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    Heated chuck for laser thermal processing
    1.
    发明授权
    Heated chuck for laser thermal processing 有权
    加热卡盘用于激光热处理

    公开(公告)号：US07731798B2

    公开(公告)日：2010-06-08

    申请号：US11001954

    申请日：2004-12-01

    申请人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

    发明人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

    IPC分类号： C23C16/00

    CPC分类号： B23K26/703

    摘要： A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.

    摘要翻译： 公开了一种用于在激光热处理（LTP）期间支撑晶片并在晶片上保持恒定背景温度的卡盘。 卡盘包括散热器和加热器模块形式的热质量。 加热器模块与散热器热连通，但是通过绝热层在物理上与其分离。 热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗，而不是由辐射和对流损失。 顶板布置在加热器模块的顶部，支撑要处理的晶片，并提供污染屏障。 加热器模块耦合到电源，其适于向加热器模块提供变化量的功率，以将加热器模块保持在恒定的背景温度，即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。 因此，来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。 在没有激光加热的情况下，根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

    Laser thermal processing with laser diode radiation
    2.
    发明申请
    Laser thermal processing with laser diode radiation 审中-公开
    激光二极管辐射激光热处理

    公开(公告)号：US20090095724A1

    公开(公告)日：2009-04-16

    申请号：US12316013

    申请日：2008-12-09

    申请人： Somit Talwar ,  David A. Markle

    发明人： Somit Talwar ,  David A. Markle

    IPC分类号： B23K26/00

    CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/073 ,  B23K26/0853 ,  B23K2101/40 ,  H01L21/268

    摘要： A method and apparatus for performing laser thermal processing (LTP) using one or more two-dimensional arrays of laser diodes and corresponding one or more LTP optical systems to form corresponding one or more line images. The line images are scanned across a substrate, e.g., by moving the substrate relative to the one or more line images. The apparatus also includes one or more recycling optical systems arranged to re-image reflected annealing radiation back onto the substrate. The use of one or more recycling optical systems greatly improves the heating efficiency and uniformity during LTP.

    摘要翻译： 一种使用一个或多个激光二极管阵列和对应的一个或多个LTP光学系统进行激光热处理（LTP）的方法和装置，以形成对应的一个或多个线图像。 线图像跨基板扫描，例如通过相对于一个或多个线图像移动基板。 该装置还包括一个或多个再循环光学系统，其布置成将反射的退火辐射重新映射回衬底上。 使用一个或多个循环光学系统大大提高了LTP期间的加热效率和均匀性。

    Laser thermal processing with laser diode radiation
    4.
    发明授权
    Laser thermal processing with laser diode radiation 有权
    激光二极管辐射激光热处理

    公开(公告)号：US07763828B2

    公开(公告)日：2010-07-27

    申请号：US10653625

    申请日：2003-09-02

    申请人： Somit Talwar ,  David A. Markle

    发明人： Somit Talwar ,  David A. Markle

    IPC分类号： B23K26/00 ,  B23K26/02

    CPC分类号： B23K26/0604 ,  B23K26/073 ,  B23K2101/40

    摘要： A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.

    摘要翻译： 一种使用激光二极管的二维阵列进行激光热处理（LTP）的方法和装置，以形成跨越衬底扫描的线像。 该装置包括激光二极管的二维阵列，使用柱面透镜阵列在一个平面中准直的辐射，并使用异常远心光学成像系统作为线图像成像到基板上。 该装置还包括用于支撑待处理LTP的衬底的扫描衬底台。 对于给定的衬底材料，激光二极管辐射束以布鲁斯特角度或附近的角度入射到衬底上，并且是线性P偏振的辐射束的波长。 使用二维激光二极管阵列允许将相对较高能量密度的偏振辐射束输送到衬底，从而允许LTP处理具有良好的均匀性，合理短的停留时间，并因此允许相当高的通量。

    Laser thermal processing chuck with a thermal compensating heater module
    5.
    发明授权
    Laser thermal processing chuck with a thermal compensating heater module 有权
    激光热处理卡盘配有热​​补偿加热器模块

    公开(公告)号：US07326877B2

    公开(公告)日：2008-02-05

    申请号：US11002043

    申请日：2004-12-01

    申请人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

    发明人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

    IPC分类号： B23K26/00

    CPC分类号： H01L21/67109 ,  B23K26/10 ,  B23K26/702 ,  B23K26/703 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.

    摘要翻译： 用于支撑半导体衬底并将其保持在基本上恒定的背景温度的Chuck方法和装置，即使在经受空间和时间变化的热负载时。 卡盘包括一个热补偿加热器模块，其具有包含加热元件，芯和碱金属液体/蒸气的密封腔。 该室采用热管原理来均衡模块中的温差。 空间变化的热负荷通过加热器模块的热导率快速地均匀。 从加热器模块的底部散热恒定的热量可以适应热负荷的大的时间变化。 恒定的热损失优选地至少与输入热负荷的最大变化一样大，通过辐射和对流损失的热量较少，因此需要通过电加热元件的热​​输入。 这允许卡盘的温度控制，从而允许基板的温度控制。

    Laser thermal annealing of lightly doped silicon substrates
    6.
    发明授权
    Laser thermal annealing of lightly doped silicon substrates 有权
    轻掺杂硅衬底的激光热退火

    公开(公告)号：US07098155B2

    公开(公告)日：2006-08-29

    申请号：US10762861

    申请日：2004-01-22

    申请人： Somit Talwar ,  David A. Markle

    发明人： Somit Talwar ,  David A. Markle

    IPC分类号： H01L21/324

    CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/60 ,  B23K2101/40 ,  H01L21/2026

    摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

    摘要翻译： 使用在室温基本上不吸收衬底的退火辐射束来进行衬底的激光热退火（LTA）的设备和方法。 该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。 该方法包括将衬底加热到​​长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。

    Laser thermal annealing of lightly doped silicon substrates
    7.
    发明授权
    Laser thermal annealing of lightly doped silicon substrates 有权
    轻掺杂硅衬底的激光热退火

    公开(公告)号：US07879741B2

    公开(公告)日：2011-02-01

    申请号：US11478171

    申请日：2006-06-29

    申请人： Somit Talwar ,  Michael O. Thompson ,  Boris Grek ,  David A. Markle

    发明人： Somit Talwar ,  Michael O. Thompson ,  Boris Grek ,  David A. Markle

    IPC分类号： H01L21/00

    CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/60 ,  H01L21/2026

    摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

    摘要翻译： 使用在室温基本上不吸收衬底的退火辐射束来进行衬底的激光热退火（LTA）的设备和方法。 该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。 该方法包括将衬底加热到​​长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。

    Laser thermal annealing of lightly doped silicon substrates
    8.
    发明授权
    Laser thermal annealing of lightly doped silicon substrates 有权
    轻掺杂硅衬底的激光热退火

    公开(公告)号：US07494942B2

    公开(公告)日：2009-02-24

    申请号：US11481458

    申请日：2006-07-06

    申请人： Somit Talwar ,  David A. Markle

    发明人： Somit Talwar ,  David A. Markle

    IPC分类号： H01L21/477

    CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/60 ,  B23K2101/40 ,  H01L21/2026

    摘要： A method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes preheating a portion of the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the portion of the substrate with the annealing radiation to generate a temperature capable of annealing the portion of the substrate.

    摘要翻译： 使用在室温下基本上不吸收基板的退火辐射束进行基板的激光热退火（LTA）的方法。 该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。 该方法包括将衬底的一部分预热到其中长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底的该部分以产生能够退火衬底部分的温度。