公开(公告)号：US07263427B2

公开(公告)日：2007-08-28

申请号：US11352374

申请日：2006-02-13

申请人： Shumpei Hasegawa ,  Takashi Sasaki ,  Haruo Nakayama

发明人： Shumpei Hasegawa ,  Takashi Sasaki ,  Haruo Nakayama

IPC分类号： B60T7/12 ,  G01L23/22

CPC分类号： F02D41/222 ,  F02B77/08 ,  F02D2200/0406 ,  F02D2200/0408 ,  F02D2200/703 ,  F02D2400/08 ,  Y02T10/40

摘要： A failed manifold pressure sensor is identified in a control apparatus having two manifold pressure detecting systems as a failsafe. A first comparing unit outputs an abnormal signal when a difference ΔP between manifold pressures PMa and PMb detected respectively by two sensors is larger than a threshold value DP. A manifold pressure estimating unit estimates the manifold pressure from the engine revolution Ne, a throttle opening PLP, and an atmospheric pressure PAa. The difference calculating unit calculates a difference ΔPMb between the detected manifold pressure PMb and the estimated manifold pressure PMcal. The difference calculating unit calculates a difference ΔPMa between the detected manifold pressure PMa and the estimated manifold pressure PMcal. A second comparing unit compares the difference ΔPMa and the difference ΔPMb in response to the aforementioned abnormal signal. The failed manifold pressure sensor is specified according to which one of the difference ΔPMa and the difference ΔPMb is larger.

摘要翻译： 在具有两个歧管压力检测系统的控制装置中识别故障歧管压力传感器作为故障保护。 当分别由两个传感器检测到的歧管压力PMa和PMb之间的差ΔP大于阈值DP时，第一比较单元输出异常信号。 歧管压力估计单元估计来自发动机转数Ne，节气门开度PLP和大气压力PAa的歧管压力。 差分计算单元计算检测到的歧管压力PMb和估计歧管压力PMcal之间的差值ΔPMb。 差分计算单元计算检测到的歧管压力PMa与估计的歧管压力PMcal之间的差值ΔPMa。 第二比较单元响应于上述异常信号来比较差值DeltaPMa和差值DeltaPMb。 根据差值DeltaPMa和差值DeltaPMb中的哪一个较大来指定故障歧管压力传感器。

公开(公告)号：US20060184308A1

公开(公告)日：2006-08-17

申请号：US11352374

申请日：2006-02-13

申请人： Shumpei Hasegawa ,  Takashi Sasaki ,  Haruo Nakayama

发明人： Shumpei Hasegawa ,  Takashi Sasaki ,  Haruo Nakayama

IPC分类号： G01M15/05

CPC分类号： F02D41/222 ,  F02B77/08 ,  F02D2200/0406 ,  F02D2200/0408 ,  F02D2200/703 ,  F02D2400/08 ,  Y02T10/40

摘要： A failed manifold pressure sensor is identified in a control apparatus having two manifold pressure detecting systems as a failsafe. A first comparing unit outputs an abnormal signal when a difference ΔP between manifold pressures PMa and PMb detected respectively by two sensors is larger than a threshold value DP. A manifold pressure estimating unit estimates the manifold pressure from the engine revolution Ne, a throttle opening PLP, and an atmospheric pressure PAa. The difference calculating unit calculates a difference ΔPMb between the detected manifold pressure PMb and the estimated manifold pressure PMcal. The difference calculating unit calculates a difference ΔPMa between the detected manifold pressure PMa and the estimated manifold pressure PMcal. A second comparing unit compares the difference ΔPMa and the difference ΔPMb in response to the aforementioned abnormal signal. The failed manifold pressure sensor is specified according to which one of the difference ΔPMa and the difference ΔPMb is larger.

摘要翻译： 在具有两个歧管压力检测系统的控制装置中识别故障歧管压力传感器作为故障保护。 当分别由两个传感器检测到的歧管压力PMa和PMb之间的差ΔP大于阈值DP时，第一比较单元输出异常信号。 歧管压力估计单元估计来自发动机转数Ne，节气门开度PLP和大气压力PAa的歧管压力。 差分计算单元计算检测到的歧管压力PMb和估计歧管压力PMcal之间的差值ΔPMb。 差分计算单元计算检测到的歧管压力PMa与估计的歧管压力PMcal之间的差值ΔPMa。 第二比较单元响应于上述异常信号来比较差值DeltaPMa和差值DeltaPMb。 根据差值DeltaPMa和差值DeltaPMb中的哪一个较大来指定故障歧管压力传感器。

