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公开(公告)号:US4179792A
公开(公告)日:1979-12-25
申请号:US894784
申请日:1978-04-10
申请人: Sidney Marshall , Robert J. Zeto
发明人: Sidney Marshall , Robert J. Zeto
IPC分类号: H01L21/033 , H01L21/28 , H01L21/316 , H01L21/762 , H01L21/86 , B01J17/00
CPC分类号: H01L21/28211 , H01L21/02238 , H01L21/02255 , H01L21/033 , H01L21/28 , H01L21/31662 , H01L21/762 , H01L21/86
摘要: An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.
摘要翻译: 增强型自对准硅栅互补金属氧化物半导体(CMOS)/蓝宝石硅(SOS)结构是通过在高于1大气压和800℃的温度下用干氧生成所有的栅氧化物和氧化物隔离区 至825℃,使用离子注入进行所有掺杂操作和所有掩蔽电介质的等离子体定义。