Heated chuck for laser thermal processing
    1.
    发明授权
    Heated chuck for laser thermal processing 有权
    加热卡盘用于激光热处理

    公开(公告)号:US07731798B2

    公开(公告)日:2010-06-08

    申请号:US11001954

    申请日:2004-12-01

    IPC分类号: C23C16/00

    CPC分类号: B23K26/703

    摘要: A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.

    摘要翻译: 公开了一种用于在激光热处理(LTP)期间支撑晶片并在晶片上保持恒定背景温度的卡盘。 卡盘包括散热器和加热器模块形式的热质量。 加热器模块与散热器热连通,但是通过绝热层在物理上与其分离。 热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗,而不是由辐射和对流损失。 顶板布置在加热器模块的顶部,支撑要处理的晶片,并提供污染屏障。 加热器模块耦合到电源,其适于向加热器模块提供变化量的功率,以将加热器模块保持在恒定的背景温度,即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。 因此,来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。 在没有激光加热的情况下,根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

    Laser thermal processing chuck with a thermal compensating heater module
    2.
    发明授权
    Laser thermal processing chuck with a thermal compensating heater module 有权
    激光热处理卡盘配有热​​补偿加热器模块

    公开(公告)号:US07326877B2

    公开(公告)日:2008-02-05

    申请号:US11002043

    申请日:2004-12-01

    IPC分类号: B23K26/00

    摘要: Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.

    摘要翻译: 用于支撑半导体衬底并将其保持在基本上恒定的背景温度的Chuck方法和装置,即使在经受空间和时间变化的热负载时。 卡盘包括一个热补偿加热器模块,其具有包含加热元件,芯和碱金属液体/蒸气的密封腔。 该室采用热管原理来均衡模块中的温差。 空间变化的热负荷通过加热器模块的热导率快速地均匀。 从加热器模块的底部散热恒定的热量可以适应热负荷的大的时间变化。 恒定的热损失优选地至少与输入热负荷的最大变化一样大,通过辐射和对流损失的热量较少,因此需要通过电加热元件的热​​输入。 这允许卡盘的温度控制,从而允许基板的温度控制。

    SHOWERHEAD CONFIGURATIONS FOR PLASMA REACTORS
    3.
    发明申请
    SHOWERHEAD CONFIGURATIONS FOR PLASMA REACTORS 审中-公开
    等离子体反应器的淋浴配置

    公开(公告)号:US20120108072A1

    公开(公告)日:2012-05-03

    申请号:US12916269

    申请日:2010-10-29

    摘要: Apparatus, devices, and methods for increasing the ion energy in a plasma processing devices are provided. In various embodiments, the surface area of a showerhead facing the work piece includes a plurality of features. The plurality of features increases the surface area of the showerhead relative to a flat surface. Increasing the surface area of the showerhead increases the ion energy without increasing the power used to generate the plasma. Increasing the ion energy using such a showerhead allows for the broader application of plasma processes in integrated circuit manufacturing.

    摘要翻译: 提供了用于增加等离子体处理装置中的离子能量的装置,装置和方法。 在各种实施例中,面向工件的喷头的表面积包括多个特征。 多个特征增加了喷头相对于平坦表面的表面积。 增加喷头的表面积可增加离子能量,而不增加用于产生等离子体的功率。 使用这样的喷头来增加离子能量可以在集成电路制造中更广泛地应用等离子体工艺。