公开(公告)号：US5197016A

公开(公告)日：1993-03-23

申请号：US380079

申请日：1989-07-14

申请人： Tai Sugimoto ,  Hideaki Kobayashi ,  Masahiro Shindo ,  Haruo Nakayama

发明人： Tai Sugimoto ,  Hideaki Kobayashi ,  Masahiro Shindo ,  Haruo Nakayama

IPC分类号： G06F17/50

CPC分类号： G06F17/5045 ,  G06F17/5068

摘要： A computer-aided system and method is disclosed for designing an application specific integrated circuit (ASIC) whose intended function is implemented both by a hardware subsystem including hardware elements on the integrated circuit and by a software subsystem including a general purpose microprocessor also on the integrated circuit. The system also generates software instructions for use by the software subsystem. The system utilizes a knowledge based expert system, with a knowledge base extracted from expert ASIC designers, and thus makes it possible for ASIC's to be designed and provided quickly and economically by persons not having the highly specialized skill of an ASIC designer.

摘要翻译： 公开了一种用于设计专用集成电路（ASIC）的计算机辅助系统和方法，其专用功能由包括集成电路上的硬件元件的硬件子系统以及包括通用微处理器的软件子系统 电路。 该系统还生成软件子系统使用的软件指令。 该系统利用基于知识的专家系统，从专家ASIC设计人员提取的知识库，从而使ASIC可以由没有ASIC设计师的高度专业技能的人员快速而经济地设计和提供。

公开(公告)号：US5459346A

公开(公告)日：1995-10-17

申请号：US341265

申请日：1994-11-17

申请人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

发明人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/74 ,  H01L21/762 ,  H01L21/822 ,  H01L21/782 ,  H01L27/12 ,  H01L29/06

CPC分类号： H01L21/8221 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/743 ,  H01L21/76264 ,  H01L21/76272 ,  H01L21/76281

摘要： A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

摘要翻译： 半导体衬底包括基底，形成在基底上的半导体单晶膜，以及高熔点金属膜或高熔点金属合金膜，其设置在半导体单晶膜和 基础。 设置在半导体单晶膜下方的高熔点金属膜可以用作半导体器件中的导体。

公开(公告)号：US5008554A

公开(公告)日：1991-04-16

申请号：US373932

申请日：1989-06-29

申请人： Toshifumi Asakawa ,  Haruo Nakayama

发明人： Toshifumi Asakawa ,  Haruo Nakayama

IPC分类号： G02B6/42 ,  G02B6/43 ,  H01L31/02 ,  H01L31/12 ,  H05K1/18 ,  H05K7/14

CPC分类号： G02B6/43 ,  H01L2224/48091

摘要： An optical signal processing apparatus includes a plurality of plates disposed in parallel at spatial intervals and light LSIs mounted on each of the plates. The transfer of signals in the direction parallel to the surfaces of the plates is performed by lead wires electrically interconnecting the light LSIs. The transfer of signals in the direction normal to the surfaces is performed by the light emitted and received by the light LSIs.

摘要翻译： 光信号处理装置包括以空间间隔平行设置的多个板和安装在每个板上的光LSI。 信号在与板的表面平行的方向上的传送是通过电连接光LSI的引线进行的。 信号沿垂直于表面的方向的传输由光LSI发射和接收的光进行。

公开(公告)号：US4825113A

公开(公告)日：1989-04-25

申请号：US12354

申请日：1987-02-09

申请人： Hirochika Sato ,  Haruo Nakayama ,  Takeshi Uchiyama ,  Yoshihisa Hagami ,  Yoshiro Sato

发明人： Hirochika Sato ,  Haruo Nakayama ,  Takeshi Uchiyama ,  Yoshihisa Hagami ,  Yoshiro Sato

IPC分类号： H04B17/00 ,  G02B6/42 ,  H04B10/00 ,  H04B10/07 ,  H04B10/079 ,  H04B10/2507 ,  H04B10/556 ,  H04L1/24 ,  H04L5/14 ,  H04L7/033 ,  H04L25/06 ,  H04B9/00

CPC分类号： H04B10/40 ,  G02B6/4246 ,  H04L1/24 ,  H04L25/062 ,  H04L25/065 ,  H04L7/033

摘要： A single transmission line bidirectional optical communication system comprising a directional coupler employing a polarizing beam splitter, an optical transmitting circuit for coding the data and converting the coded data into optical signals and outputting said signals, an optical receiving circuit employing a comparator having a function of automatically establishing a threshold for converting optical input signals into electrical signals and then decoding the data, a circuit for detecting the frequency differences between the sending signals and receiving signals, and a line diagnosing circuit.The polarizing beam splitter eliminates a near-end reflected beam, and the optical receiving circuit having a function of automatically establishing a threshold eliminates a remote-end reflected beam. The line diagnosing circuit diagnoses the line condition by comparing the sending frequency and receiving frequency.

