Statistical in-process quality control sampling based on product stability through a systematic operation system and method
    2.
    发明授权
    Statistical in-process quality control sampling based on product stability through a systematic operation system and method 有权
    基于产品稳定性的统计过程质量控制采样系统管理操作系统和方法

    公开(公告)号:US06477432B1

    公开(公告)日:2002-11-05

    申请号:US09480269

    申请日:2000-01-11

    IPC分类号: G05B1302

    摘要: A system for managing quality control in a manufacturing plant for processing lots of work in process (WIP) for at least one product, comprises a manufacturing process which includes a manufacturing executive system (MES) which provides inspection data to a statistical process control (SPC) database, and an SPC analyzer for analyzing the inspection data and providing a sampling rate rule output to a sampling rate database. A server supplies the sampling rate rule to the MES. The MES tests a condition as to whether a lot of WIP should be sampled. If the condition is met, then provide an inspect control signal for inspection to the plant for inspecting the lot. If the condition is not met, then branch away from the control signal to provide an alternative control signal to pass on to the next process step in the plant.

    摘要翻译: 一种用于管理制造工厂中用于至少一种产品的处理大量工作(WIP)中的质量控制的系统,包括制造过程,其包括制造执行系统(MES),其向统计过程控制(SPC)提供检查数据 )数据库,以及用于分析检查数据并向采样率数据库提供采样率规则输出的SPC分析器。 服务器将采样率规则提供给MES。 MES测试是否应该抽取大量WIP的条件。 如果满足条件,则提供检查控制信号,以便检查厂房进行检查。 如果不满足条件,则从控制信号分支,以提供替代控制信号,以传递到工厂中的下一个处理步骤。

    Large-sized Front Opening Unified wafer POD
    3.
    发明申请
    Large-sized Front Opening Unified wafer POD 有权
    大型前开口统一晶圆POD

    公开(公告)号:US20130068656A1

    公开(公告)日:2013-03-21

    申请号:US13309727

    申请日:2011-12-02

    IPC分类号: B65D85/00

    CPC分类号: H01L21/67386 H01L21/67379

    摘要: A FOUP (front opening unified pod) is disposed with a plurality of supporting pieces, the positions of which are calibrated to be symmetrical for the supporting pieces to horizontally support wafers in the pod, and with an OHT pad (Overhead Hoist Transport pad), a major function of which is to evenly distribute the weight of the FOUP and the wafers so that the transportation of the FOUP and the wafers by the OHT head can be further stabilized and more weight can be loaded to meet the demands of the process.

    摘要翻译: FOUP(前开口统一的荚)设置有多个支撑件,其位置被校准为对于支撑件对称以水平地支撑荚壳中的晶片,并且具有OHT垫(架空起重机输送垫), 其主要功能是均匀分配FOUP和晶片的重量,使得通过OHT头的FOUP和晶片的输送可以进一步稳定,并且可以加载更多的重量以满足该过程的要求。

    SPINNER AND METHOD OF CLEANING SUBSTRATE USING THE SPINNER
    5.
    发明申请
    SPINNER AND METHOD OF CLEANING SUBSTRATE USING THE SPINNER 审中-公开
    旋转器和使用旋转器清洁基板的方法

    公开(公告)号:US20100163078A1

    公开(公告)日:2010-07-01

    申请号:US12347433

    申请日:2008-12-31

    IPC分类号: B08B7/04 B08B3/02

    CPC分类号: B08B3/022 H01L21/67051

    摘要: A method includes spinning a semiconductor wafer about an axis normal to a major surface of the wafer. The wafer is translated in a direction parallel to the major surface with an oscillatory motion, while spinning the wafer. A material is sprayed from first and second nozzles or orifices at respective first and second locations on the major surface of the wafer simultaneously while spinning the wafer and translating the wafer.

    摘要翻译: 一种方法包括围绕与晶片的主表面垂直的轴旋转半导体晶片。 在旋转晶片的同时,使晶片在与主表面平行的方向上以振荡的方式平移。 在旋转晶片并平移晶片的同时,在晶片的主表面上的相应的第一和第二位置处的第一和第二喷嘴或孔口喷射材料。

    Large-sized front opening unified wafer POD
    6.
    发明授权
    Large-sized front opening unified wafer POD 有权
    大尺寸前开口统一晶圆POD

    公开(公告)号:US08794444B2

    公开(公告)日:2014-08-05

    申请号:US13309727

    申请日:2011-12-02

    IPC分类号: B65D85/30

    CPC分类号: H01L21/67386 H01L21/67379

    摘要: A FOUP (front opening unified pod) is disposed with a plurality of supporting pieces, the positions of which are calibrated to be symmetrical for the supporting pieces to horizontally support wafers in the pod, and with an OHT pad (overhead hoist transport pad), a major function of which is to evenly distribute the weight of the FOUP and the wafers so that the transportation of the FOUP and the wafers by the OHT head can be further stabilized and more weight can be loaded to meet the demands of the process.

