公开(公告)号：US20110049542A1

公开(公告)日：2011-03-03

申请号：US12935913

申请日：2009-05-27

申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

IPC分类号： H01L29/205 ,  H01L33/30 ,  C30B19/12

CPC分类号： H01L33/0062 ,  C30B19/00 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628

摘要： The present invention makes available AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics.An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a). In addition, the AlxGa(1-x)As substrate (10a) is further furnished with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

摘要翻译： 本发明提供了Al x Ga（1-x）As（0＆nlE; x＆nlE; 1）衬底，用于红外LED的外延晶片，红外LED，制造Al x Ga（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法 以及制造红外LED的方法，由此保持高水平的透射率，并且在半导体器件的制造中证明该器件具有优异的特性。 本发明的Al x Ga（1-x）As衬底（10a）是具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 并且在与主表面（11a）相反的一侧具有背面（11b），其特征在于，在Al x Ga（1-x）As层（11）中，后面的Al的量分数x （11b）大于主表面（11a）中的Al的量分数x。 此外，Al x Ga（1-x）As衬底（10a）还具有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

公开(公告)号：US20110062466A1

公开(公告)日：2011-03-17

申请号：US12921152

申请日：2009-05-27

申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

IPC分类号： H01L33/30 ,  H01L29/205 ,  H01L21/205

CPC分类号： H01L33/02 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/0079

摘要： Affords AlxGa(1-x)As (0≦x≦1) substrates epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior light output characteristics. An AlxGa(1-x)As substrate (10a) as disclosed is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater the amount fraction x of Al in the major surface (11a). The AlxGa(1-x)As substrate (10a) may additionally be provided with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

摘要翻译： 提供用于红外线LED的外延晶片AlxGa（1-x）As（0＆nlE; x＆nlE; 1）衬底，红外LED，制造AlxGa（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法和制造方法 红外LED，由此保持高水平的透射率，并且在半导体器件的制造中，器件被证明具有优异的光输出特性。 所公开的Al x Ga（1-x）As衬底（10a）是配备有具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 其特征在于，在Al x Ga（1-x）As层（11）中，后表面（11b）中的Al的量分数x ）大于主表面（11a）中的Al的量分数x。 Al x Ga（1-x）As衬底（10a）可以另外设置有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

公开(公告)号：US20110042706A1

公开(公告)日：2011-02-24

申请号：US12990646

申请日：2009-05-27

申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

IPC分类号： H01L33/30 ,  H01L29/20 ,  H01L33/46 ,  H01L21/20

CPC分类号： H01L33/02 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/30

摘要： Affords AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics. An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a). In addition, the AlxGa(1-x)As substrate (10a) is further furnished with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

摘要翻译： 提供Al x Ga（1-x）As（0＆nlE; x＆nlE; 1）衬底，用于红外LED的外延晶片，红外LED，制造Al x Ga（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法， 制造红外LED，由此保持高水平的透射率，并且在半导体器件的制造中证明该器件具有优异的特性。 本发明的Al x Ga（1-x）As衬底（10a）是具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 并且在与主表面（11a）相反的一侧具有背面（11b），其特征在于，在Al x Ga（1-x）As层（11）中，后面的Al的量分数x （11b）大于主表面（11a）中的Al的量分数x。 此外，Al x Ga（1-x）As衬底（10a）还具有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

公开(公告)号：US20060237732A1

公开(公告)日：2006-10-26

申请号：US11361144

申请日：2006-02-23

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/10157 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.

摘要翻译： 提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N层3）; 与n型（n型）相比，配置在比GaN衬底1更远的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5） 氮化物半导体衬底层; 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。 此外，从与GaN衬底1的第一主表面相反的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的部分（曲面部分）。

公开(公告)号：US20100120231A1

公开(公告)日：2010-05-13

申请号：US12529073

申请日：2009-02-12

申请人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

发明人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L21/3081 ,  H01S5/0425 ,  H01S5/2086

摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。

公开(公告)号：US07560740B2

公开(公告)日：2009-07-14

申请号：US11361144

申请日：2006-02-23

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/10157 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.

