公开(公告)号：US20130256622A1

公开(公告)日：2013-10-03

申请号：US13848996

申请日：2013-03-22

Applicant: SONY CORPORATION

Inventor： Hiroaki Sei ,  Kazuhiro Ohba ,  Takeyuki Sone ,  Minoru Ikarashi

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包括硫属元素，氧和选自元素周期表第4,5,6族元素中的一种或多种过渡金属元素。

公开(公告)号：US11004902B2

公开(公告)日：2021-05-11

申请号：US16306033

申请日：2017-04-24

Applicant: SONY CORPORATION

Inventor： Minoru Ikarashi ,  Seiji Nonoguchi ,  Takeyuki Sone ,  Hiroaki Sei ,  Kazuhiro Ohba ,  Jun Okuno

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00 ,  H01L27/105 ,  H01L49/00 ,  H01L21/8239

Abstract: Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

公开(公告)号：US10971685B2

公开(公告)日：2021-04-06

申请号：US15545923

申请日：2016-01-08

Applicant: SONY CORPORATION

Inventor： Kazuhiro Ohba ,  Minoru Ikarashi

IPC: H01L45/00 ,  H01L27/105 ,  H01L27/24 ,  H01L49/02 ,  H01L27/22

Abstract: A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series.

公开(公告)号：US09466791B2

公开(公告)日：2016-10-11

申请号：US13848996

申请日：2013-03-22

Applicant: Sony Corporation

Inventor： Hiroaki Sei ,  Kazuhiro Ohba ,  Takeyuki Sone ,  Minoru Ikarashi

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包括硫属元素，氧和选自元素周期表第4,5,6族元素中的一种或多种过渡金属元素。

公开(公告)号：US09246090B2

公开(公告)日：2016-01-26

申请号：US13912996

申请日：2013-06-07

Applicant: Sony Corporation

Inventor： Hiroaki Sei ,  Kazuhiro Ohba ,  Takeyuki Sone ,  Minoru Ikarashi

IPC: H01L45/00 ,  H01L29/86 ,  H01L29/43 ,  H01L29/417 ,  H01L27/24

CPC classification number: H01L45/1266 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.

Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层含有一个可移动元件，体积电阻率约为150mΩ〜约1.2000mΩ（OHgr·cm）。

公开(公告)号：US20150325628A1

公开(公告)日：2015-11-12

申请号：US14650448

申请日：2013-11-21

Applicant: Sony Corporation

Inventor： Seiji Nonoguchi ,  Takeyuki Sone ,  Minoru Ikarashi ,  Hiroaki Narisawa ,  Katsuhisa Aratani

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/122 ,  G11C5/02 ,  G11C5/025 ,  G11C13/0002 ,  G11C2213/52 ,  G11C2213/71 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/00 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675 ,  H01L45/1683

Abstract: Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.

Abstract translation: 本发明提供一种存储装置，其具有多个具有包含多个层和电极的存储层的存储元件，所述多个层中的一层沿第一方向延伸，并且被所述多个存储元件与所述第一方向 电极沿与第一方向不同的第二方向延伸，并且被设置在第二方向上的多个存储元件共享。