摘要:
A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.
摘要:
Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.
摘要:
Apparatus, devices, and methods for increasing the ion energy in a plasma processing devices are provided. In various embodiments, the surface area of a showerhead facing the work piece includes a plurality of features. The plurality of features increases the surface area of the showerhead relative to a flat surface. Increasing the surface area of the showerhead increases the ion energy without increasing the power used to generate the plasma. Increasing the ion energy using such a showerhead allows for the broader application of plasma processes in integrated circuit manufacturing.