公开(公告)号：US20210026601A1

公开(公告)日：2021-01-28

申请号：US17040959

申请日：2019-03-15

申请人： Sony Corporation ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Toshiyuki Kobayashi ,  Rui Morimoto ,  Jun Okuno ,  Masanori Tsukamoto ,  Yusuke Shuto

IPC分类号： G06F7/544 ,  H01L27/1159 ,  H01L27/11592 ,  H01L29/78 ,  H01L45/00 ,  G11C11/22 ,  G06N3/08

摘要： [Problem] Provided are a semiconductor device and a multiply-accumulate operation device that enable integration at a higher density by further reducing a mounting area per synapse.
[Solution] A semiconductor device including: a plurality of synapses in which a nonvolatile variable resistance element taking a first resistance value and a second resistance value lower than the first resistance value and a fixed resistance element having a resistance value higher than the second resistance value are connected in series; and an output line that outputs a sum of currents flowing through the plurality of synapses. [Selected Drawing] FIG. 3

公开(公告)号：US09941314B2

公开(公告)日：2018-04-10

申请号：US14898942

申请日：2014-06-23

申请人： SONY CORPORATION

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14656 ,  H04N5/3696

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

公开(公告)号：US11972229B2

公开(公告)日：2024-04-30

申请号：US17040959

申请日：2019-03-15

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： Toshiyuki Kobayashi ,  Rui Morimoto ,  Jun Okuno ,  Masanori Tsukamoto ,  Yusuke Shuto

IPC分类号： G06F7/544 ,  G06G7/16 ,  G11C11/22 ,  H01L29/78 ,  H10B51/30

CPC分类号： G06F7/5443 ,  G06G7/16 ,  G11C11/223 ,  H01L29/78391 ,  H10B51/30

摘要： Semiconductor devices and multiply-accumulate operation devices are disclosed. In one example, a semiconductor device includes synapses in which a nonvolatile variable resistance element taking a first resistance value and a second resistance value lower than the first resistance value and a fixed resistance element having a resistance value higher than the second resistance value are connected in series. An output line outputs a sum of currents flowing through the plurality of synapses.

公开(公告)号：US10998356B2

公开(公告)日：2021-05-04

申请号：US16719731

申请日：2019-12-18

申请人： Sony Corporation

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N9/04 ,  H04N5/232

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

公开(公告)号：US20190148426A1

公开(公告)日：2019-05-16

申请号：US16244386

申请日：2019-01-10

申请人： Sony Corporation

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

公开(公告)号：US20210217791A1

公开(公告)日：2021-07-15

申请号：US17217029

申请日：2021-03-30

申请人： Sony Corporation

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N9/04 ,  H04N5/232

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

公开(公告)号：US11004902B2

公开(公告)日：2021-05-11

申请号：US16306033

申请日：2017-04-24

申请人： SONY CORPORATION

发明人： Minoru Ikarashi ,  Seiji Nonoguchi ,  Takeyuki Sone ,  Hiroaki Sei ,  Kazuhiro Ohba ,  Jun Okuno

IPC分类号： G11C13/00 ,  H01L27/24 ,  H01L45/00 ,  H01L27/105 ,  H01L49/00 ,  H01L21/8239

摘要： Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

公开(公告)号：US10559609B2

公开(公告)日：2020-02-11

申请号：US16244386

申请日：2019-01-10

申请人： Sony Corporation

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.

公开(公告)号：US20130341684A1

公开(公告)日：2013-12-26

申请号：US13972351

申请日：2013-08-21

申请人： Sony Corporation

发明人： Taketo Fukuro ,  Jun Okuno

IPC分类号： H01L27/148

CPC分类号： H01L27/14887 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14689

摘要： A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.

摘要翻译： 一种固体摄像器件，包括半导体衬底; 半导体衬底中的光电转换区域，其响应于入射到其上的光而产生电荷; 电荷保持区域，并且能够保持蓄积在光电转换区域中的电荷，直到电荷从电荷保持区域读出; 使在光电转换区域产生的电荷转移到电荷保持区域的转移门; 在所述传输门的上表面上的遮光膜; 以及在所述基板上以及所述半导体基板和所述遮光膜之间的绝缘层，其中，所述光电转换区域上的所述绝缘层的一部分比不在所述光电转换区域上的绝缘层更薄地形成。

公开(公告)号：US11621285B2

公开(公告)日：2023-04-04

申请号：US17217029

申请日：2021-03-30

申请人： Sony Corporation

发明人： Jun Okuno ,  Kazuyoshi Yamashita

IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N9/04 ,  H04N5/232

摘要： The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light. The phase difference detection pixel is formed in a manner that at least part of at least one of the photoelectric conversion unit and the charge accumulation unit refrains from being shielded from light. The present technology can be applied to, for example, a CMOS image sensor.