摘要翻译： 一种单传输线双向光通信系统，包括采用偏振分束器的定向耦合器，用于对数据进行编码并将编码数据转换为光信号并输出​​所述信号的光发射电路，采用具有以下功能的比较器的光接收电路： 自动建立用于将光输入信号转换为电信号，然后对数据进行解码的阈值，用于检测发送信号和接收信号之间的频率差的电路以及线路诊断电路。 偏振分束器消除了近端反射光束，并且具有自动建立阈值的功能的光接收电路消除了远端反射光束。 线路诊断电路通过比较发送频率和接收频率来诊断线路状况。

公开(公告)号：US5807454A

公开(公告)日：1998-09-15

申请号：US711678

申请日：1996-09-04

申请人： Shun Kawabe ,  Keiichi Sato ,  Daiya Yamashita ,  Haruo Nakayama ,  Koji Shiraishi ,  Keizo Matsumoto

发明人： Shun Kawabe ,  Keiichi Sato ,  Daiya Yamashita ,  Haruo Nakayama ,  Koji Shiraishi ,  Keizo Matsumoto

IPC分类号： B29C70/44 ,  B29D99/00 ,  B64C3/28 ,  B64D15/04 ,  B32B31/00

CPC分类号： B29D99/0028 ,  B29C70/443 ,  B64C3/28 ,  B64D15/04 ,  B29C2791/001 ,  Y02T50/433 ,  Y10T156/1031

摘要： A leading edge structure for an aircraft has an outer wall, an inner wall disposed within the outer wall and including a partition with, the outer wall, the inner wall and the partition jointly defining a hot-air chamber, and a plurality of flow-rectifying fins or disposed in the hot-air chamber and compartmentalizing the hot-air chamber into a plurality of hot-air passages. The outer wall and the flow-rectifying fins are made of a fiber-reinforced synthetic resin and joined to each other by curing. The inner wall and the partition comprise a single component which is made of a fiber-reinforced synthetic resin, and being bonded to the outer wall. Alternatively, the inner wall and the partition are separate from each other and are joined to each other.

摘要翻译： 用于飞行器的前缘结构具有外壁，内壁，其设置在所述外壁内，并且包括与所述外壁，所述内壁和所述隔板共同限定热空气室的隔板， 整流翅片或设置在热空气室中并将热空气室分隔成多个热空气通道。 外壁和整流翅片由纤维增强合成树脂制成，并通过固化彼此接合。 内壁和隔板包括由纤维增强合成树脂制成并且被结合到外壁的单一部件。 或者，内壁和隔板彼此分离并且彼此接合。

公开(公告)号：US5565697A

公开(公告)日：1996-10-15

申请号：US458800

申请日：1995-06-02

申请人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

发明人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/74 ,  H01L21/762 ,  H01L21/822 ,  H01L21/782 ,  H01L27/12 ,  H01L29/06

CPC分类号： H01L21/8221 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/743 ,  H01L21/76264 ,  H01L21/76272 ,  H01L21/76281

摘要： A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

摘要翻译： 半导体衬底包括基底，形成在基底上的半导体单晶膜，以及高熔点金属膜或高熔点金属合金膜，其设置在半导体单晶膜和 基础。 设置在半导体单晶膜下方的高熔点金属膜可以用作半导体器件中的导体。

公开(公告)号：US5173446A

公开(公告)日：1992-12-22

申请号：US715717

申请日：1991-06-13

申请人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

发明人： Toshifumi Asakawa ,  Daisuke Kosaka ,  Haruo Nakayama

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/74 ,  H01L21/762 ,  H01L21/822

CPC分类号： H01L21/743 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/76264 ,  H01L21/8221 ,  H01L21/76272 ,  H01L21/76281 ,  Y10S117/904 ,  Y10S117/905

摘要： A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

摘要翻译： 半导体衬底包括基底，形成在基底上的半导体单晶膜，以及高熔点金属膜或高熔点金属合金膜，其设置在半导体单晶膜和 基础。 设置在半导体单晶膜下方的高熔点金属膜可以用作半导体器件中的导体。