Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07476908B2

    公开(公告)日:2009-01-13

    申请号:US11121070

    申请日:2005-05-04

    IPC分类号: H01L29/207 H01L33/00

    摘要: An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.

    摘要翻译: 本发明的一个目的是提供一种发光装置,其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层,形成在第一绝缘层上的第二绝缘层,以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层,栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。

    Light emitting device
    2.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号:US20050258443A1

    公开(公告)日:2005-11-24

    申请号:US11121070

    申请日:2005-05-04

    摘要: An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.

    摘要翻译: 本发明的一个目的是提供一种发光装置,其中发光光谱的变化取决于用于观察发射光的表面的角度。 本发明的发光器件包括形成在衬底上的第一绝缘层,形成在第一绝缘层上的第二绝缘层,以及形成在第二绝缘层上的半导体层。 形成栅极绝缘层以覆盖第二绝缘层和半导体层。 在栅绝缘层上形成栅电极。 形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。 通过第一层间绝缘层,栅极绝缘层和第二绝缘层形成开口。 形成第二层间绝缘层以覆盖第一绝缘层和开口。 在开口上形成发光元件。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体器件及其制造方法

    公开(公告)号:US07947538B2

    公开(公告)日:2011-05-24

    申请号:US12534176

    申请日:2009-08-03

    IPC分类号: H01L21/00

    摘要: It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

    摘要翻译: 本发明的目的是在有限的区域中形成多个元件,以减少用于积分的元件所占据的面积,从而进一步提高分辨率(增加像素数),减小每个显示像素间距,同时小型化, 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外,只要通过改变掩模而不增加处理次数,就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。