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公开(公告)号：US11874737B2
公开(公告)日：2024-01-16
申请号：US17715061
申请日：2022-04-07
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/0644 , G06F3/0679 , G06F11/076 , G06F11/0772
Abstract: A selecting bad data column method suitable for a data storage device is provided. The data storage device includes a control unit and a data storage medium. The selecting method performed by the control unit includes: reading written data of each data column as read data; comparing the read data and the written data of each data column to calculate an average number of error bits of each data column; determining whether the average number of error bits of each data column is greater than or equal to a predetermined value; and recording a data column as a bad data column when the average number of error bits of the data column is greater than or equal to the predetermined value. In this way, in order to avoid the problems that the error correction code can't be corrected or the correction capability is excessively consumed.
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公开(公告)号：US11335432B2
公开(公告)日：2022-05-17
申请号：US17037795
申请日：2020-09-30
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
Abstract: A method for selecting bad columns in a data storage medium is provided. The data storage medium is coupled to a control unit, and the data storage medium includes data blocks, wherein each of the data blocks includes columns. The columns are divided into chunks. The method for selecting bad columns in the data storage medium includes following steps. (a) The control unit calculates a number of bad columns in each of the chunks to sorts the chunks, wherein the bad columns are selected from the columns. (b) The control unit sequentially marks or records the bad columns in each of the chunks with bad column groups, wherein a bad column position and a bad column number in each of the chunks are marked or recorded in each of the bad column groups.
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公开(公告)号：US20180314428A1
公开(公告)日：2018-11-01
申请号：US16028891
申请日：2018-07-06
Applicant: SILICON MOTION, INC.
Inventor： Sheng-Yuan Huang , Yu-Ping Chang
IPC: G06F3/06
CPC classification number: G06F3/0604 , G06F3/0619 , G06F3/0644 , G06F3/0679 , G11C29/44 , G11C29/52 , G11C29/76 , G11C29/804 , G11C2029/4402
Abstract: A method for screening bad data columns in a data storage medium comprising a plurality of data columns includes: labeling or recording a plurality of bad data columns as a bad data column group, wherein the bad data columns are selected from the data columns in the data storage medium, each of the bad data column groups labels or records a position and a number of the bad data columns; determining whether the total number of the bad data columns is greater than a total number of the bad data column groups; and if yes, labeling or recording any two bad data columns of the bad data columns spaced apart by P data columns as one of the bad data column groups, wherein P is a positive integer.
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公开(公告)号：US11144223B2
公开(公告)日：2021-10-12
申请号：US16747551
申请日：2020-01-21
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
IPC: G06F3/06
Abstract: A flash memory initialization method executed by a flash memory initialization device to initialize a flash memory device having a flash memory and a flash memory controller includes: determining an acceptable maximum number N of candidate addresses; determining a number M of different capacity sizes; classifying the candidate addresses into M portions; determining a difference value between two address values of any two adjacent addresses among the m-th portion of candidate addresses; determining multiple address values of the m-th portion of candidate addresses according to the difference value; and determining actual addresses of the m-th portion of candidate addresses according to the multiple address values; and controlling the flash memory controller to write the boot up information into at least one storage location corresponding to at least one of the m-th portion of candidate addresses according to the actual addresses.
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公开(公告)号：US10983854B2
公开(公告)日：2021-04-20
申请号：US16598323
申请日：2019-10-10
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
IPC: G06F11/07 , G06F11/10 , G06F12/02 , G06F12/0882 , G11C11/4072 , G11C11/409
Abstract: A memory controller is provided. The memory controller is coupled to a flash memory that includes a plurality of physical blocks, and each physical block includes a plurality of physical pages, and some of the physical pages are defective physical pages. The memory controller includes a processor that is configured to set a total target initialization time for an initialization process of the flash memory. The processor sequentially selects a current physical block from among all the physical blocks to perform the initialization process, and it performs a read operation of the initialization process on the current physical block using a read-operation threshold. In response to the read operation of the current physical block being completed, the processor dynamically adjusts the read-operation threshold of the read operation of the physical blocks, so that the initialization process is completed within the total target initialization time.
