摘要:
A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (λ1) and a second wavelength (λ2), wherein a first ratio is defined as an intensity of light λ2 to an intensity of light λ1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least λ1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of λ2 to an intensity of light of λ1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.
摘要:
A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (λ1) and a second wavelength (λ2), wherein a first ratio is defined as an intensity of light λ2 to an intensity of light λ1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least λ1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of λ2 to an intensity of light of λ1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.
摘要:
A measuring apparatus for optical, for example interferometric, measurement of an optical imaging system, imaging of a useful pattern in an imaging operation, including a device for production of radiation information, for example interference information, which is indicative of imaging errors, having a mask structure arrangement which contains a measurement pattern, and a device for detection and evaluation of the interference information which is indicative of imaging errors; also a method for operation of the optical imaging system including imaging error correction. The apparatus further includes a heating irradiation arrangement for radiation heating of the optical imaging system during measurement operation such that the heating effect of the radiation which is applied to the optical imaging system to be measured equals, within a tolerance range which can be predetermined, the heating effect of the radiation which is passed through the useful pattern during imaging operation of the optical imaging system.
摘要:
A measuring apparatus for optical, for example interferometric, measurement of an optical imaging system, imaging of a useful pattern in an imaging operation, including a device for production of radiation information, for example interference information, which is indicative of imaging errors, having a mask structure arrangement which contains a measurement pattern, and a device for detection and evaluation of the interference information which is indicative of imaging errors; also a method for operation of the optical imaging system including imaging error correction. The apparatus further includes a heating irradiation arrangement for radiation heating of the optical imaging system during measurement operation such that the heating effect of the radiation which is applied to the optical imaging system to be measured equals, within a tolerance range which can be predetermined, the heating effect of the radiation which is passed through the useful pattern during imaging operation of the optical imaging system.
摘要:
Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns. Additionally or alternatively, a pupil position offset caused by a lateral relative movement of the mask structure and detector element can be taken into account by back calculating the interferogram, respectively recorded by the detector element, using an associated phase-shift characteristic, or by a computational correction of wavefront derivatives, obtained from the recorded interferograms, in the direction of lateral movement. The method and/or the device can by used, for example, for determining aberration in the case of high-resolution projection objectives of microlithography exposure machines using shearing or point interferometry.
摘要:
Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns. Additionally or alternatively, a pupil position offset caused by a lateral relative movement of the mask structure and detector element can be taken into account by back calculating the interferogram, respectively recorded by the detector element, using an associated phase-shift characteristic, or by a computational correction of wavefront derivatives, obtained from the recorded interferograms, in the direction of lateral movement. The method and/or the device can by used, for example, for determining aberration in the case of high-resolution projection objectives of microlithography exposure machines using shearing or point interferometry.
摘要:
A method and an apparatus for determining the influencing of the state of polarization of optical radiation by an optical system under test, wherein radiation with a defined entrance state of polarization is directed onto the optical system, the exit-side state of polarization is measured, and the influencing of the state of polarization is determined by the optical system with the aid of evaluation of the exit state of polarization with reference to the entrance state of polarization. An analyser arrangement which can be used for this purpose is also disclosed. The method and the apparatus are used, e.g., to determine the influencing of the state of polarization of optical radiation by an optical imaging system of prescribable aperture, the determination being performed in a pupil-resolved fashion.
摘要:
A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要:
A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要:
A device and a method for wavefront measurement of an optical system (7), in particular by an interferometric measurement technique. A dynamic range correction element (12, 12a) is arranged in the beam path upstream of the detector arrangement (11) and is designed such that the variation in the spatially dependent characteristic of a phase of the wavefront forming the interference pattern is kept below a prescribed limit value throughout a detection area. In addition or as an alternative, a set of several diffraction structures of different period length can be used with a shearing interferometry technique and/or a set of several pairs of a reference pinhole and a signal passage opening with different hole spacings can be used with a point diffraction interferometry technique for different sub-areas of the detection area. A remaining distortion error can be taken into account by determining a corresponding distortion transformation and applying the inverse distortion transformation.