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    Semiconductor device and method of manufacturing semiconductor device
    1.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US07897483B2

    公开(公告)日：2011-03-01

    申请号：US12339128

    申请日：2008-12-19

    申请人： Shunpei Yamazaki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi

    发明人： Shunpei Yamazaki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits.

    摘要翻译： 目的是通过外部应力减少半导体集成电路的损坏，并增加薄型半导体集成电路的制造成品率。 与单晶半导体衬底分离的单晶半导体层用于半导体集成电路中所包含的半导体元件。 此外，形成为薄形并且设置有半导体集成电路的基板被树脂层覆盖。 在分离工序中，在支撑基板上形成用于分离半导体元件层的槽，在形成有槽的支撑基板上设置树脂层。 之后，将树脂层和支撑基板切割成槽，以分成多个半导体集成电路。

    Semiconductor device and method for manufacturing semiconductor device
    2.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US08507308B2

    公开(公告)日：2013-08-13

    申请号：US13244397

    申请日：2011-09-24

    申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

    摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

    摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20090267173A1

    公开(公告)日：2009-10-29

    申请号：US12404376

    申请日：2009-03-16

    申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    IPC分类号： H01L31/02 ,  H01L21/50

    CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

    摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

    摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08324079B2

    公开(公告)日：2012-12-04

    申请号：US12355069

    申请日：2009-01-16

    申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

    发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

    IPC分类号： H01L21/46

    CPC分类号： H01L31/0232 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1277 ,  H01L27/1462 ,  H01L31/02162 ,  H01L2224/11

    摘要： A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.

    摘要翻译： 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。

    Semiconductor device and method for manufacturing semiconductor device
    6.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US08049292B2

    公开(公告)日：2011-11-01

    申请号：US12404376

    申请日：2009-03-16

    申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

    IPC分类号： H01L31/048

    CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

    摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

    摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

    Semiconductor device and method of manufacturing semiconductor device
    9.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US08227886B2

    公开(公告)日：2012-07-24

    申请号：US12358449

    申请日：2009-01-23

    申请人： Hidekazu Takahashi ,  Yohei Monma ,  Daiki Yamada ,  Takahiro Iguchi ,  Kazuo Nishi

    发明人： Hidekazu Takahashi ,  Yohei Monma ,  Daiki Yamada ,  Takahiro Iguchi ,  Kazuo Nishi

    IPC分类号： H01L31/09

    CPC分类号： H01L31/02162 ,  H01L25/0655 ,  H01L27/14621 ,  H01L27/14643 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits.

    摘要翻译： 目的是通过半导体器件的外部应力来减少裂纹，裂纹和芯片的外观破损。 另一个目的是提高薄半导体器件的制造成品率。 半导体器件包括安装在插入器上的多个半导体集成电路。 所述多个半导体集成电路中的每一个都包括透光基板，所述透光基板在所述侧表面具有台阶，并且所述透光基板的一部分的宽度比所述透光基板的另一部分的宽度窄，当所述光 发送基板在包括该台阶的平面处被分割，包括设置在透光基板的一个表面上的光电转换元件的半导体元件层和覆盖透光基板的另一个表面的彩色透光树脂层和 侧面的一部分。 多色半导体集成电路中的彩色透光树脂层的颜色不同。