公开(公告)号：US5187601A

公开(公告)日：1993-02-16

申请号：US807748

申请日：1991-12-17

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Mitsufumi Codama ,  Takashi Fuki ,  Ichiro Takayama

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Mitsufumi Codama ,  Takashi Fuki ,  Ichiro Takayama

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/134336 ,  G02F1/133512

摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.

摘要翻译： 在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。 以这种方式，形成与不透明电极图案相邻的透明电极的图案。 在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。

公开(公告)号：US5014100A

公开(公告)日：1991-05-07

申请号：US285419

申请日：1988-12-16

申请人： Takeshi Fukada ,  Mitsufumi Codama ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Ichiro Takayama

发明人： Takeshi Fukada ,  Mitsufumi Codama ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Ichiro Takayama

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14665 ,  H04N1/0313

摘要： A contact image sensor for use in facsimile machines is described. A light window is opened through a photosensitive semiconductor film deposited on a glass sustrate. Light rays are passed through the light window, reflected on an original and absorbed by the semiconductor film in order to produce image signals containing visual information of the original. Provided on the light incident side of the semiconductor film is a light blocking electrode which prevents incident light rays from directly entering the semiconductor film therethrough without reflection on the original. The opposing electrode formed on the other side of the semiconductor film is made of a transparent film covering the side surface of the light window. The opposing electrode on the side surface functions to eliminate noise signals caused by undesirable light rays incident through the side surface, which otherwise, would deteriorate the output signals of the image sensor.

公开(公告)号：US5017828A

公开(公告)日：1991-05-21

申请号：US342857

申请日：1989-04-25

申请人： Takeshi Fukada ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Mitsufumi Codama ,  Toru Takayama

发明人： Takeshi Fukada ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Mitsufumi Codama ,  Toru Takayama

IPC分类号： H01L21/205 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/10 ,  H01L31/105 ,  H04N5/335 ,  H04N5/369

CPC分类号： H01L31/1055 ,  H01L27/14643

摘要： An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.

摘要翻译： 一种由具有多个像素的光敏半导体材料制成的改进的图像传感器，每个像素均包括n型半导体层，p型半导体层和设置在n型层和p型层之间的本征半导体层。 n型和p型层由具有高电阻率的半导体材料制成。 n型层和p型层的高电阻率起到防止串扰电流在像素之间通过的作用。

公开(公告)号：US4959533A

公开(公告)日：1990-09-25

申请号：US259522

申请日：1988-10-18

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14623 ,  H01L27/14665 ,  H04N1/0313

摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

公开(公告)号：US5091638A

公开(公告)日：1992-02-25

申请号：US554342

申请日：1990-07-19

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14623 ,  H01L27/14665 ,  H04N1/0313

摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

公开(公告)号：US5103321A

公开(公告)日：1992-04-07

申请号：US283823

申请日：1988-12-13

申请人： Nobumitsu Amachi ,  Toshiji Hamatani ,  Takeshi Fukada ,  Mitsunri Sakama ,  Naoya Sakamoto ,  Mitsufumi Codama

发明人： Nobumitsu Amachi ,  Toshiji Hamatani ,  Takeshi Fukada ,  Mitsunri Sakama ,  Naoya Sakamoto ,  Mitsufumi Codama

IPC分类号： H04N1/19 ,  H04N1/40

CPC分类号： H04N1/40056

摘要： An image sensor is described. The sensor comprises a sensor array and an alternating electric power supply. The frequency of the power supply is selected to be equal to or a multiple of the frequency at which the sensor array is scanned.

公开(公告)号：US4943710A

公开(公告)日：1990-07-24

申请号：US211225

申请日：1988-06-22

申请人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

发明人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

IPC分类号： G06K7/10 ,  H01L27/146 ,  H01L31/105 ,  H04N5/228 ,  H04N5/369

CPC分类号： G06K7/10841 ,  H01L27/14643 ,  H01L31/1055 ,  H04N3/1581 ,  Y10S148/092

摘要： This invention relates to an image sensor and manufacturing method for the same.