    摘要翻译: FOUP(前开口统一吊舱)设置有多个支撑件,其位置被校准为对于支撑件对称以水平地支撑吊舱中的晶片,以及使用OHT垫(顶部起重运输垫), 其主要功能是均匀分配FOUP和晶片的重量,使得通过OHT头的FOUP和晶片的输送可以进一步稳定,并且可以加载更多的重量以满足该过程的要求。

    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT USING SUPERCRITICAL FLUIDS
    7.
    发明申请
    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT USING SUPERCRITICAL FLUIDS 审中-公开
    使用超临界流体清洁半导体器件制造设备的方法和装置

    公开(公告)号:US20100126531A1

    公开(公告)日:2010-05-27

    申请号:US12277839

    申请日:2008-11-25

    IPC分类号: B08B3/08 B08B3/10 B08B13/00

    CPC分类号: B08B7/0021 B08B3/08 B08B3/10

    摘要: A process of cleaning a semiconductor device fabrication equipment is provided. In one embodiment, the semiconductor device fabrication equipment is placed in a chamber; a fluid is introduced into the chamber; a pressure and temperature of the fluid is controlled to bring the fluid to a supercritical state; the semiconductor device fabrication equipment is cleaned by having the supercritical fluid contact the semiconductor device fabrication equipment; the supercritical fluid is removed from the chamber; and the semiconductor device fabrication equipment is removed from the chamber.

    摘要翻译: 提供了一种清洁半导体器件制造设备的过程。 在一个实施例中,将半导体器件制造设备放置在腔室中; 将流体引入室中; 控制流体的压力和温度使流体达到超临界状态; 通过使超临界流体与半导体器件制造设备接触来清洁半导体器件制造设备; 将超临界流体从腔室中取出; 并且半导体器件制造设备从腔室中移除。

    Optical proximity correction (OPC) method for improving lithography process window
    8.
    发明授权
    Optical proximity correction (OPC) method for improving lithography process window 有权
    光学邻近校正(OPC)方法,用于改进光刻工艺窗口

    公开(公告)号:US06194104B1

    公开(公告)日:2001-02-27

    申请号:US09414923

    申请日:1999-10-12

    申请人: Tzu-Jeng Hsu

    发明人: Tzu-Jeng Hsu

    IPC分类号: G03F900

    CPC分类号: G03F7/70441 G03F1/36

    摘要: A method is described for applying Optical Proximity Correction to corners and line ends in a pattern having critical dimensions in the sub micron region. Segments of curves are used to approximate corners and line ends in a pattern. The normal vector to the curve and area vector are then determined for all points on the segment of the curve used to approximate the pattern feature. The area vector has the same direction as the normal vector and a magnitude equal to the distance between the curve and the undistorted pattern. An optical proximity correction vector is then determined as the sum of a first scaler function multiplied by the unit normal vector and a second scaler function multiplied by the area vector. Next an optimum optical proximity correction shape is determined by moving the curve a distance and direction equal to the optical proximity correction vector. The optimum proximity correction shape is then approximated using regular geometric shapes, rectangles and triangles, to form an optical proximity corrected pattern. A mask of the optical proximity corrected pattern can be formed using electron beam methods without requiring excessive electron beam time.

    摘要翻译: 描述了一种将光学邻近校正应用于具有亚微米区域中的关键尺寸的图案的角部和线端的方法。 曲线段用于近似图形中的角和线端。 然后,对于用于近似图案特征的曲线段上的所有点,确定曲线和面积向量的法向量。 区域向量具有与法向量相同的方向,并且其幅度等于曲线与未失真模式之间的距离。 然后将光学邻近校正矢量确定为乘以单位法线矢量的第一缩放函数和乘以面积矢量的第二缩放函数的和。 接下来,通过将曲线移动等于光学邻近校正矢量的距离和方向来确定最佳光学邻近校正形状。 然后使用规则几何形状,矩形和三角形近似最佳邻近校正形状,以形成光学邻近校正图案。 可以使用电子束法形成光学接近校正图案的掩模,而不需要过多的电子束时间。