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公开(公告)号：US20230051438A1
公开(公告)日：2023-02-16
申请号：US17971781
申请日：2022-10-24
发明人： Vamsy Chodavarapu , George Xereas
摘要： MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
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2.发明公开公开(公告)号：US20240253975A1
公开(公告)日：2024-08-01
申请号：US18608595
申请日：2024-03-18
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
CPC分类号： B81B3/0021 , B81B7/0087 , H03H9/02448 , B81B2201/0271 , H03H2009/2442
摘要： An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The resonator body is operable in an in-plane mode of vibration and an out-of-plane mode of vibration.
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公开(公告)号：US20230308076A1
公开(公告)日：2023-09-28
申请号：US18324902
申请日：2023-05-26
CPC分类号： H03H9/1057 , B81C1/00182 , H03H9/2426 , H03H3/0072 , H03H3/0073 , B81B7/007 , G01L9/12 , H03H9/0561 , G01L9/0042 , G01L9/0073 , B81C1/00269 , B81C1/00301 , H03H9/2405 , H03H9/2436 , H03H9/2431 , H03H9/2478 , H03H2009/2442 , B81B2203/0307 , H03H9/2452 , H03H9/2463 , H03H9/2473
摘要： A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.
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公开(公告)号：US12081192B2
公开(公告)日：2024-09-03
申请号：US18324902
申请日：2023-05-26
CPC分类号： H03H9/1057 , B81B7/007 , B81C1/00182 , B81C1/00269 , B81C1/00301 , G01L9/0042 , G01L9/0073 , G01L9/12 , H03H3/0072 , H03H3/0073 , H03H9/0561 , H03H9/2405 , H03H9/2426 , H03H9/2431 , H03H9/2436 , B81B2203/0307 , H03H2009/2442 , H03H9/2452 , H03H9/2463 , H03H9/2473 , H03H9/2478
摘要： A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.
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公开(公告)号：US11479460B2
公开(公告)日：2022-10-25
申请号：US16369757
申请日：2019-03-29
发明人： Vamsy Chodavarapu , George Xereas
摘要： MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
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6.发明授权公开(公告)号：US11932530B2
公开(公告)日：2024-03-19
申请号：US18165118
申请日：2023-02-06
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
CPC分类号： B81B3/0021 , B81B7/0087 , H03H9/02448 , B81B2201/0271 , H03H2009/2442
摘要： An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.
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7.发明授权公开(公告)号：US11305981B2
公开(公告)日：2022-04-19
申请号：US17256525
申请日：2019-06-28
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
摘要： There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.
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8.发明申请公开(公告)号：US20210276858A1
公开(公告)日：2021-09-09
申请号：US17256525
申请日：2019-06-28
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
摘要： There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.
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公开(公告)号：US12071342B2
公开(公告)日：2024-08-27
申请号：US17971781
申请日：2022-10-24
发明人： Vamsy Chodavarapu , George Xereas
CPC分类号： B81C1/00182 , B81B7/007 , B81C1/00269 , B81C1/00301 , G01L9/0042 , G01L9/0073 , G01L9/12 , H03H3/0072 , H03H3/0073 , H03H9/0561 , H03H9/1057 , H03H9/2405 , H03H9/2426 , H03H9/2431 , H03H9/2436 , B81B2203/0307 , H03H2009/2442 , H03H9/2452 , H03H9/2463 , H03H9/2473 , H03H9/2478
摘要： MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
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10.发明公开公开(公告)号：US20230183057A1
公开(公告)日：2023-06-15
申请号：US18165118
申请日：2023-02-06
发明人： George Xereas , Vahid Tayari , Ahmed Khorshid , Charles Allan
CPC分类号： B81B3/0021 , B81B7/0087 , H03H9/02448 , B81B2201/0271 , H03H2009/2442
摘要： An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.
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