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公开(公告)号：US09466791B2
公开(公告)日：2016-10-11
申请号：US13848996
申请日：2013-03-22
Applicant: Sony Corporation
Inventor： Hiroaki Sei , Kazuhiro Ohba , Takeyuki Sone , Minoru Ikarashi
CPC classification number: H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0011 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.
Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包括硫属元素，氧和选自元素周期表第4,5,6族元素中的一种或多种过渡金属元素。
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公开(公告)号：US09246090B2
公开(公告)日：2016-01-26
申请号：US13912996
申请日：2013-06-07
Applicant: Sony Corporation
Inventor： Hiroaki Sei , Kazuhiro Ohba , Takeyuki Sone , Minoru Ikarashi
IPC: H01L45/00 , H01L29/86 , H01L29/43 , H01L29/417 , H01L27/24
CPC classification number: H01L45/1266 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.
Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层含有一个可移动元件，体积电阻率约为150mΩ〜约1.2000mΩ（OHgr·cm）。
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公开(公告)号：US20150325628A1
公开(公告)日：2015-11-12
申请号：US14650448
申请日：2013-11-21
Applicant: Sony Corporation
Inventor： Seiji Nonoguchi , Takeyuki Sone , Minoru Ikarashi , Hiroaki Narisawa , Katsuhisa Aratani
CPC classification number: H01L45/122 , G11C5/02 , G11C5/025 , G11C13/0002 , G11C2213/52 , G11C2213/71 , H01L27/2427 , H01L27/2463 , H01L27/2481 , H01L27/249 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1226 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
Abstract: Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.
Abstract translation: 本发明提供一种存储装置，其具有多个具有包含多个层和电极的存储层的存储元件，所述多个层中的一层沿第一方向延伸，并且被所述多个存储元件与所述第一方向 电极沿与第一方向不同的第二方向延伸，并且被设置在第二方向上的多个存储元件共享。
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公开(公告)号：US09424918B2
公开(公告)日：2016-08-23
申请号：US13960519
申请日：2013-08-06
Applicant: Sony Corporation
Inventor： Takeyuki Sone
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0097 , G11C2013/0083 , G11C2213/79
Abstract: There is provided a storage unit including: a storage device configured to store a resistance state, the resistance state being changeable between a first state and a second state; and a driving section, when setting the resistance state to the first state, applying a first pulse having a first polarity to the storage device, the driving section, when setting the resistance state to the second state, applying a second pulse having a second polarity to the storage device, then temporarily applying a third pulse having the first polarity, and applying the second pulse again, the first polarity and the second polarity differing from each other.
Abstract translation: 提供了一种存储单元，包括：存储装置，其被配置为存储电阻状态，所述电阻状态可在第一状态和第二状态之间变化; 以及驱动部，当将所述电阻状态设定为所述第一状态时，向所述存储装置施加具有第一极性的第一脉冲，所述驱动部在将所述电阻状态设定为所述第二状态时，施加具有第二极性的第二脉冲 然后临时施加具有第一极性的第三脉冲，再次施加第二脉冲，第一极性和第二极性彼此不同。
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Patent Agency Ranking
公开(公告)号：US20140050011A1
公开(公告)日：2014-02-20
申请号：US13960519
申请日：2013-08-06
Applicant: Sony Corporation
Inventor： Takeyuki Sone
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0097 , G11C2013/0083 , G11C2213/79
Abstract: There is provided a storage unit including: a storage device configured to store a resistance state, the resistance state being changeable between a first state and a second state; and a driving section, when setting the resistance state to the first state, applying a first pulse having a first polarity to the storage device, the driving section, when setting the resistance state to the second state, applying a second pulse having a second polarity to the storage device, then temporarily applying a third pulse having the first polarity, and applying the second pulse again, the first polarity and the second polarity differing from each other.
Abstract translation: 提供了一种存储单元，包括：存储装置，其被配置为存储电阻状态，所述电阻状态可在第一状态和第二状态之间变化; 以及驱动部，当将所述电阻状态设定为所述第一状态时，向所述存储装置施加具有第一极性的第一脉冲，所述驱动部在将所述电阻状态设定为所述第二状态时，施加具有第二极性的第二脉冲 然后临时施加具有第一极性的第三脉冲，再次施加第二脉冲，第一极性和第二极性彼此不同。
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公开(公告)号：US20130256622A1
公开(公告)日：2013-10-03
申请号：US13848996
申请日：2013-03-22
Applicant: SONY CORPORATION
Inventor： Hiroaki Sei , Kazuhiro Ohba , Takeyuki Sone , Minoru Ikarashi
CPC classification number: H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0011 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.
Abstract translation: 存储装置包括：第一电极; 包括离子源层的存储层; 和第二电极。 第一电极，存储层和第二电极按此顺序设置。 离子源层包括硫属元素，氧和选自元素周期表第4,5,6族元素中的一种或多种过渡金属元素。
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公开(公告)号：US09203018B2
公开(公告)日：2015-12-01
申请号：US14196240
申请日：2014-03-04
Applicant: Sony Corporation
Inventor： Kazuhiro Ohba , Takeyuki Sone , Masayuki Shimuta , Shuichiro Yasuda
CPC classification number: H01L45/08 , G11C13/0069 , G11C16/0466 , G11C16/3418 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146
Abstract: A memory element with a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer.
Abstract translation: 具有第一电极，存储层和第二电极的存储元件。 存储层包括设置在第一电极侧的电阻变化层，设置在第二电极侧的离子源层，设置在电阻变化层和离子源层之间的中间层，以及设置在第一电极侧之间的至少一个 离子源层和中间层，或中间层和电阻变化层之间。
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公开(公告)号：US11004902B2
公开(公告)日：2021-05-11
申请号：US16306033
申请日：2017-04-24
Applicant: SONY CORPORATION
Inventor： Minoru Ikarashi , Seiji Nonoguchi , Takeyuki Sone , Hiroaki Sei , Kazuhiro Ohba , Jun Okuno
IPC: G11C13/00 , H01L27/24 , H01L45/00 , H01L27/105 , H01L49/00 , H01L21/8239
Abstract: Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.
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公开(公告)号：US20140183437A1
公开(公告)日：2014-07-03
申请号：US14196240
申请日：2014-03-04
Applicant: Sony Corporation
Inventor： Kazuhiro Ohba , Takeyuki Sone , Masayuki Shimuta , Shuichiro Yasuda
IPC: H01L45/00
CPC classification number: H01L45/08 , G11C13/0069 , G11C16/0466 , G11C16/3418 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146
Abstract: A memory element with a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer.
Abstract translation: 具有第一电极，存储层和第二电极的存储元件。 存储层包括设置在第一电极侧的电阻变化层，设置在第二电极侧的离子源层，设置在电阻变化层和离子源层之间的中间层，以及设置在第一电极侧之间的至少一个 离子源层和中间层，或中间层和电阻变化层之间。
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