摘要:
Provided are a perpendicular magnetic recording medium and a method of manufacturing the same. The perpendicular magnetic recording medium includes: a substrate; a soft magnetic layer formed on the substrate; an underlayer formed on the soft magnetic layer; and a recording layer comprising a plurality of ferromagnetic layers and formed on the underlayer, wherein each of the plurality of ferromagnetic layers has a magnetic anisotropic energy which decreases as distance increases from the underlayer.
摘要:
A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.
摘要:
A method of fabricating a memory device includes forming a magnetic tunnel junction (MTJ) layer on a substrate, the MTJ layer including a first magnetization layer, a second magnetization layer, and a tunnel barrier layer between the first magnetization layer and the second magnetization layer; subsequently forming a plurality of MTJ structures by patterning the MTJ layer; performing an annealing process on at least one of the MTJ layer prior to forming the plurality of MTJ structures and the MTJ structures after forming the plurality of MTJ structures; performing additional steps on the MTJ structures to form a variable resistance memory device including the plurality of MTJ structures; and after performing at least one of the additional steps, performing a magnetic field treatment process on the plurality of MTJ structures, the magnetic field treatment process being performed without simultaneously performing any annealing process.
摘要:
A method of testing a semiconductor device includes respectively applying first to n-th voltages that change according to time to first to n-th semiconductor devices that are substantially same until the first to n-th semiconductor devices break down; calculating first to n-th stresses that define the total amount of stress respectively applied to the first to n-th semiconductor devices until a time when the first to n-th semiconductor devices break down, respectively, after the first to n-th voltages are applied; and calculating lifespan of the first to n-th semiconductor devices by using the first to n-th stresses.