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Patent Agency Ranking
公开(公告)号：US10481796B2
公开(公告)日：2019-11-19
申请号：US16028891
申请日：2018-07-06
Applicant: SILICON MOTION, INC.
Inventor： Sheng-Yuan Huang , Yu-Ping Chang
Abstract: A method for screening bad data columns in a data storage medium comprising a plurality of data columns includes: labeling or recording a plurality of bad data columns as a bad data column group, wherein the bad data columns are selected from the data columns in the data storage medium, each of the bad data column groups labels or records a position and a number of the bad data columns; determining whether the total number of the bad data columns is greater than a total number of the bad data column groups; and if yes, labeling or recording any two bad data columns of the bad data columns spaced apart by P data columns as one of the bad data column groups, wherein P is a positive integer.
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公开(公告)号：US11907047B2
公开(公告)日：2024-02-20
申请号：US17715978
申请日：2022-04-08
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
CPC classification number: G06F11/0727 , G06F3/064 , G06F3/0619 , G06F3/0659 , G06F3/0673 , G06F11/076 , G06F11/0772
Abstract: A data storage device, and an error tolerance selecting method thereof which includes: writing data to data blocks of the data storage device; reading written data of the data blocks as read data; comparing the read data and the written data of each data column in the data blocks, and calculating a number of error bits in each chunk including a plurality of data columns accordingly; calculating a difference value between the number of error bits in the chunk and a first threshold value to store the difference value in an error tolerance list; and selecting a largest difference value in the error tolerance list as an error tolerance.
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公开(公告)号：US11543982B2
公开(公告)日：2023-01-03
申请号：US17396786
申请日：2021-08-09
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
Abstract: A flash memory initialization method executed by a flash memory initialization device to initialize a flash memory device having a flash memory and a flash memory controller includes: determining an acceptable maximum number N of candidate addresses; determining a number M of different capacity sizes; classifying the candidate addresses into M portions; determining a difference value between two address values of any two adjacent addresses among the m-th portion of candidate addresses; determining multiple address values of the m-th portion of candidate addresses according to the difference value; and determining actual addresses of the m-th portion of candidate addresses according to the multiple address values; and controlling the flash memory controller to write the boot up information into at least one storage location corresponding to at least one of the m-th portion of candidate addresses according to the actual addresses.
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公开(公告)号：US20210365197A1
公开(公告)日：2021-11-25
申请号：US17396786
申请日：2021-08-09
Applicant: Silicon Motion, Inc.
Inventor： Sheng-Yuan Huang
IPC: G06F3/06
Abstract: A flash memory initialization method executed by a flash memory initialization device to initialize a flash memory device having a flash memory and a flash memory controller includes: determining an acceptable maximum number N of candidate addresses; determining a number M of different capacity sizes; classifying the candidate addresses into M portions; determining a difference value between two address values of any two adjacent addresses among the m-th portion of candidate addresses; determining multiple address values of the m-th portion of candidate addresses according to the difference value; and determining actual addresses of the m-th portion of candidate addresses according to the multiple address values; and controlling the flash memory controller to write the boot up information into at least one storage location corresponding to at least one of the m-th portion of candidate addresses according to the actual addresses.
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公开(公告)号：US20200285572A1
公开(公告)日：2020-09-10
申请号：US16294935
申请日：2019-03-07
Applicant: Silicon Motion Inc.
Inventor： Sheng-Yuan Huang
IPC: G06F12/02 , G06F9/4401 , G06F17/16 , G06F7/58
Abstract: A method used by a flash memory initialization device for writing boot up information into a memory device including a controller and a flash memory includes: generating the boot up information; generating N block indices by calling a random function based on a first seed; generating M page indices for each of the N block indices; combining the M page indices with each of the N block indices to generate M×N candidate row addresses; and writing the boot up information from the flash memory initialization device into the flash memory by controlling the controller to write the boot up information into M pages belonging to at least one block sequentially based on the M×N candidate row addresses.
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