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    SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC APPARATUS
    1.
    发明申请
    SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC APPARATUS 有权
    固态成像装置，制造固态成像装置的方法和电子装置

    公开(公告)号：US20140167124A1

    公开(公告)日：2014-06-19

    申请号：US14188052

    申请日：2014-02-24

    申请人： Sony Corporation

    发明人： Mikiko Kobayashi ,  Sanghoon Ha

    IPC分类号： H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/042 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/103 ,  H01L31/18 ,  H01L31/1804 ,  H04N5/361 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.

    摘要翻译： 固态成像装置包括形成在半导体衬底上的传输栅电极; 光电转换单元，包括从深度方向上的半导体衬底的表面侧形成的电荷存储区域，形成有第二导电类型杂质区域的转移辅助区域，所述第二导电型杂质区域以与部分重叠的方式形成 传输栅电极和作为第一暗电流抑制区的暗电流抑制区，形成在转印辅助体的上层中，并形成为具有位置对准，使得转印辅助区的端部 传输栅电极侧处于与转印辅助区域的端部相同的位置; 以及信号处理电路，被配置为处理从固态成像装置输出的输出信号。

    Solid-state imaging device, manufacturing method thereof, and camera with grouped on-chip lens formation
    6.
    发明授权
    Solid-state imaging device, manufacturing method thereof, and camera with grouped on-chip lens formation 有权
    固态成像装置及其制造方法以及具有分组片上透镜形成的相机

    公开(公告)号：US08704921B2

    公开(公告)日：2014-04-22

    申请号：US13886704

    申请日：2013-05-03

    申请人： Sony Corporation

    发明人： Hiroaki Ishiwata ,  Sanghoon Ha

    IPC分类号： H04N5/335 ,  H04N3/14 ,  H04N9/04 ,  H01L31/0232

    CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/045 ,  H04N2209/045

    摘要： A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered.

    摘要翻译： 固态成像装置包括：形成用于设置在半导体衬底的感光表面上的像素的光电二极管; 信号读取单元，形成在所述半导体基板上以读取信号电荷或电压; 形成在半导体衬底上并包括光波导的绝缘膜; 在绝缘膜上形成滤色片; 以及形成在滤色片上的片上透镜。 第一和第二像素组合在水平和垂直方向上交替地布置，第一像素组合具有在水平和垂直方向上布置两个绿色像素的布局，并且布置总共四个像素，第二像素 具有两个像素在水平和垂直方向上布置的布局的组合，总共排列了四个像素，并且两个红色像素和两个蓝色像素被布置。

    Method of manufacturing solid-state imaging apparatus
    7.
    发明授权
    Method of manufacturing solid-state imaging apparatus 有权
    制造固态成像装置的方法

    公开(公告)号：US09299867B2

    公开(公告)日：2016-03-29

    申请号：US14188052

    申请日：2014-02-24

    申请人： Sony Corporation

    发明人： Mikiko Kobayashi ,  Sanghoon Ha

    IPC分类号： H01L27/146 ,  H01L31/042 ,  H04N5/361 ,  H01L31/18 ,  H01L31/103

    CPC分类号： H01L31/042 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/103 ,  H01L31/18 ,  H01L31/1804 ,  H04N5/361 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.

    摘要翻译： 固态成像装置包括形成在半导体衬底上的传输栅电极; 光电转换单元，包括从深度方向上的半导体衬底的表面侧形成的电荷存储区域，形成有第二导电类型杂质区域的转移辅助区域，所述第二导电型杂质区域以与部分重叠的方式形成 传输栅电极和作为第一暗电流抑制区的暗电流抑制区，形成在转印辅助体的上层中，并形成为具有位置对准，使得转印辅助区的端部 传输栅电极侧处于与转印辅助区域的端部相同的位置; 以及信号处理电路，被配置为处理从固态成像装置输出的输出信号。

    Method for production of solid-state imaging element, solid-state imaging element, and imaging apparatus
    9.
    发明授权
    Method for production of solid-state imaging element, solid-state imaging element, and imaging apparatus 有权
    固体摄像元件，固体摄像元件及成像装置的制造方法

    公开(公告)号：US09219097B2

    公开(公告)日：2015-12-22

    申请号：US14144927

    申请日：2013-12-31

    申请人： Sony Corporation

    发明人： Sanghoon Ha ,  Hiroaki Ishiwata

    IPC分类号： H01L31/062 ,  H01L27/148 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/103

    CPC分类号： H01L27/14806 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

    摘要： A method for producing a solid-state imaging element which has photoconversion pixels, the method including forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.

    摘要翻译： 一种制造具有光转换像素的固态成像元件的方法，该方法包括通过离子注入在第一导电类型的杂质区上形成第一导电类型的杂质区和第二导电类型的第二杂质区， 使用相同的面膜; 在所述半导体衬底的表面上形成构成所述电荷转移部的传输门，所述电荷转移部在所述第二导电类型的所述第二杂质区上延伸; 通过离子注入形成构成传感器部分的第一导电类型的电荷累积区域; 以及通过离子注入形成具有比第二导电类型的第二杂质区更高的杂质浓度的第二导电类型的第一杂质区。