公开(公告)号：US08614924B2

公开(公告)日：2013-12-24

申请号：US13866966

申请日：2013-04-19

Applicant: Silicon Storage Technology Inc.

Inventor： Hieu Van Tran ,  Sakhawat M. Khan

IPC: G11C7/00

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C11/5678 ,  G11C13/0004 ,  G11C16/08 ,  G11C16/24 ,  G11C16/28 ,  G11C27/005 ,  G11C2211/5634

Abstract: A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.

Abstract translation: 为数字多位非易失性存储器集成系统提供高速电压模式感测。 一个实施例具有本地源跟随器阶段，之后是高速公共源级。 另一个实施例具有本地源极跟随器级，之后是高速源极跟随器级。 另一个实施例具有公共源级，之后是源跟随器。 使用自动归零方案。 使用电容感测方案。 描述多级并行操作。

公开(公告)号：US09640263B2

公开(公告)日：2017-05-02

申请号：US14140452

申请日：2013-12-24

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Sakhawat M. Khan

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56 ,  G11C16/08 ,  G11C16/24 ,  G11C16/28 ,  G11C27/00 ,  G11C13/00

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C11/5678 ,  G11C13/0004 ,  G11C16/08 ,  G11C16/24 ,  G11C16/28 ,  G11C27/005 ,  G11C2211/5634

Abstract: A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.

公开(公告)号：US20140198568A1

公开(公告)日：2014-07-17

申请号：US14140452

申请日：2013-12-24

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Sakhawat M. Khan

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C11/5678 ,  G11C13/0004 ,  G11C16/08 ,  G11C16/24 ,  G11C16/28 ,  G11C27/005 ,  G11C2211/5634

Abstract: A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.

Abstract translation: 为数字多位非易失性存储器集成系统提供高速电压模式感测。 一个实施例具有本地源跟随器阶段，之后是高速公共源级。 另一个实施例具有本地源极跟随器级，之后是高速源极跟随器级。 另一个实施例具有公共源级，之后是源跟随器。 使用自动归零方案。 使用电容感测方案。 描述多级并行操作。