摘要翻译： 提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N 3） 与n型氮化物半导体衬底层相比更远离GaN衬底1设置的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5） 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。 此外，从与GaN衬底1的第一主表面相对的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的截面（曲面部分）。

公开(公告)号：US07547910B2

公开(公告)日：2009-06-16

申请号：US11863220

申请日：2007-09-27

申请人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

发明人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

IPC分类号： H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm−2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0

摘要翻译： 提供了即使在高电流密度下也减小了外部量子效率的半导体发光器件。 在半导体发光装置（11）中，氮化镓覆层（13）的穿透位错密度为1×10 17 cm -2以下。 有源区（17）具有由多个阱层（19）和多个势垒层（21）组成的量子阱结构（17a），并且量子阱结构（17a）被设置为发射具有 在420nm至490nm的波长范围内的峰值波长。 阱层（19）各自包括未掺杂的InXGa1-XN（0

公开(公告)号：US08227279B2

公开(公告)日：2012-07-24

申请号：US12539355

申请日：2009-08-11

申请人： Koji Katayama ,  Hiroyuki Kitabayashi ,  Satoshi Arakawa

发明人： Koji Katayama ,  Hiroyuki Kitabayashi ,  Satoshi Arakawa

IPC分类号： H01L21/00

CPC分类号： H01L21/3081 ,  H01L21/32139

摘要： A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer.

摘要翻译： 提供一种以降低的制造成本制造具有良好特性的半导体元件的方法。 半导体元件的制造方法包括含GaN半导体层形成工序，电极层形成工序，在含GaN半导体层上形成Al膜的工序，形成掩模层的工序， 该蚀刻速率小于Al膜的材料的蚀刻速率，使用该掩模层作为掩模形成脊部的步骤，相对于Al膜的位置退回Al膜的侧壁的位置的步骤 掩模层的侧壁，在脊部的侧表面和掩模层的顶表面上形成保护膜，该保护膜的蚀刻速率小于形成该掩模层的材料的蚀刻速率的材料 Al膜，以及除去Al膜，从而除去掩模层和形成在掩模层的顶表面上的保护膜的一部分的步骤。

公开(公告)号：US07423284B2

公开(公告)日：2008-09-09

申请号：US11362407

申请日：2006-02-24

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/08 ,  H01L39/22 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22

CPC分类号： H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

摘要： A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type AlxGa1-xN layer; a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In this light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from the second main surface, which is the main surface of the GaN substrate opposite from the first main surface. hemispherical projections are formed on the second main surface of the GaN substrate.

摘要翻译： 发光器件包括GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 与n型Al x Ga相比位于更远离GaN衬底的p型Al x Ga 1-x N层， SUB> 1-x N层; 定位在n型Al x Ga 1-x N层和p型Al x x N层之间的多量子阱（MQW） Ga 1-x N层。 在该发光装置中，p型Al x Ga 1-x N层侧被下放，从第二主表面射出光 GaN衬底的与第一主表面相对的主表面。 在GaN衬底的第二主表面上形成半球形突起。

公开(公告)号：US20080023708A1

公开(公告)日：2008-01-31

申请号：US11863220

申请日：2007-09-27

申请人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

发明人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm−2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0

摘要翻译： 提供了即使在高电流密度下也减小了外部量子效率的半导体发光器件。 在半导体发光器件（11）中，氮化镓覆层（13）的穿透位错密度为1×10 -7 cm -2以下。 有源区（17）具有由多个阱层（19）和多个阻挡层（21）组成的量子阱结构（17a），并且量子阱结构（17a）被设置为发射 具有在420nm至490nm的波长范围内的峰值波长的光。 阱层（19）各自包括未掺杂的In 1 X 1 Ga 1-X N（0