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公开(公告)号：US11626356B2
公开(公告)日：2023-04-11
申请号：US17675902
申请日：2022-02-18
发明人： Nobutoshi Fujii , Yoshihisa Kagawa
IPC分类号： H01L23/498 , H01L23/522 , H01L27/146 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/532
摘要： A first semiconductor device includes a first substrate including a first electrode and a second electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and a second substrate including a photodiode, a transfer transistor, and a third electrode and a fourth electrode at a first surface side of the second substrate facing the first surface of the first substrate, and a plurality of transistors.
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公开(公告)号：US20210366958A1
公开(公告)日：2021-11-25
申请号：US17392733
申请日：2021-08-03
IPC分类号： H01L27/146 , H01L23/00 , H01L21/768 , H01L21/20
摘要： A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
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公开(公告)号：US11923279B2
公开(公告)日：2024-03-05
申请号：US18076861
申请日：2022-12-07
发明人： Nobutoshi Fujii , Yoshihisa Kagawa
IPC分类号： H01L23/498 , H01L23/00 , H01L23/522 , H01L23/532 , H01L25/00 , H01L25/065 , H01L27/146
CPC分类号： H01L23/498 , H01L23/49866 , H01L23/522 , H01L23/53238 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/09 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L24/80 , H01L2224/05547 , H01L2224/05571 , H01L2224/0603 , H01L2224/06131 , H01L2224/06133 , H01L2224/0616 , H01L2224/06517 , H01L2224/08123 , H01L2224/08147 , H01L2224/09517 , H01L2224/80194 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2225/06513 , H01L2225/06565 , H01L2924/00012 , H01L2924/00014 , H01L2924/01029 , H01L2924/12043 , H01L2924/13091 , H01L2224/05571 , H01L2924/00012 , H01L2924/00014 , H01L2224/05552 , H01L2924/13091 , H01L2924/00 , H01L2924/12043 , H01L2924/00
摘要： A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.
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公开(公告)号：US20230098931A1
公开(公告)日：2023-03-30
申请号：US18076861
申请日：2022-12-07
发明人： Nobutoshi Fujii , Yoshihisa Kagawa
IPC分类号： H01L23/498 , H01L23/522 , H01L27/146 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/532
摘要： A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.
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公开(公告)号：US20220246498A1
公开(公告)日：2022-08-04
申请号：US17675902
申请日：2022-02-18
发明人： Nobutoshi Fujii , Yoshihisa Kagawa
IPC分类号： H01L23/498 , H01L23/522 , H01L27/146 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/532
摘要： A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.
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