公开(公告)号：US06635502B1

公开(公告)日：2003-10-21

申请号：US09741358

申请日：2000-12-20

申请人： Si Hyung Cho ,  William Crossley Dautremont-Smith ,  Sun-Yuan Huang ,  Charles H Joyner ,  Ronald Eugene Leibenguth ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

发明人： Si Hyung Cho ,  William Crossley Dautremont-Smith ,  Sun-Yuan Huang ,  Charles H Joyner ,  Ronald Eugene Leibenguth ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/2059 ,  H01S5/2218 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3434

摘要： The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

摘要翻译： 本发明是一种半导体光学器件及其制造方法，其中器件包括具有第一折射率的有源层的有源区和具有第二较低折射率的阻挡区。 在有源屏蔽区域和阻挡区域之间形成具有高于阻挡区域的折射率的半导体层，使得半导体层在未被阻挡区域覆盖的区域中更靠近有源层，以便减小区域之间的差异 有效区域中的有效折射率和阻挡区域的有效折射率。 这样的器件对于泵浦光放大器特别有用，因为可以在保持单模发射的同时实现更大的功率。

公开(公告)号：US06895134B2

公开(公告)日：2005-05-17

申请号：US10007289

申请日：2001-11-10

申请人： Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

发明人： Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

IPC分类号： G02B6/12 ,  G02B6/132 ,  G02B6/42 ,  H01S5/026 ,  H01S5/20 ,  H01S5/50 ,  H01L21/00 ,  H01L29/06

CPC分类号： H01S5/0265 ,  G02B6/132 ,  G02B6/42 ,  G02B2006/12128 ,  H01S5/2077 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/5045

摘要： The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

摘要翻译： 本发明是一种光电子器件及其制造方法，其中在单个半导体衬底上形成至少两个光学器件，每个光学器件包括诸如多量子阱区域的有源区域。 有源器件在空间上分离并通过形成在衬底上的无源波导光学耦合，其提供与有源区域的对接点。 对接接头可以独立于活性区域进行优化，从而提高产量。

公开(公告)号：US06542686B1

公开(公告)日：2003-04-01

申请号：US09648159

申请日：2000-08-25

申请人： Michael Geva ,  Claude Lewis Reynolds, Jr. ,  Lawrence E. Smith

发明人： Michael Geva ,  Claude Lewis Reynolds, Jr. ,  Lawrence E. Smith

IPC分类号： G02B610

CPC分类号： G02B6/132 ,  G02B6/131

摘要： The present invention provides an optoelectronic device and a method of manufacture therefor, that prevents dopant diffusion and controls the dopant concentration therein. The optoelectronic device includes an active region formed over a substrate, and an interface barrier layer and barrier layer located over the active region. The optoelectronic device further includes an upper cladding layer located over the interface barrier layer and the barrier layer. In an exemplary embodiment of the invention, the interface barrier layer is an indium phosphide interface barrier layer and the barrier layer is an indium gallium arsenide phosphide barrier layer.

摘要翻译： 本发明提供一种光电器件及其制造方法，其防止掺杂剂扩散并控制其中的掺杂剂浓度。 光电子器件包括在衬底上形成的有源区，以及位于有源区上方的界面阻挡层和阻挡层。 光电子器件还包括位于界面阻挡层和阻挡层之上的上覆层。 在本发明的示例性实施例中，界面阻挡层是磷化铟界面阻挡层，阻挡层是砷化镓磷化物阻挡层。