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公开(公告)号：US06822262B2
公开(公告)日：2004-11-23
申请号：US10295882
申请日：2002-11-18
IPC分类号： H01L2904
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。
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公开(公告)号：US06326249B1
公开(公告)日：2001-12-04
申请号：US09139662
申请日：1998-08-25
IPC分类号： H01L2100
CPC分类号： H01L29/78675 , G02F1/13454 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/78603
摘要： A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.
摘要翻译： 一种半导体器件，包括具有绝缘表面层的衬底和在其上形成的半导体薄膜的有源层，其中所述衬底和与衬底接触的绝缘表面层各自具有至少一个凹部，并且所述凹部 通过对半导体薄膜的底涂层进行扁平化处理和热处理来除去部分。
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3.发明授权
公开(公告)号：US6107639A
公开(公告)日：2000-08-22
申请号：US139656
申请日：1998-08-25
IPC分类号： H01L21/20 , H01L21/00 , H01L21/336 , H01L29/04 , H01L29/40 , H01L29/786
CPC分类号： H01L29/78603 , H01L21/3226 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L21/02532 , H01L21/02672
摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 .mu.m or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
摘要翻译： 在石英或半导体基板100上形成用于制造绝缘层104的绝缘膜103.形成在绝缘膜103的表面上的与基板100的凹部101a〜101d对应的凹部105a〜105d。 绝缘膜103被平坦化以形成下部绝缘层104.通过该平坦化处理，距离L1，L2， 。 。 在绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。 下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。 由此，在凹部106a，106b，106d中，可以避免阻止半导体薄膜的晶体生长，并且晶粒边界可以基本消失。
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公开(公告)号：US07297978B2
公开(公告)日：2007-11-20
申请号：US10983782
申请日：2004-11-09
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。
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公开(公告)号：US08384084B2
公开(公告)日：2013-02-26
申请号：US12849964
申请日：2010-08-04
IPC分类号： H01L29/04
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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公开(公告)号：US07326604B2
公开(公告)日：2008-02-05
申请号：US10765952
申请日：2004-01-29
IPC分类号： H01L21/84
CPC分类号： H01L27/1222 , H01L27/1214 , H01L29/04 , H01L29/78609 , H01L29/78675 , H01L29/78696
摘要： In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain side to effectively prevent the short channel effect. Also, since a channel forming region 105 is intrinsic or substantially intrinsic, a high mobility is realized.
摘要翻译： 在具有绝缘表面的衬底106上使用结晶半导体膜的半导体器件中，将杂质局部注入到有源区102中以形成钉扎区104。 钉扎区域104抑制耗尽层从漏极侧的扩展，以有效地防止短沟道效应。 此外，由于沟道形成区域105是固有的或基本上固有的，因此实现高迁移率。
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公开(公告)号：US07307007B2
公开(公告)日：2007-12-11
申请号：US11393764
申请日：2006-03-31
IPC分类号： H01L21/20
CPC分类号： H01L29/78603 , H01L21/02532 , H01L21/02672 , H01L21/3226 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78621
摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
摘要翻译： 用于制造下绝缘层104的绝缘膜103形成在石英或半导体衬底100上。 在绝缘膜103的表面上形成与基板100的凹部101a〜101d对应的凹部105a〜105d。 该绝缘膜103的表面被平坦化以形成下绝缘层104。 通过该平坦化处理，距离L 1，L 2，... 。 。 在下绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。 下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。 由此，在凹部106a，106b，106d中，可以避免阻挡半导体薄膜的晶体生长，并且晶粒边界可以基本消失。
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公开(公告)号：US06495886B1
公开(公告)日：2002-12-17
申请号：US09592936
申请日：2000-06-13
IPC分类号： H01L2701
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译： 在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。 得到的晶体半导体薄膜显示{110}取向。 由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。
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公开(公告)号：US6087679A
公开(公告)日：2000-07-11
申请号：US120290
申请日：1998-07-22
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04 , H01L31/036
CPC分类号： H01L29/78675 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , G02F1/13454 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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公开(公告)号：US07772592B2
公开(公告)日：2010-08-10
申请号：US11984467
申请日：2007-11-19
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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