过由输送管道中的粉末输送构件输送的粉末。