公开(公告)号：US06556605B1

公开(公告)日：2003-04-29

申请号：US09515102

申请日：2000-02-29

申请人： Gleb E. Shtengel ,  Utpal Kumar Chakrabarti ,  Charles William Lentz ,  Charles H. Joyner ,  Abdallah Ougazzaden

发明人： Gleb E. Shtengel ,  Utpal Kumar Chakrabarti ,  Charles William Lentz ,  Charles H. Joyner ,  Abdallah Ougazzaden

IPC分类号： H01S500

CPC分类号： H01S5/227 ,  H01S5/2206 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3072

摘要： A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

摘要翻译： 公开了在掺杂区域之间没有原子扩散的台面条状掩埋异质结构半导体激光器及其形成方法。 使用双电介质掩模形成台面条纹。 然后部分蚀刻第一掩模，并且选择性地生长Si掺杂的InP层。 随后蚀刻第一和第二掩模，并形成InP（Zn）覆盖层以及Zn掺杂的InGaAs接触层。 这样，所得结构在InP（Zn）包覆层和InP（Fe）层之间没有接触，并且抑制了掺杂剂原子相互扩散。

公开(公告)号：US06990256B2

公开(公告)日：2006-01-24

申请号：US10175665

申请日：2002-06-20

申请人： John Michael Geary ,  Joseph Michael Freund ,  Frank Stephen Walters ,  Thomas Gordon Beck Mason ,  Charles William Lentz

发明人： John Michael Geary ,  Joseph Michael Freund ,  Frank Stephen Walters ,  Thomas Gordon Beck Mason ,  Charles William Lentz

IPC分类号： G02F1/035 ,  G02F1/03

CPC分类号： G02F1/0356 ,  G02F1/015 ,  G02F2001/0157 ,  G02F2201/16

摘要： An optical modulator includes first and second modulator segments. The first and second modulator segments form an optical signal path for an optical signal. The optical modulator also includes an electrical signal path capable of receiving and carrying a modulation signal, which is applied to the optical signal at the first and second modulation segments to generate a modulated optical signal. An inductive element may be disposed between electrical inputs to the first and second modulator segments. The optical modulator may be an electro-absorption modulator (EAM). The inductive element may be an inductor or a transmission line segment.

公开(公告)号：US06437868B1

公开(公告)日：2002-08-20

申请号：US09429327

申请日：1999-10-28

申请人： David Gerald Coult ,  Duane Donald Wendling ,  Charles William Lentz ,  Bryan Phillip Segner ,  Gustav Edward Derkits ,  Wan-ning Wu ,  Franklin Roy Dietz

发明人： David Gerald Coult ,  Duane Donald Wendling ,  Charles William Lentz ,  Bryan Phillip Segner ,  Gustav Edward Derkits ,  Wan-ning Wu ,  Franklin Roy Dietz

IPC分类号： G01B1106

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G01B11/06 ,  Y10T279/11

摘要： A system for measuring the thickness of a wafer while it is being thinned this disclosed. The system and method provide integrating an optical reflectometer into a common wafer thinning apparatus. Using reflected optical signals from the top and bottom of the wafer, the thickness of the wafer is determined with time based calculations in real-time while thinning is occurring. Once the desired thickness has been reached, the thinning operation is halted. By performing the measurement in-situ, this system and a method prevent scrapping of wafers which are overthinned and the reloading of wafers which are too thick. Since an optical reflectometer is used, the measurement is contactless, and thus prevents possible damage to wafers during measurement.

摘要翻译： 一种用于测量晶片厚度的系统，该系统在该薄膜被薄化时被测量。 该系统和方法提供将光学反射计集成到公共晶片间隔装置中。 使用来自晶片顶部和底部的反射光信号，晶片的厚度由实时的时间计算确定，而发生变薄。 一旦达到所需的厚度，则变薄操作停止。 通过原位进行测量，该系统和一种方法可以防止过度沉淀的晶片的报废和太厚的晶片的重新装载。 由于使用光学反射计，测量是非接触的，因此可以防止在测量期间可能损坏晶片。

公开(公告)号：US06895134B2

公开(公告)日：2005-05-17

申请号：US10007289

申请日：2001-11-10

申请人： Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

发明人： Kenneth Gerard Glogovsky ,  Charles William Lentz ,  Abdallah Ougazzaden ,  Claude Lewis Reynolds, Jr.

IPC分类号： G02B6/12 ,  G02B6/132 ,  G02B6/42 ,  H01S5/026 ,  H01S5/20 ,  H01S5/50 ,  H01L21/00 ,  H01L29/06

CPC分类号： H01S5/0265 ,  G02B6/132 ,  G02B6/42 ,  G02B2006/12128 ,  H01S5/2077 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/5045

摘要： The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

摘要翻译： 本发明是一种光电子器件及其制造方法，其中在单个半导体衬底上形成至少两个光学器件，每个光学器件包括诸如多量子阱区域的有源区域。 有源器件在空间上分离并通过形成在衬底上的无源波导光学耦合，其提供与有源区域的对接点。 对接接头可以独立于活性区域进行优化，从而提高产量。