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    Solid-state imaging device and electronic apparatus
    1.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US10764523B2

    公开(公告)日：2020-09-01

    申请号：US16086312

    申请日：2017-03-17

    Applicant: SONY CORPORATION

    Inventor： Taiichiro Watanabe ,  Fumihiko Koga

    IPC: H04N5/369 ,  H04N5/374 ,  H01L27/146 ,  H04N5/359

    Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus that can reduce the influence on an OPB pixel in a case where blooming has occurred in an aperture pixel. A solid-state imaging device that is one aspect of the present disclosure has a first photoelectric conversion portion, an upper electrode, and a lower electrode formed outside a substrate, the first photoelectric conversion portion performing photoelectric conversion in accordance with incident light, the upper electrode and the lower electrode being formed to sandwich the first photoelectric conversion portion. The solid-state imaging device includes: an aperture pixel that is disposed on a pixel array, and generates a normal pixel signal; an OPB pixel that is disposed at an end portion on the pixel array, and generates a pixel signal indicating a dark current component; and a charge releasing portion that is disposed between the aperture pixel and the OPB pixel, and releases electric charge flowing out from the aperture pixel. The present disclosure can be applied to back-illuminated vertical spectroscopic CMOS image sensors.

    Solid-state imaging device and electronic apparatus
    4.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US10109669B2

    公开(公告)日：2018-10-23

    申请号：US15533904

    申请日：2015-12-11

    Applicant: SONY CORPORATION

    Inventor： Taiichiro Watanabe ,  Ryosuke Nakamura ,  Yusuke Sato ,  Fumihiko Koga

    IPC: H01L27/146 ,  H04N5/378

    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

    Solid-state imaging device and electronic apparatus
    6.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US11218656B2

    公开(公告)日：2022-01-04

    申请号：US16944732

    申请日：2020-07-31

    Applicant: SONY CORPORATION

    Inventor： Taiichiro Watanabe ,  Fumihiko Koga

    IPC: H04N5/369 ,  H04N5/374 ,  H01L27/146 ,  H04N5/359

    Abstract: A solid-state imaging device that is one aspect of the present disclosure has a first photoelectric conversion portion, an upper electrode, and a lower electrode formed outside a substrate, the first photoelectric conversion portion performing photoelectric conversion in accordance with incident light, the upper electrode and the lower electrode being formed to sandwich the first photoelectric conversion portion. The solid-state imaging device includes an aperture pixel that is disposed on a pixel array, and generates a normal pixel signal; an OPB pixel that is disposed at an end portion on the pixel array, and generates a pixel signal indicating a dark current component; and a charge releasing portion that is disposed between the aperture pixel and the OPB pixel, and releases electric charge flowing out from the aperture pixel.

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