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    AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs
    1.
    发明申请
    AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs 审中-公开
    AlxGa（1-x）As衬底，用于红外LED的外延晶片，红外LED，制造Al x Ga（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法以及制造红外LED的方法

    公开(公告)号：US20110049542A1

    公开(公告)日：2011-03-03

    申请号：US12935913

    申请日：2009-05-27

    申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

    发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

    IPC分类号： H01L29/205 ,  H01L33/30 ,  C30B19/12

    CPC分类号： H01L33/0062 ,  C30B19/00 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628

    摘要： The present invention makes available AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics.An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a). In addition, the AlxGa(1-x)As substrate (10a) is further furnished with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

    摘要翻译： 本发明提供了Al x Ga（1-x）As（0＆nlE; x＆nlE; 1）衬底，用于红外LED的外延晶片，红外LED，制造Al x Ga（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法 以及制造红外LED的方法，由此保持高水平的透射率，并且在半导体器件的制造中证明该器件具有优异的特性。 本发明的Al x Ga（1-x）As衬底（10a）是具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 并且在与主表面（11a）相反的一侧具有背面（11b），其特征在于，在Al x Ga（1-x）As层（11）中，后面的Al的量分数x （11b）大于主表面（11a）中的Al的量分数x。 此外，Al x Ga（1-x）As衬底（10a）还具有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

    Compound semiconductor substrate
    4.
    发明授权
    Compound semiconductor substrate 有权
    化合物半导体衬底

    公开(公告)号：US09000567B2

    公开(公告)日：2015-04-07

    申请号：US13473043

    申请日：2012-05-16

    申请人： Kenichi Miyahara ,  Takayuki Nishiura ,  Mitsutaka Tsubokura ,  Shinya Fujiwara

    发明人： Kenichi Miyahara ,  Takayuki Nishiura ,  Mitsutaka Tsubokura ,  Shinya Fujiwara

    IPC分类号： H01L23/58 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

    CPC分类号： H01L21/02052 ,  H01L29/20 ,  H01L29/66462 ,  H01L29/7787

    摘要： An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×1017 cm−3 or less.

    摘要翻译： 本发明的目的是提供一种化合物半导体衬底及其表面处理方法，其中即使在处理过的衬底长时间存储之后，也不会发生电阻值缺陷。 即使化合物半导体基板长时间储存​​，然后在其上形成外延膜，也不会发生电特性缺陷。 根据本发明的半导体衬底是其至少一个主表面经镜面抛光的化合物半导体衬底，镜面抛光表面被含有氢（H），碳（C）和氧（ O），或者其中至少一个主表面被镜面化的化合物半导体衬底，其中在生长温度为550℃的外延膜与化合物半导体衬底之间的界面处的硅（Si）峰浓度 是2×1017cm-3以下。