摘要翻译： 本发明涉及一种图像传感器及其制造方法。

公开(公告)号：US5017502A

公开(公告)日：1991-05-21

申请号：US468069

申请日：1990-01-22

申请人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

发明人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

IPC分类号： G06K7/10 ,  H01L27/146 ,  H01L31/105 ,  H04N5/228 ,  H04N5/369

CPC分类号： G06K7/10841 ,  H01L27/14643 ,  H01L31/1055 ,  H04N3/1581 ,  Y10S148/092

摘要： Disclosed is a method for producing image sensors having a plurality of sensing elements including the formation of parallel separating grooves by laser irradiation, the filling of the grooves with an insulating film, and the subsequent provision of a groove in the insulating film in a direction diagonal to the parallel grooves for metallization.

公开(公告)号：US5043567A

公开(公告)日：1991-08-27

申请号：US525734

申请日：1990-05-21

申请人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

发明人： Mitsunori Sakama ,  Takeshi Fukada ,  Naoya Sakamoto ,  Nobumitsu Amachi ,  Shigenori Hayashi ,  Takashi Inushima

IPC分类号： G06K7/10 ,  H01L27/146 ,  H01L31/105 ,  H04N5/228 ,  H04N5/369

CPC分类号： G06K7/10841 ,  H01L27/14643 ,  H01L31/1055 ,  H04N3/1581 ,  Y10S148/092

摘要： A method of manufacturing image sensors where (a) a first conductive film of a transparent material is formed over and in contact with a transparent substrate; (b) a photosensitive semiconductor film is formed over and in contact with the film; (c) the first conductive film and the semiconductor film are patterned by laser scribing; (d) a first insulating film is formed over the above films and in contact with the first conductive film and the semiconductor film and portions thereof are removed which are not necessary to define the image sensors in the patterned semiconductor film; (e) a second conductive film is formed over the semiconductor film and the remaining portions of the first insulating film in order to make contact with the semiconductor film; (f) the second conductive film is patterned; (g) a second insulating film is formed over and in contact with the second conductive film; (h) the second insulating film is patterned; and (i) an electrode arrangement is formed for withdrawing electrical signals from the second conductive film through the patterned second insulating film, wherein the patternings of the first conductive film, the second conductive film, and the second insulating film are primarily performed by laser scribing to reduce the fabrication cost of the image sensors.

公开(公告)号：US4945226A

公开(公告)日：1990-07-31

申请号：US263367

申请日：1988-10-27

申请人： Takeshi Fukuda ,  Nobumitsu Amachi ,  Mitsunori Sakama ,  Naoya Sakamoto ,  Shunpei Yamazaki

发明人： Takeshi Fukuda ,  Nobumitsu Amachi ,  Mitsunori Sakama ,  Naoya Sakamoto ,  Shunpei Yamazaki

IPC分类号： H01L31/0248 ,  G09G3/14 ,  H01L27/146 ,  H01L31/02 ,  H03K17/94

CPC分类号： H01L31/02016 ,  H03K17/941

摘要： A photosensing system is described. Light rays to be sensed is incident on a photosensitive semiconductor device which allows much current to pass therethrough during receiving the incident light and which passes a little current when there is no incident light. The current passing through the semiconductor device is accumulated in a suitable storage means. The accumulated charge is detected, in order to judge the existence or the absence of the incident light, a certain time period after the pulsed signal is outputted.

摘要翻译： 描述了感光系统。 要感测的光线入射到光敏半导体器件上，该光敏半导体器件在接收入射光时允许许多电流通过，并且当没有入射光时通过一点电流。 通过半导体器件的电流被积累在合适的存储装置中。 检测出累积电荷，以便在输出脉冲信号之后的某个时间段内判断入射光的存在或不存在。