摘要:
A method and apparatus for measuring the three-dimensional surface shape of an object using color informations of light reflected by the object. The method and apparatus for measuring the three-dimensional surface shape of the object, in which a real-time measurement of the three-dimensional surface is performed by projecting a beam of light having color information onto the object and detecting color distribution information according to levels of the object, thereby obtaining level information of the object.
摘要:
An apparatus and method for measuring a three-dimensional shape of an object using a projection moiré device. The method comprises the steps of obtaining a grid pattern image projected on a reference plane of a moving table and applying a buckets algorithm thereto, thereby achieving a reference phase, obtaining a grid pattern image projected on the object set on the moving table and applying a buckets algorithm thereto, thereby achieving an object phase, calculating a difference phase between the object phase and the reference phase, thereby achieving a moiré phase, and unwrapping the moiré phase, thereby achieving a level information of the object. The apparatus and method measure the three-dimensional shape using a projection grid without a reference grid, thereby achieving compactness of equipment, simplicity in usage and manufacturing cost reduction.
摘要:
Provided are a method of transmitting and receiving image data with high speed, which includes sequentially transmitting image data output from an image sensor through one or more transmission channels with a speed corresponding to a bandwidth of the transmission channels, and sequentially recording image data received through one or more transmission channels in a frame store with a speed corresponding to a total bandwidth obtained by summing bandwidths of the respective one or more transmission channels, and an apparatus for implementing the method.
摘要:
Provided are a method of transmitting and receiving image data with high speed, which includes sequentially transmitting image data output from an image sensor through one or more transmission channels with a speed corresponding to a bandwidth of the transmission channels, and sequentially recording image data received through one or more transmission channels in a frame store with a speed corresponding to a total bandwidth obtained by summing bandwidths of the respective one or more transmission channels, and an apparatus for implementing the method.
摘要:
Disclosed is a method for inspecting a flat panel. The method for inspecting the flat panel includes the steps of: arranging a camera at a measurement location of the flat panel by horizontally moving at least one of the flat panel and the camera; automatically focusing the camera with respect to a measuring target of the flat panel at the measurement location; acquiring a plurality of images for the measuring target by vertically moving the focused camera within a set region on the basis of the present location of the camera when focusing the camera; selecting the image having the most definition for the measuring target among the acquired images; processing the selected image; and determining whether the measuring target is defective or not.
摘要:
An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.
摘要:
Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
摘要:
Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.
摘要:
Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
摘要:
Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.